離子半導體 的英文怎麼說

中文拼音 [lízibàndǎotǐ]
離子半導體 英文
ionic semi conductor
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 半 : Ⅰ數詞1 （二分之一） half 2 （在 中間的） in the middle; halfway 3 （比喻很少） very little; the l...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 體 : 體構詞成分。
  • 離子 : [物理學] ion
  1. Its main purpose is to know different kinds of detecting method. generally, euv and soft x - ray photodetector included five types : ionization gas, semiconductor, electron multiplier and film

    總的說來極紫外和軟x射線光電探測器的類型有氣體電離型、半導體型、電子倍增器以及極紫外和軟x射線膠片（干板） 。
  2. We cover a wide range of broadcasting products including the semiconductor camera light, lithium ion camera battery, nickel metal hydride camera battery, intelligent battery charger, camera accessories, tft lcd color monitor, hd - sdi interface, etc

    公司目前產品包括新聞采訪用半導體光源燈具、攝像機鋰離子電池和鎳氫電池、充電器、電源適配器、 tft彩色高清晰液晶監視器、 hd - sdi高清數字串列介面等。
  3. In this paper, we reported the structural and luminescent properties of si - based oxide films containing semiconductor si, ge or metal al powders prepared by a dual - ion - beam co - sputtering method ( si - sio2 films and al - si - sio2 films ) or rf magnetron sputtering technique ( ge - sio2 films ), and analyze the pl and el mechanism. 1. the composite films of si - sio2 films were prepared by dual ion beam co - sputtering method from a composite target in argon atmosphere

    我們利用雙離子束共濺射和射頻磁控共濺射技術制備了一系列含有半導體si 、 ge顆粒及金屬顆粒al的薄膜，即si - sio _ 2薄膜、 ge - sio _ 2薄膜和al - si - sio _ 2薄膜，分別對它們的結構、光吸收以及發光性質進行了研究。
  4. A trend of photo - induced electron transition from p - type pc to n - type organic semiconductor was strongly supported by the data of sps and fisps measurements, the wire - like configuration of the tio2 tubule nanostructure benefited the electron - transport thereby improved the efficiency of the disassociation of the photogenerated carriers

    表面光電壓測試結果表明，復合材料中存在著強烈的從p -型酞菁材料到n -型氧化物半導體材料的光致電荷轉移。而且tio _ 2的納米管和線狀結構提高了電子的傳輸效率最為明顯，使光生電荷的分離得到顯著改善。
  5. Measurement procedures for resolution and efficiency of wide - bandgap semiconductor detectors of ionizing radiation

    離子輻射的寬能帶隙半導體探測器的分辨和功效的測量規程
  6. The active aspects include ion traps, nuclear magnetic resonance ( nmr ) technique, quantum electrodynamics cavities, josephons junctions, and semiconductors quantum dots

    主要包括離子阱、核磁共振、量子電動力學腔、約瑟夫結和半導體量子點。
  7. The material studied in this paper is a novel kind of semiconductor material which is fabricated by incorporating magnetic transition metal ion mn + into ih - v semiconductor compound gaas

    本論文所研究的dms材料便是由磁性過渡族金屬離子mn ~ +摻入-族半導體化合物gaas中而形成的一類新的半導體材料。
  8. Usually, gaas is employed as substrate for the growth of wide band - gap ii - vi semiconductors due to their similarities in lattice constant. however, as a mature semiconductor material, si has serves electronics greatly

    以往的寬帶-族半導體都是以gaas為襯底材料的，這就造成了寬帶-族半導體光電子材料與si基微電子技術的分離。
  9. Compared with the conventional chemical etching, laser assisted wet chemical etching can eliminate the effect of crystal orientation efficiently and fabricate more diversified etched pattern ; compared with the laser assisted gas chemical etching, the required condition for laser wet etching can be realized more easily and the operation can be simplified ; compared with the ion etching, it has advantages of no ion damage to substrate, avoiding over - etching and cost - effective

    半導體的激光誘導液相腐蝕與普通化學腐蝕相比，可以有效地消除晶體取向影響，製作出更加多樣化的腐蝕圖形;與激光誘導氣相腐蝕相比，其工藝條件更加容易實現，操作更加簡單;與干法離子刻蝕相比，對基片無離子損傷，過度腐蝕容易控制，成本低。
  10. So the study and use of compound powders and thin films get more and more regards. among them the double layered structure nanocompound semiconductor become the focus of study by their high photocatalytic efficiency, fast reaction speed etc. it has been confirmed that the potassium niobate ( k4nb6o17 ) is an excellent semiconductor photocatalyst. its special construction consists in the ion k + in the interlayer can be replaced by other cations, which providing vast space of modifying the material

