inversion carrier 中文意思是什麼
inversion carrier
解釋
反轉載流子-
In this paper, the subband structure in the inversion layer is constructed by solving the self - consistent schr ? dinger equation, thus the carrier effective mass and scattering rate can be obtained. furthermore, taking account for the carrier density in each subband, we establish carrier mobility model in strained - si mosfet
本文通過求解自洽薛定諤方程,確定了應變硅mosfet反型層的子能帶結構,在此基礎上經進一步計算得到子能帶內載流子的有效質量和散射幾率,綜合考慮各子能帶上的載流子的濃度分佈,建立了應變硅mosfet載流子遷移率的解析模型。 -
It is pointed that inversion - layer mobility is different from field - effect mobility for sic mosfet. and a relationship has been established between the ratio of the experimentally - determined field - effect mobility to the actual inversion - layer carrier mobility and interface states
明確指出碳化硅器件的反型層遷移率和實驗測定的場效應遷移率不能等同,並給出了以上二者的比值與界面態密度的定量關系。
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