電流應激性 的英文怎麼說

中文拼音 [diànliúyīngjīxìng]
電流應激性 英文
voltaic irritability
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 應 : 應動詞1 （回答） answer; respond to; echo 2 （滿足要求） comply with; grant 3 （順應; 適應） suit...
  • 激 : Ⅰ動詞1 （水因受到阻礙或震蕩而向上涌） swash; surge; dash 2 （冷水突然刺激身體使得病） fall ill fr...
  • 性 : Ⅰ名詞1 （性格） nature; character; disposition 2 （性能; 性質） property; quality 3 （性別） sex ...
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. However, the advance of intracellular labeling techniques enables us not only to visualize more complete dendritic arbor for qualitative analysis, but also to examine the relation between changes in the dendritic arborization and the evoked fast postsynaptic curents - 3 - ( fpscs ) in the same neurons during the postnatal development the aim of this study was to systematically examine the postnatal changes in the configuration of fpscs evoked by the focal stimulation of the stratum radiatum of the ca1 region, and the relationship between the dendritic arborization and evoked fpscs in the rat hippocampal ca1 pyramidal neurons using whole - cell blind patch recording technique combined with biocytin intracellular labeling during the postnatal development ( postnatal day 2 - 70, p2 - p70 )

    但是，細胞內染色技術的進步使我們不僅能觀察到更完整的樹突分支來用於定性研究，而且也可以在同一神經元上研究在發育過程中樹突分支的變化與誘發的快突觸后電流（ fastpostsynapticcurrents ， fpscs ）之間的關系。因此，本研究應用盲法腦片膜片鉗記錄並結合biocytin細胞內染色方法，對發育過程中（生后2 70天）局部刺激大鼠海馬ca1區輻射層在錐體神經元誘發的fpscs的成分變化，以及ca1錐體神經元的樹突分支與誘發的fpscs的關系進行了較為系統的研究。
  2. Finally, because high - speed power solenoid valve is one of the most important executive parts in the electronic control diesel engine and the performances of diesel engine are strongly related to the solenoid valve, the response performance of the solenoid valve is investigated. the response performance of the solenoid is influenced by many factors, such as driving voltage, electric driving unit etc. in order to have high excitation voltage and in low maintaining voltage, a high - low voltage electric driving unit is designed, and in order to make the solenoid valve close more rapidly, an active free - wheeling circuit and a bootstrapping circuit are designed in the electric driving unit, too. in the high - low electric driving unit, high voltage and low voltage are supplied by the dc - dc device and by the accumulator respectively

    高速強力電磁閥的響應性能除了與閥本身的結構和材料有關外，與驅動電壓、驅動電路的設計密切相關，本文通過分析，首先開發出一種高低壓驅動電路，高壓電源是山升壓式dc - dc原理獲取的，低壓由蓄電池本身提供，實現高壓強激和低壓維持的功能，電路中採用有源續流電柴汕機中卜軌知介系統的設訓及其七川j敝略的叭究路進行續流，加誣了電磁閥的關閉速度；採用自舉吐路，降低了場效應管對驅動電壓的要求。
  3. On the conventional whole cell patch clamp mode. howevef, under the perforated whole cell patch clamp mode, l00 ll m snp caused a efficient increase in ik (. ) by 20 ' 2 % t4. 5 % at 60mv 4 - ap l0 mm, a kind of selective inhibiter of delayed rectifier potassium current [ ik ( v ) ], can not inhibit the snp - induced increase of ik ( c. )

    應用相同的刺激模式，一在傳統全細胞模式下s pnovm 0卜m于m00vm對ik （ c一尤影啊… o仍）然而在穿孔模式下當細胞膜去極化至均0 v時， 1皿卜m p可明顯增加人0川達zo二士牛5 … 8廠選擇性延遲整流型鉀電流阻斷劑10mm個ap不能抑制snp對ik （ c 。
  4. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  5. For micro - cavity semiconductor laser, station model is proposed in this paper and its steady - state and instantaneous characteristics when the coupling efficiency of spontaneous emission into a lasing mode is equal to 1 are analysised. for current noise, sp noise, noise, p noise, as well as current modulation, sp modulation, modulation and p modulation, using small - signal approximation, we derive the laser ' s corresponding transfer functions. and we calculate their signal - to - noise ratio ( snr ) gain in various parameters through frequency domain analysis in the premiss of large input snr

