epitaxial film 中文意思是什麼

epitaxial film 解釋
晶膜薄膜
  • epitaxial : 晶膜
  • film : n 1 薄層，薄膜；薄霧，輕煙；細絲狀的東西。2 【攝影】感光乳劑，照相軟片，電影膠片；影片。3 〈 pl ...
  1. Moke and fmr studies were performed on epitaxial single crystalline fe ph. d thesis ; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ). the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy, and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films. it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed

    對于外延生長在inas襯底上、厚度為8 - 25ml的超薄fe單晶膜進行了鐵磁共振和磁光研究，獲得以下幾點結果： （ 1 ）膜厚在8 - 25ml之間時，薄膜面內的磁晶各向異性為四度對稱各向異性，垂直單軸各向異性比同厚度的fe gaas系統小許多，而立方各向異性則比fe gaas系統更接近bcc結構的fe 。
  2. C - plane sapphire substrate for opto - electronic applications as nitride based led is one of the latest additions to our sapphire product line. over the years, sapphire has proven to be a reliable base substrate to grow gallium nitride epitaxial film for high brightness led

    C -軸切型的藍寶石是近年來應用在生長氮化鎵藍光led重要的基材。兆晶科技新近增加此產品以因應光電業者殷切的需求。
  3. The purpose of this dissertation is to study the effect of substrate on the characteristics and microstructure of high temperature superconducting yba2cu3o7 - thin film, and well c - axis oriented epitaxial ybco thin films have been deposited on both laalo3 ( 100 ) and r - plane sapphire al2o3 ( 102 ) substrates by inverted cylindrical dc sputtering ( icds ) technique

    =本論文的目的是研究基片對薄膜結構和性能的影響關系，採用倒筒靶直流濺射技術在在laalo3 （ 100 ）和r -平面的藍寶石（ al2o3 （ 102 ） ）兩種基片上制備出c軸取向的外延高溫超導yba2cu3o7 -薄膜。
  4. The films have a smooth and glossy surface. the result of xrd shows that the film demonstrates good properties of integrity, epitaxial - like grown and no other impure phase

    所得薄膜表面平整、光滑且厚度均勻，經xrd測量，結構完整，無其它雜相，基本為外延生長。
  5. Srtio _ 3 ( sto ) thin films exhibit a large electric field dependence of dielectric permittivity. the microwave surface resistance of yba2cu3o7 - x ( ybco ) is much lower than that of the normal conductor. the typical value of rs for ybco epitaxial thin film is smaller than 1 m

    在低溫下， srtio _ 3 （簡寫為sto ）薄膜具有強烈的非線性介電性質，即:介電常數隨外加直流電場變化而變化; yba2cu3o7 - x （簡寫為ybco ）具有極低的微波表面電阻， rs （ 10ghz ， 77k ） < 1m ，而且它們的晶體結構相似，晶格常數匹配以及化學性質相容。
  6. A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )

    A ）利用超高真空化學氣相沉積（ uhv - cvd ）技術在重摻si襯底上生長高晶體質量的亞微米級薄硅外延片。
  7. Because of the limitation of thin silicon film epitaxial technology, it is difficult to grow thin silicon film epitaxial of thickness less than 2 m for a long time, which makes the series resistance large

    但長期以來，由於薄硅外延生長技術的限制，無法生長出優質的厚度小於2 m的薄硅外延層，使硅肖特基二極體的串聯電阻無法降的更低，限制了其截止頻率的提高。
  8. The novel method of liquid phase epitaxial growth process of p - sic from p - sic film on si substrate in c - saturated si solvent is further investigated. some processes of acquiring the fundamental technical parameters and some solution to some critical technical problems are introduced. especially, the optimized technical schemes of effectively restraining such a - sic polytypes as gh - sic coring and growing in p - sic epitaxial growth process is presented

    對利用硅襯底上的- sic薄膜從碳飽和硅熔體中外延生長- sic晶體的創新方法進行了工藝探索，介紹了基本工藝參數的獲取過程和幾個關鍵工藝問題的解決方法，特別是提出了通過工藝條件的調控來有效抑制6h - sic等型同質異構體在- sic生長過程中成核生長的工藝方案。
  9. Besides, a 3 inch double - sided epitaxial ybco super - conducting thin film has been deposited on laalo3 ( 100 ) substrate with the optimum deposition conditions

    論文的最後階段，利用優化的工藝條件制備出了具有超導性能的3英寸ybco雙面超導薄膜
  10. Sbn has currently being investigated as a potential material for many microdevice applications such as pyroelectric infrared detectors, electrooptic modulators, dram, etc. with the rapid development of the optical communication industry, especially the development of integrated optical devices, a successful hetero - epitaxial growth of the film on si substrate is necessary which can reduce loss in the waveguide effectively

    隨著光通訊產業的迅速發展，特別是集成光學的發展，迫切需要在硅襯底上生長擇優取向性好的鈮酸鍶鋇晶體，來有效地減少光在波導結構中的損耗。本論文探討了sbn薄膜的溶膠-凝膠（ sol - gel ）生長技術及其原理。
  11. With the film thickness, which was determined using transmission electron microscopy ( tem ), and the known material number density ( since the film is epitaxial on silicon, the number density is the same as in silicon crystals ), this determines the ge concentration

    由通過隧道電鏡（ tem ）決定的膜厚和已知材料的密度（因為薄膜為硅上外延，密度與硅單晶相同） ，決定了鍺的濃度。
  12. Investigation of au au film epitaxial growth by kinetic monte carlo simulation

    外延薄膜生長的計算機模擬及其微觀機制研究
  13. Monte carlo simulation of epitaxial growth on semiconductor film material

    半導體薄膜材料外延生長的蒙特卡羅模擬
  14. It is proved that the approximate single crystal hetero - epitaxial sbn thin film was not formed until heat - treated at 1000 ? on si substrate

    只有在1000的退火溫度下才能在si襯底上生成近似單晶外延的sbn薄膜。
分享友人
分享到 Line

分享到臉書