遷移率 的英文怎麼說
中文拼音 [qiānyílǜ]
遷移率
英文
drift mobility-
The mobility value used is that of the minority carrier.
所採用的遷移率值都是少子遷移率。The results showed that inclpc nanoparticles were ball - shaped with a size of 25 - 50 run, that their diffraction peaks become broader, and that the blue - shift in uv / vis absorption was also observed. the photoconductivity of inclpc nanoparticles in single - layered p
本章的研究旨在對有機電子傳輸材料進行初步的探索，為今後新型的高遷移率有機電子傳輸材料的合成和表徵，以及應用等方面積累經驗。And production fashion is selected optional for assurance of the material character of hpch. the hpch material, in which the compound technique route of polybasic components is applied, has better properties such as high workability, high durability, low ion transference rate and so on
採用多組份復合技術路線配製出高工作性、高耐久性、低離子遷移率的hpch材料，對其宏觀物理力學性能、耐久性能和微觀結構進行了分析研究。Using a strained si layer as a channel in cmosfet may increase the mobility of carriers and thus enhance the device ’ s performance considerably such as transconductance and cutoff frequency
在sige虛擬襯底上生長應變si層做器件溝道，將大大增加載流子的遷移率，從而提高器件的跨導和其他性能。2. the data from zymogram ( est bands and their rf ) are transferred into bimorphic characteristic data. a data matrix is established based on the data and calculated by phylogenetic analysis software package winclada 1. 00. 04, and then phylogenetic trees of intraspecies and interspecies are mapped
2 、將所獲得的盲蝽科4亞科11屬23種盲蝽雄雌個體的酶譜數據（酶帶和相對遷移率rf ）轉化為二態特徵數據建立矩陣，應用系統發育分析軟體包winclada1 . 00 . 04對數據矩陣進行分析運算，並分別獲得各個亞科內和亞科間的系統發育樹。There were some degration in the purified protein, but gst - ap - 2 a still had the dna binding activity in the gel shift assay. the gst - testin and gst - antn1 were used for immunolize rabbits
雖然所提取的融合蛋白gst - ap - 2出現較多降解，但是電泳遷移率變動分析顯示其仍然具有良好的dna結合活性。Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance
討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility, larger transconductance, stronger drive capability and hence faster circuit speed
與體si器件相比，採用sige材料的異質結器件已經在許多方面顯示出了強大的優勢:譬如更大的載流子遷移率，更大的跨導，更強的電流驅動能力以及更快的電路速度等等。Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices
Strained - soimosfet是最近幾年才出現的新型器件，它將soi材料和sige材料結合在一起，與傳統體硅器件相比，表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢，特別適用於高性能、高速度、低功耗超大規模集成電路。A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed
提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。For strained si pmosfets, the hole mobility is not only determined by the tensity of strain, but also related to the strain types, which are uniaxial compressive strain and biaxial tensile strain. when electric field is high enough, the hole mobility will be deteriorated in pmosfets under biaxial tensile strain, however, in the case of uniaxial compressive strain, the deterioration will never occur
經模型分析發現，應變硅pmosfet空穴遷移率與應力作用方式有如下關系:當橫向電場較高（ > 5 105v / cm ）時，雙軸張應力作用下的應變硅pmosfet的空穴遷移率將發生退化，而單軸壓應力器件則不會受到影響。Such a model will ensure the existence of this species in this area. 4. the comparison of the biochemical contents between subitaneous and diapause eggs the dry weight and the contents of each biochemical components in a diapause egg were all more than the ones in a subitaneous egg ; the comparatively content of lipid in t
