電阻溫度系數 的英文怎麼說

中文拼音 [diànwēnshǔ]
電阻溫度系數 英文
coefficient; resistance temperature
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : 動詞(阻擋; 阻礙) block; hinder; impede; obstruct
  • : Ⅰ形容詞(不冷不熱) warm; lukewarm; hot; gentle; mild Ⅱ名詞1 (溫度) temperature 2 (瘟) acute ...
  • : 度動詞[書面語] (推測; 估計) surmise; estimate
  • : 系動詞(打結; 扣) tie; fasten; do up; button up
  • : 數副詞(屢次) frequently; repeatedly
  • 電阻 : (物質阻礙電流通過的性質) resistance; electric resistance (電路中兩點間在一定壓力下決定電流強度...
  • 溫度 : [物理學] temperature
  • 系數 : [數學] coefficient; ratio; modulus; quotient; factor
  1. Bismuth ruthenate and silver were selected as conductor phases and the mixture of calcium oxide - alumina - silicon dioxide ( cao - al _ 2o _ 3 - sio _ 2 ) glass and lead oxide - boron oxide - silicon dioxide ( pbo - b _ 2o _ 3 - sio _ 2 ) glass was selected as inorganic binder phases. it was found that, with the increasing of volume fraction of silver and conductor phase, sheet resistivities descend and there are critical thresholds

    實驗發現,隨著功能相百分含量的增加,膜層的方值逐漸減小,存在兩個臨界閾值,電阻溫度系數偏向正值;功能相中銀百分含量增加,膜層的方值逐漸減小,有一個臨界閾值,電阻溫度系數偏向正值。
  2. Critical temperature coefficient thermistor

    臨界熱敏
  3. Polymeric thermistors - directly heated positive step function temperature coefficient - part 1 : generic specification

    聚合熱敏.直接加熱的陽極階躍函.第1部分:總規范
  4. Indirectly heated temperature coefficient thermistors

    旁熱式負熱敏
  5. The chip of microbridge structure thermocouple type microwave power sensor is designed by using seeback domino offect of thermocouple. ta2n of relatively low resistor - temperature coefficient and si of relatively high thermoelectric power seebeck coefficient are used as thermocouple materials in the chip

    微梁結構熱偶微波功率傳感器晶元就是利用熱偶的塞貝克效應設計的,晶元選擇具有低電阻溫度系數的ta2n和具有高熱的半導體單晶si作為熱偶材料。
  6. Resistance - temperature coefficient of resistance thermometer sensor

    電阻溫度系數
  7. Magnetron sputtering is common method for preparating metal film resistor. by this method, the target is very important for the performance of the resistor

    在金屬膜器的生產過程中,靶材是非常關鍵的,它制約著金屬膜器的精、可靠性、電阻溫度系數等性能。
  8. The average partical size of bismuth ruthenate and pbo - b _ 2o _ 3 - sio _ 2 glass was researched. the smaller bismuth ruthenate partical is, sheet resistivity is lower and temperature coefficient of resistance ( tcr ) is more positive and the refiring change ratio is nearer to zero. the limit size of bismuth ruthenate partical is 0. 56 m

    研究了各相粉體平均粒徑對膜層性能的影響,結果表明:釕酸鉍平均粒徑越小,膜層的方值越小,電阻溫度系數偏正,重燒變化率越接近零值,球磨工藝的極限平均粒徑為0 . 56 m 。
  9. The properties of lacamno3 films were enhanced dramatically with a post annealing treatment in high temperature and high oxygen pressure. the films show the highest so far tmi, which reaches the 300k, the transition of resistivity is kept in a narrow temperature range and the temperature coefficient of resistance ( tcr ) is about 5 - 8 %

    以高、高氧壓的條件對薄膜進行後退火處理,薄膜性質得到極大改善,轉變點提高到了300k ,?也達到了5 - 8 ,不僅提高了轉變點,而且使轉變保持在一個較窄的區間內。
  10. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備,在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時,用氬、氫混合束對沉積膜作高劑量的離子束轟擊,使得被氬離子轟擊后斷鍵的氧化釩分子,再被注入氫降價,然後經適當的退火,成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜(國外報道值為2 - 3 ) ,並研製了單元懸空結構探測器和8 1 , 16 1線性陣列。
  11. Test method for temperature - resistance coefficient of precision resistance alloys

    精密合金電阻溫度系數測試方法
  12. Method of test for temperature coefficient of resistance of alloy wire for precision resistors

    精密器合金絲電阻溫度系數試驗方法
  13. The calculated temperature coefficient of resistivity was 2. 80x10 - 3 k - 1 at the temperature range of 25 - 800. the thermal expansion coefficient ( tec ) was 8. 71 x l0 - 6 k - 1

    率隨升高而變大,具有典型的金屬導體特徵,計算的電阻溫度系數為2 . 80xlo一3k一, 。
  14. The coefficient of resistance to temperature of the nano - bulk al is more than 50 times that of ordinary al materials

    所測定的納米鋁塊體材料的電阻溫度系數是普通多晶鋁塊體材料的50多倍。
  15. 5. manganin thin films with low temperature coefficient of resistance were prepared by magnetron sputtering. the changes of tcr under difference deposition and heat treatment conditions were studied

    首次採用磁控濺射法沉積了低電阻溫度系數的錳銅薄膜,研究了在不同子科技大學博士學位論文沉積及熱處理條件下薄膜tcr的變化。
  16. Pbo - b _ 2o _ 3 - sio _ 2 glass reacts with bismuth ruthenate and lead ruthenate is produced as transition layer. the transition layer can make the interface gradually change and the properties of resistors are improved at the same time. based on the study above, the way to get series of pastes was developed

    鉛硼硅玻璃粉體平均粒徑對厚膜的性能影響有一極值點,約為1 . 51 m ,在該點處膜層的方值最小,電阻溫度系數絕對值最小,重燒變化率最接近零值。
  17. Our company is the biggest enterprise to produce flat ribbon in domestic. the products have outstanding performance, steady resistance temperature coefficient, high service temperature, reasonable price and well - found specification. our products are subjected to domestic and international customer s trust deeply

    本公司是國內最大的扁絲生產企業,產品性能卓越,電阻溫度系數穩定,使用高,價格經濟合理,品種規格全,深受國內外客戶信賴。
  18. Winding wires ; resistance wires, test method of the temperature coefficient of the direct current resistance

    繞組線.第6部分:絲直流電阻溫度系數的試驗方法
  19. Two chinese invention patents, which titled " manganin thin film ultra - high pressure sensors " and " preparation method of manganin thin films with low temperature coefficient of resistance ", have been applied based on the above original work of this thesis

    以上第l 3創新點及第5創新點已經分別申請了兩項中國發明專利: 「薄膜式錳銅超高壓力傳感器」和「低電阻溫度系數錳銅薄膜的制備方法」 。
  20. Temperature coefficient of resistance

    電阻溫度系數
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