高壓放電合成 的英文怎麼說

中文拼音 [gāoyāfàngdiàngěchéng]
高壓放電合成 英文
voltolizing
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 壓 : 壓構詞成分。
  • 放 : releaseset freelet go
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 合 : 合量詞（容量單位） ge, a unit of dry measure for grain （=1 decilitre）
  • 成 : Ⅰ動詞1 （完成; 成功） accomplish; succeed 2 （成為; 變為） become; turn into 3 （成全） help comp...
  • 高壓 : 1 （殘酷迫害; 極度壓制） high handed 2 [氣象學] （高氣壓） high pressure3 （高電壓） high tension...
  • 放電 : [物理學] （electric） discharge; electro-discharge; discharging
  1. Based on the theory of glow discharge, the angle distribution of electron and the recombination process are simulated by adopting monte carlo method. the doping process of n - type diamond film is investigated by this method for the first time. the results indicate : 1 ) the scattering angle of electrons near the substrate is mainly lange - angle, which is helpful to grow diamond film over a large area when glow discharge is kept ; 2 ) after considering the recombination process, the number of particles distribution is provided

    主要結果如下： （ 1 ）研究了電子在雪崩碰撞和分解電離后的角分佈情況，結果表明基片附近電子的散射以大角散射為主，在維持輝光放電的條件下，較高的偏壓和工作氣壓對金剛石的橫向連續成膜是有益的； （ 2 ）考慮了低溫合成金剛石薄膜過程中電子與各種碎片粒子的復合過程，給出了不同的復合系數情況下的粒子數分佈，結果顯示各種碎片粒子的分佈隨復合系數的變化會出現粒子數分佈的漲落現象。
  2. The thesis has done the widespread investigation and study to the domestic and foreign ’ s technologies of analogy low voltage and low power, and analyzes the principles of work, merts and shortcomings of these technologies, based on the absorption of these technologies, it designs a 1. 5v low power rail - to - rail cmos operational amplifier. when designing input stage, in order to enable the input common mode voltage range to achieve rail - to - rail, it does not use the traditional differential input pair, but use the nmos tube and the pmos tube parallel supplementary differential input pair to the structure, and uses the proportional current mirror technology to realize the constant transconductance of input stage. in the middle gain stage design, the current mirror load does not use the traditional standard cascode structure, but uses the low voltage, wide - swing casecode structure which is suitable to work in low voltage. when designing output stage, in order to enhance the efficiency, it uses the push - pull common source stage amplifier as the output stage, the output voltage swing basically reached rail - to - rail. the thesis changes the design of the traditional normal source based on the operational amplifier, uses the differential amplifier with current mirror load to design a normal current source. the normal current source provides the stable bias current and the bias voltage to the operational amplifier, so the stability of operational amplifier is guaranteed. the thesis uses the miller compensate technology with a adjusting zero resistance to compensate the operational amplifier

    本論文對國內外的模擬低電壓低功耗技術做了廣泛的調查研究，分析了這些技術的工作原理和優缺點，在吸收這些技術成果基礎上設計了一個1 . 5v低功耗軌至軌cmos運算放大器。在設計輸入級時，為了使輸入共模電壓范圍達到軌至軌，不是採用傳統的差動輸入結構，而是採用了nmos管和pmos管並聯的互補差動輸入對結構，並採用成比例的電流鏡技術實現了輸入級跨導的恆定;在中間增益級設計中，電流鏡負載並不是採用傳統的標準共源共柵結構，而是採用了適合在低壓工作的低壓寬擺幅共源共柵結構;在輸出級設計時，為了提高效率，採用了推挽共源級放大器作為輸出級，輸出電壓擺幅基本上達到了軌至軌;本論文改變傳統基準源基於運放的設計，採用了帶電流鏡負載的差分放大器設計了一個基準電流源，給運放提供穩定的偏置電流和偏置電壓，保證了運放的穩定性;並採用了帶調零電阻的密勒補償技術對運放進行頻率補償。
  3. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  4. High voltage shunt capacitor installation is comprised of assembling capacitor, high voltage vacuum or sf6 switch, serial reactor, zno arrestor and discharge device. because of its simple structure, small cubage, high output,