Sns一獄ge圖譜中滯育卵有10條蛋白質條帶與正常卵的遷移率不同，主要分佈在分子量為71 . 52一102 . 16kd范圍內;產滯育卵的雌體比產正常卵的雌體多了一條分子量為74 . 26kd的蛋白質條帶。With the advance of semiconductor manufacturing, circuits with increasingly higher speed are being integrated at an increasingly higher density, which makes analysis and verification of power grid integrity more important. power grid integrity includes four issues, namely, ir drop analysis, ground bounce analysis, ldi / dt from the pin inductance and em analysis
隨著超大規模集成電路集成度和工作頻率的不斷提高，電源網格完整性分析變得越來越重要，一般有四個關鍵問題： ir電壓降分析、接地點電勢上升（ groundbounce ）分析、來自引腳電感的ldi / dt分析和電子遷移率em分析。Comparing to a - si tft, p - si tft has the merits such as high field effect mobility, high integration and high speed, high definition display, n channel and p channel capability, low power consumption and self - aligned structures. with these good characteristics, p - si tft lcd could provide brighter and stable image
相對于a - sitft ， poly - sitft有其明顯的優勢:高遷移率、高速高集成化、 p型和n型導電模式、自對準結構以及耗電省、解析度高等優點，能夠提供更亮、更精細的畫面。It was found that, the as grown crystal of mnxcd1 - xin2te4 is p type semiconductor, both the charge density and the resistivity increase with x value, while the carrier mobility decreases with x
晶體的電學性能，發現生長態的mncd晶體均為p型半導體。隨著組分x值的增大，載流於的濃度np減小，遷移率p 。In this article, we microinjected camp ( as activator of pka ) and protein kinase inhibitor ( pki ) ( as inhibitor of pka ) into mouse 1 - cell stage fertilized eggs, the camp concentration, pka and mpf activaty were detected, also the cdc25c, cdc2 phosphorylated state and the concentration of ptyr15 for cdc2, cyclin b1. materials females of 4 - 5 week - old kuming mice and males of 8 week - old kuming mice were supplied from the department of laboratory animals, china medical university
本實驗應用pka激動劑camp及抑制劑pki顯微注射入小鼠二一細胞期受精卵並觀察卵細胞m期形態學變化及pka對mpf活性的影響以及cdc25c ， cdcz電泳遷移率， cdcz的磷酸酪氨酸ptyrl及周期素b含量，為揭示pka在哺乳動物細胞周期調控機制，對生長、發育、癌變、死亡的研究提供理論依據。The filled skutterudite compounds attract aboard attention owing to their high mobilities and relatively large seebeck coefficients in the middle temperature range of 600 - 800k. but their thermal conductivities are very high, so the problem how to decrease their lattice thermal conductivities and improve their zt values becomes a research hotspot
填充式skutterudite化合物由於在中溫領域（ 600 800k ）具有很高的載流子遷移率和較大的seebeck系數而引起人們的廣泛關注；但其熱導率k較高，因而如何降低晶格熱導率kl ，提高其熱電性能指數zt值已成為研究的熱點。The enhanced photoconductive effect from small amount of tnf facilitates the preparations of new organic photoconductive devices under the drive of low fields. in the fourth chapter, inclpc nanoparticles embedded in poly ( n - vinylcarbzaole ) ( pvk ) were prepared successfully by dissolving inclpc in aprotic organic solvent / lewis acid with great concentration for the formation of electron donor - acceptor complexes, i. e., the method of complexation - mediated solubilization. the fabricated inclpc nanoparticles were characterized by means of uv / vis absorption, x - ray diffraction pattern, and tem
論文的最後一章中，我們合成了具有較好的電子傳輸性能的化合物』一二苯基四竣酸花酚亞胺（ ddp ） ；研究了其溶解性、熱穩定性、晶體結構、紅外光譜、紫外吸收光譜和蒸鍍薄膜的屬性，並用量子化學計算方法模擬其單分子的空間構型；載流子遷移率測試的結果約為ix10 「 、 m 』 v 」 』 ? s 「 』 。We represent a temperature model of surface carrier mobility of short channel most after thinking about kinds of dispersion effect
在考慮了各種散射效應對遷移率的影響后，提出了短溝道most表面載流子遷移率的溫度模型。Extrinsic semiconductor single crystals - measurement of hall mobility and hall coefficient
非本徵半導體單晶霍爾遷移率和霍爾系數測量方法分享友人