emitting layer 中文意思是什麼
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Aln is an important compound semiconductor material with wide band - gap, which has wurtzite structure too. because of their many excellent physical properties, aln thin films were applied in blue - uv emitting materials, epitaxy buffer layer, soi material and saw device with ghz band
Aln具有許多優異的物理性能，在藍光、紫外發光材料及熱釋電材料、外延過渡層、 soi材料的絕緣埋層和ghz級聲表面波器件等方面有著重要的應用。 -
The result shows that the film thickness of alq3 has remarkable effect on the performance of oleds. in the case of alq3 film thickness of 40 nm, the highest performance device was obtained. it also indicates that the change of alq3 film thickness doesn ’ t affect the emitting spectrum of the double - layer device
結果表明，在npb的膜厚度保持在15nm的情況下， alq3的膜厚度在40nm時，器件的各方面的性能最佳;此時，啟亮電壓最低只有3 . 2v ，而且隨電壓增加而增加的亮度達到最高，穩定性和流明效率也最佳。 -
Since polymer light - emitting diodes ( pleds ) were invented, much efforts have been made to improve the brightness and efficiency of its electroluminescence for realizing pled commercial application. we investigated several factors influencing the brightness, efficiency and spectrum characteristics of pleds el, especially focused our attention on the processes of carrier injection, transport, recombination and annihilation factors influencing brightness efficiency of organic electroluminescence ( oel ) in doped single and double - layer pleds
本文以提高聚合物器件的效率和亮度為目標，提出了提高及b幾種方案，研究了材料性質，器件結構，它們的穩態及瞬態特性及發光機理，特別關注了以兼具電子空穴傳輸能力的分子及摻雜聚合物作成的單雙層摻雜聚合物發光器件中的載流子注入、遷移、復合及湮滅等。 -
Important information is that the distance between metal electrode and emitting layer must be suitable. too large, difficult injection ; too small, excitons quenching. within 0 - 70ma / cm2 injection, no effect was observed
實驗給出影響受激發射的重要信息：金屬電極距增益區距離要適當，太大，器件厚，電注入困難；太小發光激子在電極猝滅。 -
In this paper, micro - cavity semiconductor laser ( mcsl ) with pillar vertical - cavity surface - emitting structure ( vcsel ) which has potential applications in optical communication and optical interconnect is theoretically analyzed, the calculation model that used to discuss the modal performance of rectangular columnar and cylinder vcsel with oxidized aperture is established by using vector field model. the numerical simulations in the case of cylinder structure show oscillating wavelength and threshold gain against inside and outside radius of laser, the layer refractive index and pair number of bragg mirror, thickness, position and oxidized material ' s refractive index of oxidized aperture, in detail. more practically, considering dos shell of laser as non - perfect one, or supposing that dos shell is separated from the laser, we can obtain more significative results
本工作以矢量場模型出發，對具有誘人應用前景的柱形垂直腔面發射結構（ vcsel ）的微腔半導體激光器（ mcsl ）進行了理論分析，建立了用於分析方柱形和圓柱形結構具有氧化孔徑層的激光器的模式特性的理論模型；對圓柱形結構情況進行了數值模擬，得到了振蕩波長、閾值增益隨激光器內外半徑、 bragg反射鏡層折射率、周期數以及氧化孔徑層厚度、位置和氧化物折射率的詳細變化規律；為使理論計算更接近實際，將外加金屬包殼視為非理想導體，或將金屬包殼與激光器結構隔開，分別對這兩種情況下的結果進行了討論。 -
Compared with green light - emitting device, blue oled has many problems such as brightness, efficiency, stability, and color saturation, in this study we investgaited the blue oleds systemically : 1 ) double heterosturcture oled was charaterized. due to the introducing of electron transport layer alq3 and hole - blocking layer balq3, the energy matching was more reasonable and the carrier injecting was more effective in the double - layer device. the maximum efficiency and luminance of this device attained to 1. 90 lm / w and 10, 000 cd / m2, respectively
其次，由於一直以來藍光oled器件的研究處于相對落後的狀態，其發光亮度、效率、穩定性和色純度都無法綠光器件相比，所以本論文在以下幾個方面對藍光器件的性能進行了系統的研究: 1 ）研究了雙異質型藍光oled器件，由於本研究引入了空穴阻擋層，使得載流子的復合和激子的擴散被限定在發光層內，器件的發光效率達到了1 . 90lm / w ，最大亮度達到了10000cd / m2 ，比傳統結構器件的效率和亮度提高了約一個數量級; 2 ）制備了結構為ito / npb / balq3 / alq3 / mg : ag的oled器件，研究發現，當改變各有機層厚度時，器件的電致發光光譜發生了從綠光到藍光的移動。 -
Theoretical analysis shows : compared with oled, moled with alq3 as light - emitting layer can emit different wavelength light by modulating length of cavity, spectral full width at half - maximum of moled changes from 100nm to 10nm ~ 20nm and the light intensity at peak is increased by about 20 times, and luminous efficiency can be enhanced
理論分析表明：通過調節腔長，用alq3作發光層的moled可以發出不同中心波長的光，譜線寬度由oled的約100nm變為10 ~ 20nm ，峰值光強提高20倍左右，總發光效率也有所提高。 -
Distributions of electric field and carrier densities in single layer light emitting diodes
單層有機發光二極體中電場與載流子密度的分佈 -
Influence of hole buffer layer cupc on properties of organic light - emitting devices
效應及氮在其中的作用 -
Plastic substrates with multi - layer coatings for the flat panel displays were introduced, they were sufficiently impermeable to moisture and oxygen for application to moisture - sensitive display applications, such as lcd, organic light emitting displays ( oled ) and poly oled ( polymer oled )
摘要介紹了具有多層塗膜的塑料基片，它們對于潮氣和氧具有足夠的不可滲透性，可用於對潮氣靈敏的顯示器，譬如lcd ，小分子有機半導體發光二極體顯示器和聚合物半導體發光二極體顯示器。
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