etching power 中文意思是什麼
etching power
解釋
刻蝕能力-
The etching reactor is developed to obtain reproducible tapers of desired diameter and length. an approach for on - line monitoring of etching using the power meter is demonstrated. based on the experimental data, the relationship between the leak - out optical power and change of time and also that between the leak - out power and width of the remaining width of cladding, and the fiber length exposed to hf acid are summarized
本文對氫氟酸腐蝕法製作光纖耦合器的反應裝置和實驗系統進行了設計，介紹了具體的實驗過程及其注意事項，通過對實驗結果進行分析總結，得出泄漏光功率隨腐蝕時間的變化關系以及泄漏光功率與包層剩餘厚度和腐蝕長度的關系。 -
According to the working principle of thermo - electrode, we demonstrate the structure of enlarged reflection area and the structure of step broaden waveguide to improve the switch ' s performance and bring down the driving power. according to the fabricating condition of our lab, we proposed simple wet - etching method to fabricate the oversized waveguides and peeling - off method to fabricate the electrode
針對全內反射和熱電極的作用特點，在全內反射型熱光開關的設計中提出了擴大反射區結構和漸變展寬結構，理論模擬和實驗結果表明該方法能有效地提高了開關性能，降低了驅動功率。 -
This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film. by means of single probe and double probe, the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed. the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained
利用單探針和雙探針診斷30mm高反應室和50mm高反應室在各種工藝條件下的離子密度和電子溫度，得到這兩個參數在反應室軸向位置的空間分佈、隨功率和氣壓的變化曲線、頂蓋接地和反應室體積對它們的影響，結果表明離子密度為10 ~ 8 10 ~ （ 10 ） cm ~ （ - 3 ） ，電子溫度在4 10ev之間；當頂蓋接地時，該處的等離子體密度明顯大於不接地；在同樣條件下， 50mm高反應室內的離子密度明顯大於30mm高反應室。 -
The company has cad design centre, precision etching and developing production line, chemical cleaning production line, scrubbing production line, high - power exposing machine, cnc drilling machine, suctioning silk screen machine, speedy press, vacuum multilayer press, chemistry sink copper and metal surface treating production line, punches, etc. import or domestic advanced equipment
公司擁有cad設計中心，精密蝕刻、顯影生產線，化學清洗生產線，磨板生產線，大功率曝光機，數控鉆床，吸氣絲印機，快壓機，真空層壓機，化學沉銅及金屬表面處理生產線，沖床等進口或國產先進設備。 -
The lowest threshold current 1. 8ma is achieved with continuous - wave at room temperature, the maximum output power is 7. 96mw. for the resesrch work on the fabrication procedures, we discusses selective oxidation and selective wet etching
利用濕法氧化和選擇性腐蝕相結合工藝研製出室溫連續工作的vcsel ，最低閾值電流為1 . 8ma ，輸出功率為7 . 96mw 。 -
Analyzing the treated yak hairs with sem, xps and et al, it showed under the same conditions, the effect of etching is enhanced with the increasing of power of wave, and the hydrophilicity and dyeing rate enhanced obviously
通過sem 、 xps及吸附性能等的分析，結果表明，在相同參數的等離子體條件下，隨著產生等離子體的微波功率的增大，對氂牛毛纖維表面的刻蝕效果增強；經過等離子體處理過的氂牛毛纖維的親水性，上染率等都有明顯的提高，說明該方法是一條切實可行的路線。 -
In addition, the effect of collisions and a low source power can slow down the etching process
碰撞效應和低電源功率減緩刻蝕的進程。 -
A set of icp etching system has been designed and manufactured through the analysis of the probe diagnosed results. during the study of the system, the emphasis is laid on the matching problem of icp coupled antenna via the rf matching device and rf power source
通過對探針診斷結果的分析，設計並製作一套icp刻蝕系統，重點研究icp耦合天線通過射頻匹配器與射頻功率源的匹配問題，得到很好的匹配效果，在射頻輸出功率為500w以內時，反射功率小於10w 。
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