量子穿隧效應 的英文怎麼說

中文拼音 [liángzichuānsuìxiàoyīng]
量子穿隧效應 英文
quantum tunnelling
  • 量 : 量動1. （度量） measure 2. （估量） estimate; size up
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 穿 : Ⅰ動詞1 （破; 透） pierce through; penetrate 2 （通過孔、隙、空地等） pass through; cross; go thro...
  • 隧 : Ⅰ名詞1. （隧道; 地道） tunnel; underground pass2. [書面語] （道路） road3. （郊外的地方） suburbsⅡ動詞[書面語] （旋轉） turn
  • 效 : Ⅰ名詞（效果; 功用） effect; efficiency; result Ⅱ動詞1 （仿效） imitate; follow the example of 2 ...
  • 應 : 應動詞1 （回答） answer; respond to; echo 2 （滿足要求） comply with; grant 3 （順應; 適應） suit...
  • 量子 : quantum; gion
  • 效應 : [物理學] effect; action; influence
  1. Quantum tunneling and macroscopic quantum effects in molecular magnets

    分子磁體中的量子隧穿及宏觀量子效應
  2. It is the main purpose of this paper to calculate the energy splitting of ground state and excited states induced by thermally assisted quantum tunneling. first, a brief introduction is given for the theoretical and experimental studies on the magnetic macroscopic quantum effects. then, spin tunneling in a uniaxial ferromagnetic particle in transverse magnetic field is converted to a pseudoparticle moving in effective double - well potential with the help of the effective potential description of quantum spin systems developed by ulyanov and zaslavskii. finally using the periodic instanton method we evaluate the transition amplitude, energy shift and prefactor of wkb exponential and the energy splitting of ground state and the tunneling rate for excited states induced by thermally assisted quantum tunneling are obtained

    文章首先對磁性宏觀量子效應的理論和實驗方面作了簡單介紹，然後藉助于ulyanov和zaslavskii發展的一種等效勢描述方法，把外磁場沿難磁化軸方向時的自旋隧穿約化成在等效雙勢阱中運動的粒子，利用瞬子方法給出基態能級劈裂，最後利用周期瞬子方法分別計算了隧穿幅、能級移動以及wkb前因子，從而給出由於熱助量子隧穿引起的激發態的隧穿率。
  3. With the continued scaling - down of mosfet, the ultra - thin gate oxide causes some serious problems of devices. the ultra - thin sio2 dielectrics cause significant leakage current, consequently increases standby power of device. meanwhile, the reliability of gate dielectrics is also degraded

    當mosfet器件按比例縮小到70nm尺寸以下時，傳統的sio _ 2柵介質的厚度將需要在1 . 5nm以下，如此薄的sio _ 2層產生的柵泄漏電流會由於顯著的量子直接隧穿效應而變得不可接受，器件可靠性也成為一個嚴重的問題。
  4. We have investigated transport properties of electrons in magnetic quantum structures under an applied constant electric field. the transmission coefficient and current density have been calculated for electron tunneling through structures consisting of identical magnetic barriers and magnetic wells and structures consisting of unidentical magnetic barriers and magnetic wells. it is shown that the transmission coefficient of electrons in a wider nonresonance energy region is enhanced under an applied electric field. the resonance is suppressed for electron tunneling through double - barrier magnetic ( dbm ) structures arranged with identical magnetic barriers and magnetic wells. incomplete resonance at zero bias is changed to complete resonance at proper bias for electron tunneling through dbm structures arranged with different magnetic barriers and magnetic wells. the results also indicate that there exist negative conductivity and noticeable size effect in dbm structures

    對磁量子結構中電子在外加恆定電場下的輸運性質進行了研究.分別計算了電子隧穿相同磁壘磁阱和不同磁壘磁阱構成的兩種磁量子結構的傳輸概率和電流密度.計算結果表明，在相當寬廣的非共振電子入射能區，外加電場下電子的傳輸概率比無電場時增加.對于電子隧穿相同磁壘磁阱構成的雙磁壘結構，共振減弱；對于電子隧穿不同磁壘磁阱構成的雙磁壘結構，無電場作用時的非完全共振在適當的偏置電壓下轉化為完全共振，這時的電子可實現理想的共振隧穿.研究同時表明，磁量子結構中存在著顯著的量子尺寸效應和負微分電導
  5. Current flows through the device by the process of quantum tunneling : a small number of electrons manage to jump through the barrier even though they are forbidden to be in the insulator

    電子在元件中利用量子穿隧效應流動，少量的電子可穿過絕緣層的障礙到達另一邊。
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