重退火 的英文怎麼說

中文拼音 [zhòngtuìhuǒ]
重退火 英文
reannealing
  • 重 : 重Ⅰ名詞（重量; 分量） weight Ⅱ動詞（重視） lay [place put] stress on; place value upon; attach im...
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 退火 : [冶金學] anneal; annealing; back-out
  1. The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed

    本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。
  2. In this study we focused on the pinning structure, and prepared [ pt / mn ] n multilayer by dc magnetron sputtering system instead of using co - sputtering, by which we wish to find a way to reduce the critical annealing temperature and shorten the annealing time

    在我們的課題研究中，我們著重對釘扎層進行了研究，工藝上採用了pt / mn多層膜而不是傳統的共濺射的方法。我們希望通過這種方式能夠發現一條降低臨界退火溫度的途徑，並且能夠縮短退火時間。
  3. To better elucidate the following critical problems - - building the rational mathematics model and searching the effective algorithms, this paper sets forth the basis of algorithms and heuristic algorithm. meanwhile it compendiously introduces the main principles of genetic algorithm and the stimulated annealing algorithm, principal parameters during the course of solving problems and vertex coloring theory

    為了更好地說明下文所要解決的關鍵問題? ?建立合理的數學模型和尋找有效可行的演算法，本文闡述了演算法和啟發式演算法的理論基礎，並扼要地介紹了遺傳演算法、模擬退火演算法的主要思想和在解題過程中應用的重要參數，以及圖的著色理論；及其在作業計劃編制中應用的可能性。
  4. Again, because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films, among the experiment, we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500, and then slowly cooled until the room temperature. via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements. finally, the films were characterized by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), ultraviolet visible ( uv ) and the hall effect measurement

    再次，由於離子注入會對薄膜表面的結構造成損傷，本實驗把被注入離子的cdte薄膜在n2氣氛中500下退火1個小時，然後緩慢冷卻至室溫。經測試分析，熱處理對晶格表面缺陷的恢復有很重要的作用。最後，利用xrd 、 sem 、紫外可見分光光度計及hall測試系統研究其結構，表面形貌和光電性能。
  5. The zn / o ratio, c - axis orented and stress were improved by annealing, and also redusing the defect of zno flim, increasing the size of grain. but too high annealing temperature was adverse to recrystallization of zno thin film

    退火能改善zno薄膜的鋅氧比、 c軸的擇優取向和應力狀態，減少薄膜中的缺陷，使晶粒長大，但是過高的退火溫度不利於zno薄膜的重結晶，使zno薄膜的質量變差。
  6. Then, the effect of heavily doped boron on ig of czochralski silicon was also investigated. it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature, ramping annealing respectively. for conventional high - low - high three - step ig annealing, the dz becomes narrower and bmd density is higher in hb samples than that in lb samples, as a result of hb enhancing oxygen precipitation

    結果顯示，單步高溫熱處理時重摻硼樣品不能形成潔凈區；降溫退火中，降溫速度較為緩慢（ 3 / min ）時能生成一定量的氧沉澱，但沒有潔凈區形成；普通高?低?高三步熱處理過程中，形成明顯的潔凈區，但相對輕摻樣品而言，潔凈區較窄，氧沉澱密度明顯偏高，說明重摻硼樣品吸雜能力強。
  7. Shenyang alloy material co., ltd. ’ s transferring item is one of the important transforming items for us, which has approved by national financial department by means of using japan ' s loan, the importance of item includes the advanced half continual vacuum melting furnace 、 simultaneous x - ray spectrometer system 、 fluorescent analyzed instruments ; advanced annealed furnace 、 vacuum annealed furnace and other heat treated furnish etc ， and others totally 50 types

    沈陽合金材料有限公司的搬遷改造項目是國家發改委和財政部批準的國家利用日元貸款改造重點項目之一，項目重點改造內容有引進國外最先進的半連續真空感應熔煉爐、 x熒光分析儀、直讀光譜儀；國內先進的罩式退火爐、真空退火爐等熱處理設備及一些冷加工設備，共增添新設備五十多臺套。
  8. With the development of the growth skill craft of gaas single crystal, the density of el2 can be controlled in 1 - 5 1016 / cm ~ 3 and its distribution becomes more uniform in gaas wafer too, so the distribution of carbon seems to be more important to determine the uniformity of electrical resistivity of si - gaas material. so it seems to be very important to study the distribution of carbon and the effect of dislocation on the distribution of carbon

