透析結晶 的英文怎麼說

中文拼音 [tòuxījiējīng]
透析結晶 英文
percrystallization
  • 透 : Ⅰ動詞1 （滲透; 穿透） penetrate; pass [seep] through 2 （暗地裡告訴） tell secretly; let out; lea...
  • 析 : Ⅰ動詞1. （分開; 散開） divide; separate 2. （分析） analyse; dissect; resolve Ⅱ名詞（姓氏） a surname
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 透析 : dialyse
  • 結晶 : 1 （析出晶體） crystallize2 （晶體） crystal 3 （成果） crystallization; fruit; product; quintess...
  1. The results indicate that ( a ) before heat treatment, with the increasing of substrate temperatures, content of lower valency ( tij + ) decreases, the stoichiometric proportion of o / ti in all samples is about 2 ; the films have amorphous incompact columnar fiber structure, and with the increasing of substrate temperature, the size of columnar fiber increases ; the films have good hyalescence in visible range and great absorbability at the wavelength of 350nm ; optical constants of the films are calculated from the transmittance spectrums in visible range by mathematical analysis of the orders of interference, the results show that the refractive ind

    研究結果表明， （ a ）熱處理前，隨著基片溫度的增加，薄膜中的低價氧化鈦含量逐漸減少，化學計量比趨于o ti = 2 ；薄膜具有非晶態不緻密的柱狀纖維結構，柱狀纖維的尺寸隨基片溫度的升高而增加;薄膜在可見光范圍內透明，在波長為35onzn時嚴重吸收，利用干涉級次法分析了薄膜的光學常數，結果表明，薄膜的折射率隨基片溫度的升高而增加，根據計算結果得到了tioz薄膜在不同基片溫度下的折射率色散曲線。
  2. In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators. firstly, we presented reseached and development of solar cells in china and foreign countries ; secondly, on the basis of fundamental priciples and theories, we discussed some factors of influcing conversion efficiency of solar cells, and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed, the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied, and some questions on epitaxy growth ( such as crystal qualities, interface stress, element interdiffusion, n - and p - type doping et all ) were solved ; after that, the cell fabrication process was described ; finally, we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma, designed and fixed new solar concentrators

    本文致力於用自製的低壓mocvd裝置進行cainp _ 2 / gaas / ge空間用高效級聯太陽能電池製作的工藝以及聚光太陽能電池組件的研究。首先，介紹了國內外太陽能電池的研究現狀及應用情況；其次，運用太陽能電池基本原理討論影響電池轉換效率的因素，分析了級聯電池的伏安特性；隨后，討論了cainp _ 2 / gaas / ge雙結級聯電池的結構設計理念，研究了採用低壓mocvd技術生長cainp _ 2 / gaas / ge級聯太陽電池材料的工藝過程，解決了異質材料生長的結晶質量、界面應力、材料互擴散以及材料n 、 p型摻雜等一系列問題；然後總結了級聯電池的后工藝製作；最後，研究了以pmma為材料的菲涅耳線聚焦透鏡的熱壓成型工藝及其模具的加工工藝，設計並安裝完成新型聚光太陽能電池組件。
  3. The techniques of preparing film buffer layers on si were studied. the sem, tem and xrd were adopted to study the crystal structure of films. the influences of buffer layers, substrate and heat treatment condition on the crystal structure and performance of the ybco films were discussed

    進一步用掃描電鏡、透射電鏡和x射線衍射儀研究了薄膜組織結構和結晶情況，分析了緩沖層和襯底對ybco薄膜制備的影響、以及不同熱處理條件對薄膜結晶結構及性能的影響。
  4. Further more, silicon is advantageous as the material of industrial temperature sensors, since its fabrication and processing techniques are well known. a novel method that get a 10um - 20um layer of single - crystal silicon as the temperature sensitive material and design transmitted configuration is presented

    論文在理論分析單晶硅透射特性的基礎上，提出了以微細加工各向異性腐蝕深槽的工藝方法，獲得10um 20um的單晶硅感溫薄膜，並採用透射式傳感結構。
  5. The analyses given in this paper to quasi - three - level for 946 nm laser are complete. the relation between 946 nm laser transmission and optimal crystal length has been derived from the rate equations describing the population inversion and the photon density in the laser cavity in the steady - state case. the minimal claims to coating have been given on the base of contrasting 946 nm transmission with 1064 nm transmission in the condition of different cavity losses and how the pump beam radius in the laser crystal and optimal crystal length affect the laser threshold and output power of 946 nm laser has been given as well

