field effect transistor 中文意思是什麼
field effect transistor
解釋
【無線電】場效果晶體管。- field : n 菲爾德〈姓氏〉。n 1 原野,曠野;(海、空、冰雪等的)茫茫一片。2 田地,牧場;割草場;〈pl 〉〈集...
- effect : n 1 結果。2 效能,效果,效力,效應,作用,功效;影響。3 感觸,印象;外觀,現象。4 旨趣,意義。5 ...
- transistor : n. 【無線電】晶體(三極)管;晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
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Algan gan heterostructure field effect transistor materials grown by molecular beam epitaxy
生長的跨導為186 -
To achieve the high impedance required specially designed "electrometer" vacuum tubes, field effect transistor must be used in the input stage.
為適應高阻抗需要,儀器輸入電路中須用特殊設計的靜電計專用電子管、場效應晶體管。 -
Metal semiconductor field effect transistor mesfet
金屬半導體場效應管 -
Bigfet bipolar isolated - gate field effect transistor
雙極型絕緣柵 -
Modulation doped field effect transistor modfet
調制雜場效應管 -
Jfet junction type field effect transistor
結型場效應晶體管 -
Carbon nanotube field effect transistor
電界?果 -
Fet field effect transistor
場效應晶體管 -
Field effect transistor
場效應電晶體 -
The key parts of barretter are made of irf840 field - effect transistor, the magnetic ring and high frequency choking coil which adopting negative temperature index. such components can provide barretters a wide applicable voltage 160v - 250v. low power consumption, minor temperature rise, stable functions, long life - span
鎮流器核心元件採用irf840場效應三極體,磁環及高頻扼流圈採用負溫系數,這樣的元件選擇使整流器適用電壓范圍寬160v - 250v ,功耗低,溫升小,性能十分穩定,確保其擁有很長的壽命。 -
Rapid screening test methods for thermal sensitive parameter of mos field effect transistor
Mos場效應晶體管熱敏參數快速篩選試驗方法 -
Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs146
半導體分立器件. cs146型硅n溝道耗盡型場效應晶體管.詳細規范 -
Semiconductor discrete device. detail specification for type cs141 silicon n - channel mos deplition mode field - effect transistor
半導體分立器件. cs141型硅n溝道mos耗盡型場效應晶體管詳細規范 -
Semiconductor discrete device. detail specification for type cs140 silicon n - channel mos deplition mode field - effect transistor
半導體分立器件. cs140型硅n溝道mos耗盡型場效應晶體管.詳細規范 -
Semiconductor discrete device. detail specification for type cs5114 cs5116 silicon p - channel deplition mode field - effect transistor
半導體分立器件. cs5114 cs5116型硅p溝道耗盡型場效應晶體管詳細規范 -
Semiconductor discrete device. detail specification for type cs4091 cs4093 silicon n - channel deplition mode field - effect transistor
半導體分立器件. cs4091 cs4093型硅n溝道耗盡型場效應晶體管詳細規范 -
Semiconductor discrete device. detail specification for types cs4856 cs4861 silicon n - channel deplition mode field - effect transistor
半導體分立器件. cs4856 cs4861型硅n溝道耗盡型場效應晶體管詳細規范 -
Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs1 gp, gt and gct classes
半導體分立器件gp gt和gct級cs1型硅n溝道耗盡型場效應晶體管.詳細規范 -
Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs4. gp, gt and gct classes
半導體分立器件gp gt和gct級cs4型硅n溝道耗盡型場效應晶體管.詳細規范 -
Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs10. gp, gt and gct classes
半導體分立器件gp gt和gct級cs10型硅n溝道耗盡型場效應晶體管.詳細規范
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