    層狀化合物中的鈮酸鉀k _ 4nb _ 6o _ （ 17 ）已被證實是一種性能優異的半導體材料，具有光催化和光電轉換性能，其獨特的結構是處于層間的帶正電的k ~ +可以被其它陽離子所替代，正是由於其多元素、復合型的特點，為材料的修飾和改性提供了廣闊的技術空間。
  11. The gettering processes usually are estimated by gettering of au to nanocavity in silicon. in this paper, the characteristics of nanocavity gettering mechanism, diffusion and distributing of aurum and ion implantation in silicon were described. in this work, many bumps on the polishing surface of the silicon, after a he + impantation in and subsequently a hot - treatment, were observed using atomic force microscope ( afm )

    我們注意到，在研究氫、氦離子注入誘生微孔的吸除作用時多以對金雜質的吸除效果來對吸除工藝進行評估，因此本文對微孔吸除機理、金在硅中的擴散和分佈以及半導體中離子注入的特點進行了描述。
  12. In the far from cutoff approximation the energies of empty cavity modes versus radii of three - dimension semiconductor microcavity are evaluated

    摘要半導體微腔中腔模和激子模藕合形成腔極化激元，三維微腔中由於橫向限定腔模和激子模形成離散化的本徵模式。
  13. Recently, anodic aluminum oxide ( aao ) membranes with a regular porous structure have been prepared by electrochemical methods and have widely been used to produce various nanostructured materials within highly ordered channels in the aao membrane in which the diameters and lengths of the inserted nanowire can be well controlled. in this dissertation, after reviewing the latest development in research of the novel system of nano - array composite by using template method, reports my research work of fabricating metal / aao nano - array composite and their novel optical properties in the past few years. different metal / aao composites ranging in volume fraction of the metal showed unusual size - dependent optical properties, some important results obtained are as following : 1

    接著論文全面總結了作者近幾年以金屬aao納米有序陣列復合結構光學特性為選題的研究工作：進一步優化了制備金屬aao納米有序陣列復合結構的工藝參數，較系統地考察了分別由幾種不同金屬（ co 、 ni 、 ag 、 cu ）植入aao模板后，合成的納米有序陣列復合結構樣品的光反射、透射和吸收等一般光學特性，還專門研究了各系列結構樣品吸收邊的頻移、金屬納米粒子表面等離子激元共振吸收特性，以及特殊的半導體光學特性等。
  14. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。
  15. Much attention has been paid on pure or doped zirconia thin films because of their high melting point, low heat conductivity, high ionic conductivity and chemical durability. in the case of metal - oxide - semiconductor ( mos ) devices and high - temperature superconductor ( hts ) wires, zirconia epitaxial thin films are promising buffer layers and have been intensely studied in the past two decades

    純的或摻雜的氧化鋯薄膜因其高熔點、低熱導率、高離子導電能力和高溫化學穩定性而受到相當的重視，而且氧化鋯外延薄膜在金屬氧化物半導體（ mos ） 、高溫超導帶材等領域的應用受到越來越多的關注。
  16. According to the current problems such as low quantum efficiency. limited available sun energy spectrum range, and inefficient recovery, resulted from the practical using of photocatalysis, using the narrowband semiconductor cds ( eg = 2. 5ev ) to compound with tio2 seems to be an effective solution. since it will not only enlarge the region of the absorption with the proper narrow band of cds but also improve the photodegradation efficiency on account of the band overlap of the two, which makes the photo induced electron and holes separate more easily

    本文針對光催化技術應用中存在的tio _ 2光催化量子效率低，吸收利用太陽能光譜范圍有限，催化劑回收困難等問題，通過窄禁帶半導體cds （ e = 2 . 5ev ）的復合，對納米tio _ 2進行了改性研究，一方面，由於cds的窄禁帶寬度可以擴展薄膜的光譜吸收范圍，另一方面，由於能帶的交疊，提高了光生電子和空穴的分離效率，從而提高了薄膜的光催化降解效率。
  17. Diluted magnetic semiconductors ( dmss ) are a new type of semiconductor material formed by substituting magnetic metal ion for nonmagnetic ion

    稀磁性半導體（ dms ）是指在半導體化合物中，由磁性過渡族金屬離子部分替代非磁性離子所形成的一類新型半導體材料。
  18. Rf plasma system 9200 is a barrel - type batch stripping system with optional high temperature capabilities for photoresist removal, nitride etch, and other cleaning applications in semiconductor and mems fabs

    射頻等離子體9200是桶式爐脫模體，擁有可控制的高溫系統可去除光阻材料、氮化物蝕刻和半導體與微型機電系統等方面的清洗功能
  19. The energy calibration is around 1. 1 mev per channel for oxygen ion and iron ions when energy deposition is less than 50 mev in each detector

    從重離子的能譜中我們可以看到，在半導體探測器中的能量沉積大於50mev時，將引起電荷靈敏前置放大器飽和。
  20. Plasma etching has been widely used in the etching process of si devices. now the study is focused on the microfabrication of compound semiconductor

    等離子體干法刻蝕在硅器件的微細加工中已經得到廣泛應用，目前研究的焦點集中在化合物半導體。
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