    本文對于微腔半導體激光器，提出站模型，能夠較直觀簡潔地分析微腔半導體激光器的穩態和瞬態特性，利用此模型對具有重要實用價值的= 1的微腔半導體激光器進行了討論；對于電流i噪聲、自發發射壽命_ （ sp ）噪聲、自發發射因子噪聲、光子壽命_ p噪聲，以及電流調制、 _ （ sp ）調制、調制、 _ p調制，在小信號近似下，得到了相應的激光器的傳遞函數；在大信噪比的前提下，對激光器進行了頻域分析，分別計算了它們在不同參數下的信噪比增益，分析了其抗噪聲性能。
  6. The probe ' s linearity, temperature and dynamic characteristics are analyzed base on principal theory of eddy - current displacement sensor, such as the influence of the coil q value to the linearity characteristic, influence of the diameter of coil to the linearity characteristic, influence of coil resistance to the temperature characteristic, influence of the measuring coil to the syntony loop

    在介紹渦流位移傳感器的基本理論的基礎上，分析了傳感器探頭線性特性、溫度特性、動態特性的影響因素。從探頭線圈q值對線性特性的影響；探頭直徑對線性的影響；探頭線圈電阻對溫度特性的影響；激勵信號溫度特性的影響：檢測線圈?振迴路動態響應特性等方面分析並提出製作高質量傳感器探頭的改進措施。
  7. The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high cod limit, which make ld lasers achieve higher output power and longer ufe. therefore, ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers

    Ingaas / gaas應變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學災變損傷閾值，這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應變量子阱結構可以用於大功率半導體激光器的制備。
  8. Performance simulation of nonlinear dielectric under ac condition

    非線性電介質交流激勵下響應特性模擬
  9. This article analyses the operation principle of the semiconductor laser power in detail, and demonstrates the feasible scheme of the main part of the power according to the special request under the quasi - successive working way, designs the corresponding hardware circuits and software procedures which implement the accurate automatic control of timing, steady voltage and invariable current power supply without pulse voltage and surge current for digital display semiconductor laser power

    本文深入分析了半導體激光電源的工作原理，根據準連續工作方式下的特殊要求，論證了電源的主要環節的可行性方案，設計了相應的硬體電路與軟體程序， （實現了定時的精密自動化控制、數字式顯示機半導體激光電源的無脈沖電壓、無浪涌電流的穩壓恆流供電。
  10. The epitaxial struture for ld is an ingaas / gaas / algaas ssqw grin sch structure and the width of the array bar ia 4mm. the low theshold current 2. 9a the output power 20w at 17. 5a have been achieved by sioi isolation, ohmic contact and facet coating processes. the central wavelength is 979nm. at the same time, model analyses on the structure of the ssqw ld and the fabrication processes have been made for further research

    激光器的生長結構採用ingaas / gaas / algaas分別限制應變單量阱線性緩變折射率波導結構，列陣條寬為4mm ，通過sio _ 2掩膜，歐姆接觸和腔面鍍膜等工藝，實現了閾值電流為2 . 9a ，驅動電流為17 . 5a時輸出功率為20w 。
  11. The goal of this paper is, by serial / parallel combination technique of two - transistos forward converters ( ttfcs ), to keep the merits of the ttfc, and to overcome the shortages of it. the interleaving technique is adopted, while in combining ttfcs. the interleaving technique lowers the net ripple amplitude and raises the effective ripple frequency of the overall converter without increasing switching losses or device stresses

    組合式雙管正激變換器由雙管正激變換器串並聯構成，應用交錯控制策略，在保留雙管正激變換器功率開關管電壓應力低和可靠性高的優點同時，克服了等效占空比小、副邊二極體電壓應力高、輸出電流脈動大等缺點。
  12. By use of g. d. shen ' s tunneling cascade theory we have fabricated high performance and high power tunneling cascade ingaas / gaas / algaas 950nm / 990nm double wavelength strained quantum well lasers on the basis of former tunneling cascade high power lasers and high brightness light emitting diodes. the lasers " two peak wavelength are 95 ? nm and 990 ? nm. el spectrum ' s fwhm is 3nm

    在以往隧道級聯大功率應變量子阱激光器及高亮度發光管的理論研究與實驗的基礎之上，採用沈光地教授提出的隧道級聯思想，成功研製出基於ingaas gaas algaas材料的高性能大功率隧道級聯950nm及990nm雙波長應變量子阱激光器，激射波長分別為952 2nm和990 2nm ， el譜的譜線寬度約3nm ，未鍍膜器件單面最大輸出光功率可達2w以上，閾值電流最低達120ma 。
  13. The main works are listed as follows : ( 1 ) based on the excitation of bi - directional current pulse technique, a new measuring circuit for weak variation of resistance was proposed for electrical resistance tomography. traditional ac current source is n ' t adopted as the exciting source. through fast bi - directional current switching, the polarization effects are eliminated

