離子遷移率 的英文怎麼說

中文拼音 [líziqiānyílǜ]
離子遷移率 英文
absolute ionic mobility
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 遷 : Ⅰ動詞1. （遷移） move 2. （轉變） change 3. （古時指調動官職） be appointed to a certain post Ⅱ名詞（姓氏） a surname
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 率 : 率名詞（比值） rate; ratio; proportion
  • 離子 : [物理學] ion
  • 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
  1. And production fashion is selected optional for assurance of the material character of hpch. the hpch material, in which the compound technique route of polybasic components is applied, has better properties such as high workability, high durability, low ion transference rate and so on

    採用多組份復合技術路線配製出高工作性、高耐久性、低離子遷移率的hpch材料，對其宏觀物理力學性能、耐久性能和微觀結構進行了分析研究。
  2. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。
  3. Mobility of ions

    離子的電遷移率
  4. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  5. In this work, the solid solution of li3. 4sio. 4vo. 6o4 as the matrix was chosen because of its suitable path for the mobility of li ions and the different material as the second phase to synthesize a series of lithium ionic conductor composites by sol - gel method, which bases on the opinion of the composites having higher ionic conductivity, and to research the synthetics method, compound - structure - function and so on

    本論文基於復合離子導體具有較高的離子電導率的觀點，以具有鋰離子可遷移通道結構的li _ （ 3 . 4 ） si _ （ 0 . 4 ） v _ （ 0 . 6 ） o _ 4固溶體作為基質，用不同的氧化物或鋰鹽為第二相，採用溶膠-凝膠法合成了一系列復合鋰離子導體新材料，並對其合成方法、組成-結構-性能關系進行了系統的研究。
  6. Finally, after the long - term ion migration test, we analyzed the relation between the current and accumulative charge with the test time, computed the ion mobility and migration distance, and analyzed the distribution variety of na + and k + in the test samples

    對10支試品進行了長期離子遷移試驗，測量了泄漏電流曲線和累計電荷量隨時間變化曲線，計算了試品的離子遷移率和遷移距離，並對試品na ~ + 、 k ~ +的含量進行了化學分析。
  7. On the basis of the two - component soliton vibrator model, the motion of a kink pair consisting of kinks in different sublattices and soliton for the response of the external field are discussed. the mobility of a soliton pair is found

    以二分量孤子的振子模型為基礎，討論了質子子晶格與重離子子晶格中扭結孤子形成的孤子對的運動及其孤子對外場的響應特性，並得到了氫鍵鏈中孤子對的遷移率表達式
  8. Secondly, we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration, square resistance and carrier mobility ). after comparing and analyzing, we can know that the electrical properties were affected by the difference of mn dose, the implantation of c and the annealing temperature

    其次，利用霍爾測試方法測量了每種離子注入樣品的電性質（方塊載流子濃度、方塊電阻及載流子遷移率） ，通過比較分析了解到mn元素注入劑量、 c元素的注入以及退火溫度的不同，都會對樣品的電性質產生影響。
  9. Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature, in the range of the annealing temperature from 650 ? to 850 ?, which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing. furthermore, the square carrier concentration decreased, and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature. these results indicated that the second phase such as mnga, mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature, so the mn + ions which can provide carriers decreased

    由實驗結果可以知道在退火溫度為650 850范圍內，樣品的載流子遷移率隨著退火溫度的提高呈上升趨勢，說明雜質元素的注入對樣品造成晶格損傷，但退火對這些損傷具有修復作用；此外，隨著退火溫度的上升，樣品的方塊載流子濃度不斷下降，加c樣品的方塊電阻不斷上升，這都是因為隨著退火溫度的提高，摻入的mn ~ +離子不再提供載流子，而是形成了mnga 、 mnas等磁性第二相。
  10. The conclusion is that under the neutron and 7 - ray synthetical irradiation environment of a reactor, ionization effects of neutron on the vlsi made with cmos technology are weak, and that the displacement effects of neutron induces the decreases of mobility ratio and density of charge carrier, which causes the decrease of the total static current, so it compensates the increase of the static current caused by the synthetical ionization effects of neutron and - ray

    對試驗結果綜合分析得出：在反應堆的綜合輻照環境下，中子電離效應較弱，並且由於中子位移效應引起載流子遷移率降低和載流子濃度降低，使得總的靜態電流下降，從而抵消中子和射線綜合電離導致的靜態電流增長。
  11. When these organic materials meet each other they may form exciplex which introduce new spectral lines and reduce original ones. we compared the spectra of samples ito / tvk : tpb / alg3 / al and ito / pvk : tpb / mgf / alg3 / al. we found that the spectrum from exciplex is much reduced

    有機材料的載流子遷移率低，不可能實現碰撞離化，它的發光只能是和陰極射線管中的發光一樣，來源於從sioz加速出來的電子對有機材料的直接碰撞。
  12. On the basis of the two - component soliton model, discussed the motion of a kink soliton in the presence of an external force and damping in hydrogen bonded systems, investigated the influence of motion and the optical model of the heavy - ions sublattice on the proton sublattice. the solution, the mobility and the conductivity of a kink soliton are found. the calculated results are in good agreement with the experiment results

    採用二分量弧子模型，討論了在外場和阻尼存在的情況下，氫鍵系統中扭結弧子的運動，研究了重離子子晶格運動和光學模對質子子晶格的影響，獲得了扭結弧子解、遷移率和電導率，計算結果和實驗值相一致
  13. At lower growth temperature, the lower extracting rate of carbon atoms from catalyst particles due to the lower activity of the catalysts resulted in more defects formed in carbon nanotubes. moreover, the lower transportation rate of carbon atoms in catalyst particles also made lots of carbon atoms deposited on the surfaces of grown carbon nanotubes, or on carbon wrapped catalyst particles, even to form amorphous carbon layers

    在較低溫度時，由於催化劑的活性較低，導致石墨面在生長過程中引入的缺陷較多；另一方面，碳原子在催化劑顆粒內遷移速率較低，使得多餘的游離態碳原子（或原子團）可能在納米碳管表面以非晶形式沉積，或者包覆催化劑使其「中毒」失去催化活性，或者直接形成非晶的碳納米顆粒。
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