電荷表面密度 的英文怎麼說
中文拼音 [diànhébiǎomiànmìdù]
電荷表面密度
英文
charge, surface density of- 電 : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
- 荷 : 荷名詞(蓮) lotus
- 表 : Ⅰ名詞1 (外面;外表) outside; surface; external 2 (中表親戚) the relationship between the child...
- 面 : Ⅰ名詞1 (頭的前部; 臉) face 2 (物體的表面) surface; top 3 (外露的一層或正面) outside; the ri...
- 密 : Ⅰ名詞1 (秘密) secret 2 [紡織] (密度) density 3 (姓氏) a surname Ⅱ形容詞1 (距離近; 空隙小)...
- 度 : 度動詞[書面語] (推測; 估計) surmise; estimate
- 表面 : surface; superficies; boundary; face; rind; sheet; skin; outside; appearance
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That is the premise of the bg / ha electrophoresis codeposition. the laws of the electrophoresis deposition of the bg and ha partic les were found by the study on each of their deposition under the different conditions. the electrophoresis codeposition of the bg and ha particles had been studied and the bg / ha graded coating, which is compact in the bottom layer and porous near the surface layer, had been prepared on the surface of the dental implant after the low temperature heat treatment ( about 740 ) and fast firing ( 50 - 80 / min, heat preservation time was 5 - 8min. )
以bg微粉和ha微粉作為塗層原料,通過研究bg和ha微粉在非水介質中的分散情況和帶電特性,選擇冰醋酸為介質,使分散在其中的bg顆粒和ha顆粒表面均帶上正電荷,為電泳共沉積提供前提條件;通過對不同條件下bg 、 ha各自電泳沉積的研究,探索出了兩者電泳沉積的規律;通過對bg和ha在冰醋酸中電泳共沉積以及后續低溫( 740左右)快燒( 50 ? 80 min ,保溫5 ? 8min )熱處理的研究,在鈦合金牙根種植體基體上成功制備出了底層緻密而表層多孔的bg ha梯度塗層。The results showed that the fluorescent intensity of dph decreased and the fluorescent intensity of mc540 increased under sound stimulation, which indicated that the vesicles got looser, the charge density of membrane surface and the plasmalemma hydrophobicity decreased but the membrane fluidity increased
結果表明,聲波刺激使標記質膜的dph熒光偏振值降低、 mc540熒光強度增加。表明一定強度和頻率的聲波刺激使質膜變的疏鬆,膜表面電荷密度降低,疏水性降低,流動性增加。This dissipation process limits the maximum surface change density on a planar surface to 30μc/.
這種耗散作用限制著物體平面的最大表面電荷密度為30c。The absorption spectra indicate that the adsorption of dithiooxamide on the silver nanoparticles results in a red - shift in the spr band, mainly caused by the changes in the microenvironment of the metal nanoparticles and charge density alteration due to the charge transfer between the molecules and metal particles
吸收光譜結果表明銀納米粒子表面吸附二硫代乙二酰胺分子可導致金屬粒子的表面等離子體共振吸收紅移,主要與金屬粒子的微環境改變以及吸附分子與金屬間電荷轉移而導致的金屬粒子內部電子密度改變有關。Considering the geometrical figure of tube and tip, we calculated the surface charge density relative distribution curve of metallic carbon nanotube
摘要考慮碳納米管尺寸及端帽形狀,計算得到了比較精確的金屬型納米管表面電荷密度相對分佈曲線。This paper intends to illustrate by the calculation of concrete examples that conductors are different in their electric charge intensity although they are identical in their surface curvature
摘要通過具體實例計算表明,在靜電平衡的條件下導體表面雖然曲率相同,但電荷面密度卻不一定相同。Namely, the electric field at the drain - side edge of the gate decreases with the increasing of negative charge density in the surface, so the breakdown voltage of gaas mesfet ' s will increase
表面受主態的增多使表面負電荷密度增大,表面聚集的負電荷可以分散漏側柵邊緣處的電力線密度,減弱了柵靠漏一側的電場強度,擊穿電壓提高。Surface - state charge density
表面狀態電荷密度Abstract : in the paper a kind of new idea based on electric field theory is advanced, which is used in research of forming law of electrochmeical perforation with fixed cathode. according to it, the changing law of electric intensity, current density, velocity of perforation in ecm on the machined surface are presented
文摘:根據電場理論,提出了一種研究固定陰極電化學射孔成形規律的新的處理方法,分析了該加工方式下陰極表面電荷密度及加工區的電場強度、電流密度、加工速度等在加工過程中的變化規律,為這種簡易加工方式的合理應用提供了嚴密的理論依據。Improving the resolution of surface charge density measurement
表面電荷密度測量中探頭解析度的提高Surface charge density
表面電荷密度Abstract : articles about the theory of “ distribution function of surface charge density ” are reviewed and that this theory is incorrect is argued from viewpoint of symmetry
文摘:從對稱性角度出發討論了導體表面的電荷分佈問題,並對「電荷密度分佈函數」的理論作了評述As the total negative surface charge of such complexes matches the surrounding charge density of the matrix, the sds - protein complex stops migrating and remains stationary, as typical of steady - state separation techniques
當復合物表面總的負電荷與周圍基質的電荷密度一不能致時,與典型的穩態分離技術相似, sds -蛋白復合物則不再遷移而保持固定。The results show that charge to breakdown qbd depends not only on the gate oxide quality but also on the voltage stress, current density and the gate oxide area
結果表明:相關擊穿電荷q _ ( bd )除了與氧化層質量有關外,還與電壓應力和電流密度以及柵氧化層面積有關。分享友人