電子束激光器 的英文怎麼說

中文拼音 [diànzishùjīguāngqì]
電子束激光器 英文
e-beam laser
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 束 : Ⅰ動詞1 （捆; 系） bind; tie 2 （控制; 約束）control; restrain Ⅱ量詞（用於捆在一起的東西） bundle;...
  • 激 : Ⅰ動詞1 （水因受到阻礙或震蕩而向上涌） swash; surge; dash 2 （冷水突然刺激身體使得病） fall ill fr...
  • 光 : Ⅰ名詞1 （照耀在物體上、使人能看見物體的一種物質） light; ray 2 （景物） scenery 3 （光彩; 榮譽） ...
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  • 電子 : [物理學] [電學] electron
  • 激光器 : [光學] （光激射器） laser （縮自 light amplification by stimulated emission of radiation）; optic...
  • 激光 : [物理學] laser 激光靶 laser target; 激光報警器 laser avoidance device; 激光玻璃纖維 laser fibre; ...
  1. Zinc oxide ( zno ) is an important wide band gap ( eg = 3. 37ev ) semiconductor materials, its exciton binding energy is 60mev. these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature

    氧化鋅（ zno ）是一種重要的寬禁帶（ eg = 3 . 37ev ）半導體材料，其激子束縛能高達60mev ，在室溫紫外光電器件方面有巨大的應用潛力。
  2. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ，激子束縛能為60mev ，具備了室溫下發射紫外光的必要條件，在紫外探測器、 led 、 ld等領域有著巨大的發展潛力； zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。
  3. But the life time of krf laser medium is only 2 ns while the pump time of e - beam pump krf laser is over 100 ns. when a 1 ps ultrashort pulse amplified by krf laser amplifier most pump energy is waste. technology of multi pulse amplify can solve this problem

    Krf激光器的工作介質是非儲能介質，上能態有效壽命約為2 - 3ns ，而電子束的泵浦時間一般為上百ns ，放大超短脈沖激光時絕大部分上能態的儲能沒有被利用。
  4. Due to the large exciton binding energy of 60mev, which ensures the high efficient excitonic emission at room temperature, it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices. since the first observation of the stimulated ultraviolet emission at room temperature, zno has become another hotspot in the region of uv light emitting researching

    氧化鋅在室溫條件下具有較高的激子束縛能（ 60mev ） ，保證了其在室溫下較強的激子發光，是製作紫外光電子器件的合適材料，自1997年首次發現zno室溫紫外受激發射以來， zno研究已成為繼gan之後紫外發射材料研究的又一研究熱點。
  5. The optimized experimental conditions are determined and the densities of some elements in the mental alloy standard samples are measured. the experimental results shows that the spectral intensity of the plasma enhances significantly with the increase of the operating voltage and the power density. ( 1 ) to the steel ally sample, the emission intensities of the spectra reach to the maximum values when the laser operating voltage is 1600v and the argon pressure is 600 torr. under the same pressure, the spectral intensity of the plasma in the argon atmosphere is stronger than that in the air. when the argon pressure is 320 to rr, the signal - noise ration is about 5 times than that which the argon pressure is 700 torr, but the temperature of plasma is less about 1000k

    （ 1 ）對于光譜標鋼準樣品，當激光器工作電壓為1600v 、氬氣壓力為600乇時，譜線強度達到最大，並且在相同壓強下，氬氣中的等離子體與空氣中的等離子體相比，其輻射強度明顯增強；氬氣壓力為320乇時的譜線信背比約為600乇條件下的5倍，而等離子體溫度卻下降了近1000k ，即等離子體溫度隨環境氣壓的增大而增大；當激光束的焦斑在樣品表面上下移動時，激光誘導量、等離子體的激發溫度、譜線強度都呈不對稱性分佈，其最大值對應的焦斑位置都位於樣品表面之下0 . 4mm左右。
  6. Zno is a ii - vi wide bandgap semiconductor which is used for various applications such as gas sensors, bulk - acoustic - wave devices, surface - acoustic - wave devices, varistors, light emitting, light detecting devices and so on. undoped and al doped zno thin films have also been widely used in transparent conducting layers because of their higher thermal stability and good resistance against hydrogen plasma processing damage compared with ito ( sn - doped in2o3 ) films

    Zno是一種新型的直接帶隙寬禁帶半導體材料，具有六方纖鋅礦結構，較高的激子束縛能（ 60mev ） ，較低的電子誘生缺陷和閾值電壓低等優點，在uv探測器、藍紫光led和ld等光電子器件領域有巨大的應用潛景。
  7. The following structure groups can now be controlled by players : electronic warfare battery, energy neutralizing battery, mobile hybrid sentry, mobile laser sentry, mobile missile sentry, mobile projectile sentry, scanner array, stasis webification battery, warp scrambling battery

    下列建築現在可以被玩家控制：電子戰平臺，能量吸收（中和）陣列，移動混合崗哨炮臺，移動激光崗哨炮臺，移動導彈發射臺，移動射彈崗哨炮臺，掃描陣列，停滯纏繞光束器，曲速躍遷擾亂器。
  8. The fusion mechanism of large deuterium clusters ( 100 ~ 1000 atoms / per cluster ) in super - intense ultra - short laser pulse field, coulomb explosions of micro - cluster in solids, gases and large - size clusters have been studied using the interaction of a high - intensity femtosecond laser pulses with large deuterium clusters, collision of high - quality beam of micro - cluster from 2. 5mv van de graaff accelerator with solids, gases and large clusters

    摘要用2 . 5mv靜電加器提供的高品質微團簇束與固體、氣體和大尺度團簇（ 100 - > 1000原子團簇）碰撞，超強飛秒激光與大尺度氘團簇相互作用，研究微團簇在大尺度團簇中的庫侖爆炸特性，研究超短超強激光場中大尺度氘團簇的聚變機理。
  9. In cathode ray tube display, the continuation of light emission from phosphor after excitation by the electron beam

    在陰極射線管顯示器中，用電子束激勵后熒光物質光發射的持續現象。
  10. And the pulse duration was compressed from 420 to 220fs by compensated gvd broadening with prism pairs, the intensity achieved on target reached 1017w / cm2. furthermore, the 50mj uv pulse was boosted to 2 - 3j by e - beam pumped amplifier, the laser power reached as high to 2tw

    並採用「天光一號」電子束泵浦krf激光器進行紫外超短脈沖激光的進一步放大，獲得能量2 3j 、脈沖寬度約1 . 2ps的紫外超短脈沖激光輸出，激光功率達到2tw 。
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