    該電路主要優點如下：該電路沒有採用傳統的交流電流激勵法作為系統的設計原理，而是通過快速的正負極性電流切換來削弱直流電流激勵時激勵電極的極化效應，使通過直流法來測量氣液兩相流的電阻微弱變化成為可能。
  14. Abstract : this paper describes the thermal effects of a coaxial rf - excitedco2 laser ， based on the balance equations of electron density and energy ， current continuity equation ， and heat conduction equation. depende ncies of the spatial distributions of gas temperature on some discharge parameters arediscussed

    文摘:通過求解放電等離子體中的帶電粒子密度和能量的平衡方程、電流連續性方程以及熱傳導方程，研究了同軸射頻（ rf ）激勵co2激光器中放電混合氣體的溫度效應，分析了有關放電參數對溫度分佈的影響。
  15. Based on the theory mode, the delay time between the beginning of optical illumination and the onset of lock - on switching was calculated, and the transiting speed of electrons, the traversing velocity of the current filament, was obtained as well. the calculated results matched well the experimental results. taking advantage of the ultra - fast response characteristics of the devices, si - gaas pcss ' s are successfully applied to the broadening test of nanosecond laser pulses

    應用單極電荷疇模型數值計算了lock - on效應的光、電時間延遲和載流子的渡西安理工大學碩士學位論文越速度（絲狀電流穿越開關間隙的速度） ，所得計算結果與實驗測試結果基本吻a利川半絕緣gaas光屯導開關的超快光l匕11向應燈性，成功地應川下納秒激光脈沖展寬試驗中，證明了開關可廠泛應川在超快光電響應和光電反饋網路中。
  16. In the calculation of static magnetic field, the finite element method ( fem ) is used. the force characteristic of pma with exciting current and without exciting current are calculated and analyzed

    其中靜態磁場的計算採用了目前應用較為廣泛的有限元方法，對永磁單獨作用的機構靜態吸力特性和激磁電流與永磁共同作用的吸力特性進行了分析計算。
  17. It uses the encouragement of step wave or other impulse current field source to produce the transition process field in earth. in the moment of shutting the power it produce the volute alternating electromagnetic field. from the abnormity of measuring the attenuation character of the second induction electromagnetic field, which produced by underground medium with time change, the conductive capacity and the position of the underground non - homogeneous substance can be analyzed

    瞬變電磁法（ transientelectromagneticmethod ）是一種時間域的電磁勘探方法，利用階躍波或其它脈沖電流場源激勵，在大地產生過渡過程場，斷電瞬間在大地中形成渦旋交變電磁場，測量這種由地下介質產生的二次感應電磁場隨時間變化的衰減特性，從測量得到的異常分析出地下不均勻體的導電性能和位置，從而達到解決地質問題的目的。
  18. In addition, whether and how the bl receptor photl regulate ca2 + - channels in the pm has not been investigated. in present study we aimed to identify ca2 + channels involved in bl signaling cascade. the patch clamp technique was applied to record the channels on the hypocotyl protoplasma of wild type and photoreceptor mutant of arabidopsis thaliana

    採用膜片鉗技術在擬南芥下胚軸原生質體質膜上記錄並鑒定到一種超極化激活的鈣離子通透性通道，對其特性分析發現photl - 5突變體與野生型擬南芥的質膜鈣離子通透性通道電流有顯著差異，該差異可能是二者對胞外鈣表現不同反應的原因。
  19. The paper proves that in the 2d non - linear case, the coulomb gauge is been meet naturally. in the paper, the second - order isoparametric fem is adopted in the non - linear transient magnetic field simulating excited by current source and the results of transient field and static field solved by the second - order isoparametric and linear fem are compared and analyzed, besides, the effect of the eddy currents in the magnetic materials of the different conductivity is analyzed, it is obtained that the magnetic material of high magnetic conductivity and low loss should be chosen in designing of pma

    文中採用二次等參元有限元法推導出在電流源激磁下的非線性瞬態磁場的計算方法和編制了相應的計算程序，並採用二次等參元有限元法和雙線性有限元法分別對瞬態場和靜態場進行了計算，並對計算結果進行了誤差分析，此外，還對不同電導率的導磁材料中渦流產生的影響進行了分析，得到結論設計永磁操動機構時，應選擇導磁性能好，損耗低的導磁材料。
  20. High power semiconductor lasers are widely used in communication, surgery, military, printing and optical pump. but for traditional laser, the output optical power, which is increased by increasing the injecting current, will be limited by the electro - thermal destroy and the catastrophic optical damage ( cod ) at high optical power

    大功率半導體激光器在光通訊、醫療、軍事、印刷和光泵浦等領域有著廣泛的應用，然而當通過增加註入電流提高傳統半導體激光器的光束出功率時，要受到電熱燒毀和光腔面災變性損壞（ cod ）的限制。
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