implanted ion 中文意思是什麼
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But when seeds were bourgeoned 24 - 48h and then implanted by ion beam and dealt with transformation, we obtained 10 % temporary expression
而種子萌動24 - 48h後接受注入和轉化，瞬間表達率約10 。 -
Streptomyces spectabilis 1043 which produces spectinomycin is implanted by n ( superscript + ) ion beam
摘要利用離子注入選育高產壯觀鏈黴菌。 -
The effect of ni + ion on luminescence had not been detected by fluorescence experiments for implanted doped crystals. 5 ) the xe ion peak concentration lies at a depth of about 47nm under the surface. after ion implantations, the two peaks in o1s spectrum merge into a single one
（ 5 ）注入的xe ~ +在距表面47nm處濃度取得最大值，離子注入使兩種類型氧格點的化學環境變得相似， o _ （ 1s ）譜的兩個峰融合為一個峰。 -
The 3t3 mouse fibroblasts and human endothelial cells cultured on the surface of the implanted pp showed much better attachment and proliferation than that for controlled pp. at the same time, the cooft ion implantation also exhibited low macrophage attachment with normal cellular morphology. the above results can cause positive effects on the biocompa tibility when it is used as implant material
研究表明，離子注入后聚丙烯表面的親水性和血液相容性研究表明，通過對pp表面進行cooh ~ +離子注入處理，可以降低其表面能和水接觸角，提高其抗凝血性能和抗鈣化性能，並且pp的抗凝血性能與cooh ~ +離子的注入劑量具有很大的相關性。 -
The research advance and application of ion implanted polymers
離子注入高分子材料的研究動態及應用 -
Structure and atom distribution of multi - charged cr ion implanted polymers
離子注入聚合物的微觀結構和離子濃度分佈 -
Standard guide for determining sims relative sensitivity factors from ion implanted external standards
根據離子移植外標物測定sims有關敏感因素的標準指南 -
The studies on optical properties and irradiation effect of heavy ion implanted samples are very important from both theoretical and applied view points. in this work, the optical properties and defect structures in xe + - implanted ysz and ni + - implanted al2o3 were studied by using optical spectroscopy, tem, xps and trim 96 calculation. it was found that 1 ) a broad absorption band centered at 522 nm was observed in 1 1016 cm - 2 xe + - implanted ysz
離子注入是一種重要的表面改性技術， ysz （ yttria - stabilizedcubiczirconia ）和- al _ 2o _ 3是兩種性能優良的陶瓷，前者是目前發現的最抗輻照的絕緣體，而後者則是抗輻照最差的絕緣體材料之一，研究重離子注入對其光學性能的影響並以此研究輻照效應，有重要的理論意義和應用價值。 -
Diamond - like carbon gradient film on ti6a14v alloy substrate have been prepared by means of plasma source ion implanted - ion beam enhanced deposition ( psii - ibed ). for potential applications as artificial joint materials and artificial cardiac valve materials, its trobological performance and hemocompatibility has also been evaluated in the present ph. d. thesis
本研究採用等離子源離子注入?離子束增強沉積技術（ psii - ibed ）制備了鈦合金基類金剛石梯度薄膜材料，對類金剛石梯度薄膜這一新型人工關節材料和人工心臟瓣膜材料的生物摩擦學性能和血液相容性進行了研究和評價，研究了摩擦磨損對材料血液相容性的影響。 -
In the present work, water plasma ion implantation, instead of the conventional oxygen plasma ion implantation, has been employed to fabricate soi materials. the masses of the three dominant ion species in the water vapor plasma, h2o +, ho +, and o +, are very close to each other, which overcome the problem of co - existence of o and 02 in oxygen plasma source. the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much, which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose
本論文創造性地採用水等離子體離子注入方式代替傳統的氧離子注入方式來制備soi結構材料，由於水等離子體中的三種離子h _ 2o ~ + 、 ho ~ +和o ~ +質量數相差很小，克服了氧等離子體中因o _ 2 ~ +和o ~ +質量數相差大而引起的氧在硅中的分佈彌散，使注入硅后的氧射程分佈相對集中，比較容易退火后形成soi結構材料。 -
Surface chemical analysis - secondary - ion mass spectrometry - determination of relative sensitivity factors from ion - implanted reference materials
表面化學分析.次級離子質譜法.測定離子注入標樣的相對靈敏系數 -
Investigation of ion depth profile in silicon implanted by focused ion beam
聚焦離子束無掩膜注入單晶硅離子濃度濃度分佈的研究 -
