高電壓探針 的英文怎麼說

中文拼音 [gāodiànyātànzhēn]
高電壓探針 英文
high voltage probe
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 壓 : 壓構詞成分。
  • 探 : Ⅰ動詞1 （試圖發現） try to find out; explore; sound 2 （看望） call on; visit; see 3 （向前伸出）...
  • 針 : Ⅰ名詞1 （縫衣物用的工具） needle 2 （細長像針的東西） needle like things 3 （針劑） injection; sh...
  • 電壓 : voltage; electric tension; electric voltage
  • 探針 : probe; sound; filling fork; feeler; explorer; probing pin; touch needle; wire probe
  1. This text draws the basic principle of infrared diagnoses based on the primary knowledge of infrared radiation, and analyse the imaging principle of infrared devices ; from the view of infrared diagnostic technology we discuss the fault models and the principium of infrared diagnosis on electrical equipments ; then this paper research the diagnosis of electrical equipments fault by using infrared devices, obtain the hot picture atlas of equipment fault and analysis the hot picture atlas ; the text analyse the various kinds of possible factor which might effect the results of infrared diagnosing in electrical equipments, and propose correspondingly countermeasure against these factor in order to improve the accuracy of measurement ; finally, by using infrared diagnosing techniques analyse and diagnose the interior or exterior fault in part of transformers and arresters in electric network of si chuan, and the results obtained from the text accord with practice

    本文在紅外輻射的基礎知識上引出紅外診斷的基本原理，分析了紅外成像儀的成像原理；並從紅外診斷的角度研究了電氣設備的故障模式及其診斷的機理；研究了利用紅外熱像儀對電氣設備的故障進行診斷，獲取設備故障熱像圖譜並進行熱像圖譜的分析；對影響電氣設備紅外技術診斷結果的各種可能因素進行了分析探討，並針對這些干擾因數，提出了相應的對策，以提高檢測的準確性；論文最後應用紅外熱成像技術對四川電網中的部分變壓器和避雷器典型的內外部故障進行了診斷分析，得到與實際相符的結果。
  2. Comparing and analyzing the synchronous control strategy, which brings up the new method to control the double un - symmetry jars proceed synchronously with the combination of proportional valve and servo valve, which forms closed loop control ; basing on the above methods, models are made to get mathematics models of position control system and to analyze system model theoretically by using pid controller, we can realize regulating parameters, minimizing synchronous errors and enhancing the dynamic performances ; the simulink tool box in matlab software is used to imitate the system according to the model, which not only makes the result visual and easy to adjust the parameters in interactive way but also lets us understand the effects of different parameters and optimizes the dynamic properties. the theory of plc control in dshp is discussed after advanced understanding of the system movements. hardware design and general regulation are given on the base of siemens company products s7 - 200 plc

    本文根據大量的國內外文獻，對研配液壓機的工作原理及設計結構進行了簡介；對位置同步的控制方法進行了比較分析，提出比例閥和伺服閥復合控制的閉環結構來對非對稱雙缸進行同步控制電液比例同步控制方案；在此基礎上著重對比例閥控非對稱缸建模，最後得到位置控制系統的總體數學模型，從理論上對同步系統動態特性進行了分析，並用pid控制器進行參數整定，減小雙缸同步誤差、提高系統的動態響應性能；其中控制性能的分析藉助于matlab軟體中的simulink工具箱，由已建立的數學模型形成模擬模型，得到可視化的模擬結果，從而利於交互方式下調整參數，了解不同的參數對系統的影響，優化同步系統的動態性能；在深入了解系統的動作特性后，對plc控制研配液壓機的原理進行了探討，針對siemens公司s7 ? 200型plc給出了硬體設計的總體規劃，編制出研配液壓機動作控製程序，在編程中著重研究位移傳感器與plc的通訊、雙缸同步運行的pid控制在plc上的實現及bcd碼撥盤輸入程序的植入問題。
  3. This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film. by means of single probe and double probe, the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed. the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained

    利用單探針和雙探針診斷30mm高反應室和50mm高反應室在各種工藝條件下的離子密度和電子溫度，得到這兩個參數在反應室軸向位置的空間分佈、隨功率和氣壓的變化曲線、頂蓋接地和反應室體積對它們的影響，結果表明離子密度為10 ~ 8 10 ~ （ 10 ） cm ~ （ - 3 ） ，電子溫度在4 10ev之間；當頂蓋接地時，該處的等離子體密度明顯大於不接地；在同樣條件下， 50mm高反應室內的離子密度明顯大於30mm高反應室。
  4. A low - voltage voltmeter associated with detachable high - voltage probe for range extension may be calibrated together as a single high - voltage voltmeter

    一個低壓電壓表及其可卸下的擴程高壓探針將被視作為一個單一的高壓電壓表並可一併接受校正。
  5. Dna and rna dot blotting revealed that the f gene was transcribed into mrna in the vero cells. there was expression of the f protein as shown by indirect immunofluorescent assay. the expression began at 48h post - infection and increased thereafter, as indicated by elisa

    將真核表達質粒pcdna3 - f高壓電轉化dam和phop基因雙突變的減毒鼠傷寒沙門氏菌zj111株（ zj111 / pcdan3 - f ） ，並直接轉染vero細胞，分別提取細胞總dna和總rna ， dig標記探針均可檢測到陽性雜交信號。
  6. The traditional level measuring methods can n ' t meet our demand because the subjective investigated is in such a poor systemic condition that the temperature is a little high and there ' s so many mill dust and steam there. in this article we perform systemic discuss and research against the dynamic level measuring method under special working condition on the basis of analyzing kinds of level measuring technique in and abroad. first we establish the pressure distribution mathematic model in storage bin and then deduce the mathematic relation between level height and the uniform stress on the bottom of the bin and designed a resistance compressive stress sensor used for the special condition and put forward a resoivement according to its zero excursion existing in practical use

    由於本研究系統被測對象環境溫度較高且潮濕，同時料倉中有大量粉塵及蒸汽，因此傳統的料位檢測方法不能滿足本測試要求。本文在分析國內外各種物位檢測技術的基礎上，針對特殊工況下動態物料高度的檢測進行了系統的探討與研究。首先建立了料倉中的壓力分佈數學模型，推導出料位高度與倉底均布壓力間的數學關系式，並據此設計了中溫電阻應變式壓力傳感器，同時對它在實際應用中存在的零點漂移等問題提出了改進措施，提高了傳感器性能，解決了上述特殊工況下動態物料檢測的技術難題。
  7. All this has laid a strong foundation for selecting a subject of maskless afm nanolithography, i. e., field - induced oxidation of si semiconductor. in chapter two, a high - intensity current between a probe tip and a sample is discussed first. electrical intensity between them is simulated using matlab software after an electrical model is introduced, thus theoretically analyzing the effect of tip radii, tip - sample separation, radii at the sample, and biases on the morphology of field - induced oxidation

    第二章首先討論了掃描探針與樣品之間的高密度電流，得出了電流密度與偏置電壓和探針?樣品間距密切相關，其關系不能以簡單的線性或指數函數來表述的結論；然後引進了掃描探針場致加工的電場模型，利用matlab模擬探針與樣品之間的電場強度，分析了掃描探針加工條件包括探針針尖曲率半徑、探針-樣品間距、樣品平面半徑以及偏置電壓等對場致氧化物幾何形態的影響。
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