    隨著單晶生長技術的發展，通過退火，由於si - gaas中理論化學配比偏離， el2濃度可被控制在1 1 . 5 10 ~ （ 16 ） cm ~ （ - 3 ） ，且分佈均勻。因此碳的分佈就成為決定si - gaas材料電阻率均勻性的一個關鍵因素。所以，研究碳微區均勻性就顯得非常重要。
  9. Sims depth profile analysis on the as - implanted wafers showed that there are two hydrogen enrichment peaks around both sides of the projected range ( rp ) of oxygen, which correspond to the two interfaces of the box layer of the annealed samples

    Sims結果表明水離子原注入樣品中的氫分佈出現了明顯的雙峰分佈狀態，這兩個峰的峰位分別位於注入氧分佈濃度峰值rp的兩側，並且與退火樣品的氧矩形分佈的兩邊位置基本重合。
  10. The experimental results showed that high density of oxygen precipitation and induced - defects were formed after annealing of wafers at moderate and high temperatures

    重摻砷硅單晶在中高溫退火時形成密度較高的氧沉澱及誘生缺陷。
  11. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  12. In the experiments, we also found the - sources flow rate, temperate of the substrates, annealing time and annealing temperature have an important infuence to epitaxial quality of the films

    在實驗過程中，我們也發現-族源氣體的流量比、襯底溫度、退火時間和退火溫度對外延晶體的生長質量也有重要的影響。
  13. At the s ame time, an exceptional structure has been found in the sample annealed for one hour at 800. it appears the single crystal lattice irradiated by high - energy electron beam within a few seconds and then becomes amorphous structure quickly

    同時在800退火1小時的薄膜中發現一種異常結構，在短時間高能電子束照射下呈現明晰的單晶衍射斑點，但時間一長，非晶化現象嚴重。
  14. The samples that annealed at different temperatures and different cooling ways ( fast or slow ), separately, was compared. the experimental results showed that the temperature and the cooling - way of the gettering process were very important for the gettering efficiency

    之後二極體分別進行退火溫度700 6hr 、 800 6hr 、 900 6hr和退火后快、慢降溫方式下j _ r值的比較，結果表明吸除熱處理摘要abstraer溫度對于吸雜效果至關重要。
  15. The experimental results show that the produced radiation damage and its thermal annealing behavior are the same for both irradiations in a - al2o3, and that the heavy ion irradiation can well simulate the neutron and / or proton irradiation

    實驗表明，兩種情況下輻照后的- al _ 2o _ 3材料中產生的輻照損傷及其退火效應一致，說明採用重離子輻照可以很好地模擬中子或質子輻照。
  16. In order to verify the reliability and validity of the heavy ion irradiation simulation of neutron and proton irradiations, radiation damage and its thermal annealing behavior in a - al2o3 irradiated at the equivalent dose by 85 mev 19f ions and by en > 1 mev neutrons, respectively, are studied

    為驗證重離子模擬輻照的可行性，首先進行了等效劑量下的中子輻照與重離子輻照后- al _ 2o _ 3樣品中輻照損傷及其退火效應研究。
  17. First, the solid ice on the surface could have been annealed, meaning that its temperature could have been raised above the 78 kelvin mark to allow the amorphous ice to recrystallize

    首先，表面的固體冰曾經退火過，也就是說其溫度曾升高至78k以上使無定型冰重新結晶。
  18. Went into service in 1953. before being decommissioned in 2002, it served as the flagship of the hong kong fire services department s fireboat team, responding to fire alarms and conducting rescue operations both in hong kong s waters and along the shoreline

    葛量洪號滅火輪於1953年投入服務， 2002年退役前，一直是香港消防處滅火輪隊的旗艦，曾參與無數船舶及沿岸重大火警的撲救工作和海上救援任務。
  19. Aim at the deficiency - the tardiness of the algorithm, it provided a new method - improved simulated annealing algorithm to improve this algorithm and concrete method to realize this thought. then the new method was used to three classic mathematic functions

    重點針對其搜索過程慢的缺點，提出了改進模擬退火演算法的思路和具體實現方法，並通過三個經典數學函數進行了檢驗。
  20. We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation

    在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。
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