    對產生946nm譜線的準三能級結構給出了較為完整的分析，利用激光諧振腔處于穩態時的速率方程，導出了準三能級nd ： yag946nm起振時，透射損耗與最佳激光晶體長度的關系，在與1064nm透射損耗相比較的基礎上，給出了不同的腔損耗情況下的最低鍍膜要求，並且給出了激光閾值、輸出功率和最佳激光晶體長度及泵光光斑大小的關系，這為設計室溫下高效運轉的946nm激光器的提供了理論基礎，這種分析方法對研究此類低增益，準三能級或三能級激光系統輸出特性有借鑒意義。
  6. Then, based on the latest high - resolution, three - dimension crystal structure of kcsa potassium channel, a three - state hopping model is established to study permeation of an open - state potassium channel. breaking through other theories, we innovatively choose the master equation to characterize the dynamics of the system and educe the results according with experiments and the study of the others

    其次基於最新的kcsa鉀離子通道高解析度的三維晶體結構，建立了一個三態跳躍模型來研究kcsa鉀離子通道的通透性，並且首次應用主方程方法描述它的動力學特徵，取得了與實驗和他人的研究相吻合的結果。
  7. Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively

    利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究，結果顯示，所制備的薄膜為六方纖鋅礦型結構，具有高c軸擇優取向性；表面均勻、緻密，薄膜材料由許多星狀晶粒組成，晶粒尺寸大約為10 - 30nm左右；薄膜可見光透過率平均可達90 % ；對薄膜厚度以及電學性能進行了測定后發現：單次鍍膜厚度約為75 - 240nm ， al ~ （ 3 + ）離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內；分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。
  8. The alloy structure has been shown by x - ray powder diffraction. x - ray photoelectron spectroscopic data have confirmed that the nickel and cobalt in the bimetallic nanoclusters is in the zero - valence state and alloy state, respectively

    利用差熱分析、紅外光譜、 x射線粉末衍射和透射電子顯微鏡對反應的氧化過程、結晶過程和產物的結構與形貌進行了表徵。
  9. The transmission spectra and reflectance spectra of the pc shift systematically with the spheres size, providing evidence of photonic crystal effects. photoluminescence measurements show efficient emission of the zno photonic crystals in the uv as well as a defect emission band at longer wavelength

    利用透射光譜及反射光譜研究了影響zno光子晶體的光子禁帶的工藝參數;利用x射線衍射儀分析了zno光子晶體的結晶和取向性能;利用熒光分光光度計，研究了不同前處理溫度下的zno光子晶體的光致發光譜。
  10. On the basis of analyzing characteristics of the cement - based capillary crystalline waterproof materials, the article points out that both waterproofing and leak - stopping ability of this kind of materials should be simultaneously functioned in order to enhance quality of coating layer, ensure its thickness and effectiveness

    在分析水泥基滲透結晶型防水材料應用特點的基礎上，指出在此類材料的應用中，應重視同時發揮其防水和堵漏的功能，提高防水塗層質量，保證塗層厚度，以確保應用效果。
  11. According to the significant improvement in properties of ions and particles doped perovskite, tb and cnt doped pt materials were prepared, and the properties studied. tb and cnt doped pt powders and films were successfully prepared by sol - gel method. by differential thermal analysis ( dta ), scanning electron microscopy ( sem ), transmission electron microscopy ( tem ), x - ray diffraction ( xrd ), fluorescent analysis and dielectric constant analysis, the morphology and phase transformation, crystalline properties, fluorescent properties and dielectric properties of the materials were studied

    本研究中採用溶膠凝膠法制備了具有優良結晶性能的稀土離子tb及納米碳管摻雜的鈦酸鉛（ pt ）超細粉末和（ 100 ）取向生長的薄膜，並利用差熱分析、掃描電子顯微鏡、透射電子顯微鏡、 x射線衍射、熒光分析和介電常數等多種分析測試手段對摻雜后的pt薄膜及超細粉末的相結構、光學性能、結晶性能以及介電常數等進行了研究。
  12. An optimized cvi - pip process has been achieved, by which the c / sic composites with 2. 1 ig / cm3 high density and uniformity are fabricated in 200 hours. the microstructure and composition of pyrolytic carbon interphase and cvi - pip silicon carbide matrix in the c / sic composites are investigated with the help of polarization microscope, scanning electron microscope, and x - ray diffraction technique, etc. the structure characteristic of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and effects of cvi - pip process on it are summarized and discussed. by growth course and feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix analyzed, a whole - course densification mechanism of lamellar - growth - pattern is proposed to explain the densification phenomenon, which makes a systematic understanding on the feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and the multiple stitching interface binding

