epitaxial effect 中文意思是什麼
epitaxial effect
解釋
外延生長作用-
The effect of the traps in the epitaxial layer is analyzed using the medici simulator and shockley - read ? hall model, which indicates the ppc is independent of the traps in the epitaxial layer
利用medici模擬軟體和shockley - read - hall模型研究了體內陷阱對ppc效應的影響，結果表明體內陷阱與ppc效應無關系。 -
The purpose of this dissertation is to study the effect of substrate on the characteristics and microstructure of high temperature superconducting yba2cu3o7 - thin film, and well c - axis oriented epitaxial ybco thin films have been deposited on both laalo3 ( 100 ) and r - plane sapphire al2o3 ( 102 ) substrates by inverted cylindrical dc sputtering ( icds ) technique
=本論文的目的是研究基片對薄膜結構和性能的影響關系，採用倒筒靶直流濺射技術在在laalo3 （ 100 ）和r -平面的藍寶石（ al2o3 （ 102 ） ）兩種基片上制備出c軸取向的外延高溫超導yba2cu3o7 -薄膜。 -
Preparation of samples of the constant composition region of epitaxial gallium arsenide phosphide for hall effect measurements
測量霍爾效應用恆定成分范圍的外延磷化砷化鎵試樣的制備 -
Recently, the n / n + and p / p + epitaxial structures have been applied in the study and production of microwave transistor and ultra - large - scale integrated circuits ( ulsi ), and the memorial maintain time of dynamic random access memory can be improved, latch - up effect and soft - error induced by a particles can be resolved through the combination of epitaxy and ig
採用這種結構與ig工藝相結合，能夠大大地提高動態存儲器dram的記憶保持時間，是解決電路中閂鎖效應（ latch - up ）和粒子引起的軟失效（ soft - error ）的最佳途徑。 -
Misfit characters effect on the dislocation structure and nucleation mechanism in fcc epitaxial crystals
失配性質對面心立方外延晶體失配位錯結構及其形核機制的影響 -
According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon
Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。 -
In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process. the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ), x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy
本論文提出了在藍寶石上引入一層緩沖層材料形成復合襯底，採用常壓化學氣相淀積（ apcvd ）方法在其上異質外延生長sic薄膜的技術，分析了cvd法生長sic的物理化學過程，通過實驗提出sic薄膜生長的工藝條件，並通過x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、光致發光譜（ pl譜）和掃描電鏡（ sem ）對外延薄膜的結構性質進行分析。
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