Moreover, we observed the concentration profiles of the ion - implanted samples and the diffused samples by c - v method, and discovered that the carrier concentration decreased with increasing of the diffusion depth. whereas, the peak concentration of the ion - implanted samples located at 0. 248151 u m beneath the surface and the peak concentration of the diffused samples located at the surface. furthermore, the carrier concentration of mnas source diffused sample as high as 102 % m3can be obtained, and the surface was much smoother compared with that of the pure mn source diffused sample
發現兩種摻雜方法的載流子濃度大體上都是隨著擴散深度的增加而下降，不同的是離子注入樣品的載流子最高濃度處于離表面深度0 . 248151 m處，而擴散樣品的載流子最高濃度處于表面，並摻錳（ mn ）砷化鋅（ gaas ）材料性質的研究且還發現相對于純mn源擴散樣品來說， mnas源擴散樣品的表面較為光滑，且表面載流子濃度高達1020 cm 』數量級。 -
Secondly, we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration, square resistance and carrier mobility ). after comparing and analyzing, we can know that the electrical properties were affected by the difference of mn dose, the implantation of c and the annealing temperature
其次，利用霍爾測試方法測量了每種離子注入樣品的電性質（方塊載流子濃度、方塊電阻及載流子遷移率） ，通過比較分析了解到mn元素注入劑量、 c元素的注入以及退火溫度的不同，都會對樣品的電性質產生影響。 -
Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature, in the range of the annealing temperature from 650 ? to 850 ?, which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing. furthermore, the square carrier concentration decreased, and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature. these results indicated that the second phase such as mnga, mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature, so the mn + ions which can provide carriers decreased
由實驗結果可以知道在退火溫度為650 850范圍內，樣品的載流子遷移率隨著退火溫度的提高呈上升趨勢，說明雜質元素的注入對樣品造成晶格損傷，但退火對這些損傷具有修復作用；此外，隨著退火溫度的上升，樣品的方塊載流子濃度不斷下降，加c樣品的方塊電阻不斷上升，這都是因為隨著退火溫度的提高，摻入的mn ~ +離子不再提供載流子，而是形成了mnga 、 mnas等磁性第二相。 -
Development trends in ion - implanted polymer films
離子注入技術改性聚合物薄膜的研究進展 -
First, the fact that the phenotypic variation in t1 mainly resulted from transformation of exogenous dna rather than ion beam mutagenesis was verified by rapd - pcr amplification to mutants, exogenous dna - transferred plants and ion beam - implanted plants. second, an absent band, marked by sieg - isso, was found in the rapd - pct amplification to t - 6 and its progenies, which meant that the corresponding mutation was hereditary. this mutation was located between exon 1791 - 2691 and exonl - 395 of abc - transporter gene
T - 6和其t2代植株的rapd - pcr擴增結果中均存在缺失條帶s _ （ 168 - 1850 ， ）表明該缺失條帶對應的變異是可以遺傳的，該變異發生在abc鄭州大學博士論文摘要介即sporter基因exon1791一2691和exonl一395之間。 -
Study of passive q - switched unit of ndyag laser using ion - implanted gaas
離子注入sigaas做激光器被動調q元件的研究 -
At first, we investigated the photoluminescence characterization of theion - implanted samples by spectroanalysis, found that the ion implantation would damage the crystal lattice structure and affect the optical radiation of characteristic. moreover, the crystal lattice structure will be restored after annealing, which can be determined by the change of fluorescence peak intensity and blue migration of wavelength
發現mn ~ +離子、 c離子的注入都會損傷樣品的晶格結構，從而影響樣品的發光特性，而退火處理對這些損傷有一定的修復作用，這可以從發光峰強度的變化及波長的藍移來判定。 -
The physiological character of cellulase and the best culture ph, temperature and stability were quested for. then according to this base, this thesis analyzed the influence of some parameters, including energy and dose for the purpose of finding the best ion mutant parameters, and studied the mechanism of implanted ion on this strain
選擇了纖維分解細菌酶活測定方法以及dns法測定還原糖的最適條件，對纖維素分解細菌的生長特性及纖維素酶的最適溫度、 ph值、溫度和ph值的穩定性進行了探索。
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