    由集合式並聯電容器和高壓真空或六氟化硫斷路器串聯電抗器氧化鋅避雷器及放電線圈等設備組成的高壓並聯電容器成套裝置，具有裝置結構簡單體積小容量大佔地省
  5. The disease in jaw surface will be drop the bite force ; the bite force in the patient who disease in temporal jaw joint descent obviously than normal person ; serious mistake in join deformity, the acute damage in the area arthritis can also drop the bite force evidently ; compare to normal children, wenneberg fund that the bite force lower and the duration of the biggest bite force shorter in the children who fall ill of the chronic arthritis ; the bite force also be used in appraise of the recovery condition in surgical operation 、 disorder in jaw arthritis and the serious bone offset in bite lopsided etc. some materials, it will be produce polarization phenomenon inside when suffered some force in certain direction, at the same time, it produce opposite electric charge in two of the surface ; and resume to the station of on - electrification when removed the outside force ; change the direction of the outside force, the polarity of the electric charge also be changed, this kind of phenomenon is called as “ piezoelectric effect ”

    本文設計了石英晶體壓電傳感器，以它作為傳感元件把咬合力信號轉變成電信號;利用ts5860型準靜態電荷放大器把傳感器的電荷信號轉變成電壓信號;選用usb7822數據採集卡，編寫該數據採集卡的驅動程序，採集該電壓信號並送到計算機里;編寫labview程序對該信號進行處理，得出咬合力值和咬合力曲線，並把測量結果以電子表格的形式保存，以便做進一步的分析和研究。通過對該測量儀的靜態標定、動態標定、溫度漂移標定以及實際測量試驗，證實了本測量儀具有較高的靈敏度、受動態力和溫度變化的影響比較小、能實時地顯示咬合力曲線和較準確地顯示咬合力值，滿足了咬合力測量的要求。
  6. According to the structure characteristics and motion rules of the new type nursing robot, the close loop control system of this new type nursing robot is designed and made with the virtual instrument developing software labwindows / cvi, mcu, piezoelectric ultrasonic motor and high precision optical incremental encoder, which can make the robot reset and rotate by the predefined tracks. at the same time, in order to make the nursing robots used more widely where intensity, precision and price are not high, another control system is designed with the step motor, virtual instrument developing software labwindows / cvi, multi - function daq card pci1711, linear power amplifier. in order to use the nursing robots in acupuncture therapy, a simple finger is designed

    在對其結構特點和運動規律分析的基礎上，本文以虛擬儀器編程語言labwindows / cvi為軟體開發工具，以單片機為控制核心，以超聲電機為驅動元件，以高精度光電編碼器作為速度和角位移檢測裝置，實現了機械臂的復位以及預定軌跡的閉環控制系統的開發;同時為適應一些強度不大、精度要求不高的應用場合，也為降低成本，簡化控制裝置，推動新型護理機械臂短期內應用推廣的需要，以目前應用較為廣泛、控制技術較為成熟的步進電機為驅動元件，用labwindows / cvi開發環境、 pci1711數據採集卡以及線性功率放大器開發了一套控制系統，實現了手臂的復位、勻速運動以及預定軌跡的控制系統;為推廣護理機器人在針灸理療中應用，設計了簡單的手指機構並利用labwindows / cvi開發環境，以及智能材料驅動器? ?層疊式壓電驅動器，進行了手指的抓取以及對驅動對象的轉動控制。
  7. Abstract : the multifunctional inverter power sourcethe handy inverter welding, plating & charging manchine, developed with advanced inverter and micro - electronics control techniques, adopts “ half - bridge power expansion supply midpoint voltage autocontrol setting ”, and technically and effectively having solved inverter subvision of inverter power expansion circuit for leaning magnetism, reliability of high - power inverter setting, achives combination of constantcurrent and constantvoltage export, and realizes low - voltage dc and high - voltage ac double power supply

    文摘:運用先進的高頻逆變技術和微電子控制技術設計研製的逆變式多功能電源便攜式逆變焊鍍充電多用機，採用「半橋式功放級供電中點電壓自動控制調節裝置」 ，在技術上解決了逆變功放電路因偏磁而造成的逆變顛覆，有效地解決了大功率逆變器的可靠性問題；進行多種外特性的綜合設定，實現了恆流與恆壓輸出的合一；與傳統焊機相比，實現了開環和閉環狀態下都互不影響的低壓直流電瓶和高壓交流雙供電
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