    根據熱解碳中間相、 cvi - pip系sic基體相的組織構成與外貌特徵，通過對熱解碳中間相、 cvi - pip系sic基體相的生長過程和生長特徵進行分析，提出了基於層生長模式的緻密化過程理論，解釋了熱解碳中間相、 cvi - pip系sic基體相以及釘扎誘導結構多重界面的形成： （ 1 ）在1150下， cvi - sic亞基體相遵從「過飽和?凝聚?融合」機理沉積，以8f型? sic為主，同時還會有少量4h型? sic ，無游離si和游離c存在； （ 2 ） pip - sic亞基體相由非晶態sic以及彌散分佈的- sic微晶、 si - o - c和游離c組成； （ 3 ）熱解碳中間相與碳纖維增強相之間、 cvi - sic亞基體相之間形成滲透釘扎結構過渡界面， pip - sic亞基體相與摘要cvi一sic亞基體相之間形成誘導結構過渡界面。
  13. By analyzing the difference on ( loo ) and ( 110 ) face in the structure of dkdp crystal, the different of uv - vis transmission spectra and the different of concentrations of metal impurities in different part of dkdp crystal was explained

    通過分析dkdp晶體的原子結構以及柱面和錐面的原子結構差別，解釋了晶體柱面和錐面雜質金屬離子含量差別的原因以及其與紫外可見透過光譜的關系。
  14. The samples were characterized by x - ray diffraction ( xrd ), optical spectroscopy, transmission electron microscopy ( tem ) and scanning tunneling microscopy ( stm ). as a result, a self - assembled monolayer ( sam ) of msa on the surface of fee au particles was directly observed in atomic level

    在此基礎上，對金納米粒子和其自組織結晶體進行了一系列的x射線衍射儀（ xrd ） 、透射式電子顯微鏡（ tem ） 、光吸收譜和掃描隧道顯微鏡（ stm ）的檢測和分析。
  15. In this article, molybdenum wire multi - doped with la2o3 and k, al, si, molybdenum wire doped with k, al, si and molybdenum wire doped with la2o3 or y2o3 are analyzed by dsc, hot - draw, sem, optical microscope, micro - hardness, x - ray and tem. it is found that multi - doped molybdenum wire is better at elevating the recrystallization temperature and improving the micro - structure and mechanic properties after recrystallization than molybdenum wire doped with k, al, si

    本文通過差熱分析、熱模擬、掃描電鏡、金相顯微鏡、顯微硬度、 x射線衍射和透射電鏡等實驗手段對復合摻雜k 、 al 、 si和稀土氧化物的鉬絲、單摻雜k 、 al 、 si的鉬絲以及單摻雜稀土氧化物的鉬絲的再結晶溫度、高溫下的綜合力學性能和組織形貌進行了綜合對比分析。
  16. In this thesis, we used the q - switched nd : yag laser pulse focused by lens to pump the cr ~ ( 4 + ) : mg _ 2sio _ 4 crystal, with the pump laser pulse duration and energy of 30ns and 50 mj separately, and got the laser pulse with center wavelength, pulse duration and energy of 1. 22 m, 8. 2 ns and 10 mj on the best work condition. on the base of zhangguowei s approximation about gain - switching and the parameter of cr ~ ( 4 + ) : mg _ 2sio _ 4 crystal, we calculated the time characteristics of cr ~ ( 4 + ) : mg _ 2sio _ 4 laser pulse with rate equation by numerical method, obtained the conclusion that the laser pulse duration is only related to the pump energy and cavity length : the larger the pump energy is, the narrower the pulse duration is ; the longer the cavity is, the wider the

    本論文採用調qnd : yag脈沖激光通過透鏡聚焦后縱向抽運cr ~ （ 4 + ） : mg _ 2sio _ 4晶體，抽運光脈沖寬度為30ns 、能量為50mj ，在較佳工作條件下得到了中心波長為1 . 22 m 、脈寬為8 . 2ns 、能量為10mj的激光脈沖;並在張國威分析增益開關時間特性的近似法基礎上，結合實際的cr ~ （ 4 + ） : mg _ 2sio _ 4激光器的相關參數，從速率方程出發，用數值計算的方法更為精確的模擬了cr ~ （ 4 + ） : mg _ 2sio _ 4激光器輸出激光脈沖的時間特性，得出了激光脈寬只與抽運能量、腔長有關的結論，即抽運能量愈大，脈寬越窄;腔長越長，脈寬則愈寬。
  17. In the third chapter, the thermal lens effect of laser crystal is studied. the model of thermal lens theory and some measuring methods are explored. these methods are generalized and classified and the advantages and disadvantages of which are pointed out

    第三章分析了激光晶體的熱透鏡效應，研究了熱透鏡理論模型和各種測量方法，對這些方法總結、歸類並指出了各自的優缺點。
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