metal-semiconductor 中文意思是什麼

metal-semiconductor 解釋
金屬半導體的
  • metal : n 1 金屬；金屬製品；金屬合金。2 【化學】金屬元素；（opp alloy）；金屬性。3 【徽章】金色；銀色。4 ...
  • semiconductor : n. 【物理學】半導體。
  1. High purity gallium metal is the basic ingredient for semiconductor compound material, and it is also highly utilized in the manufacture of super conductor material, alloy, alnico etc

    高純度金屬鎵是生產化合物半導體材料的基礎材料，同時它還可以用於生產超導材料、合金材料、永磁材料等。
  2. Electronic and magnetic properties of 3d transition - metal - doped - - 2 chalcopyrite semiconductor

    2黃銅礦半導體的電磁性質
  3. Metal semiconductor field effect transistor mesfet

    金屬半導體場效應管
  4. Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. it has the advantages of low turn - on voltage and high response frequency, compared with pn junction diodes

    肖特基二極體是利用金屬與半導體之間接觸勢壘進行工作的一種多數載流子器件，與普通的pn結二極體相比，它具有正向導通電壓低，響應速度快等優良特性。
  5. Simulation for metal - semiconductor - metal - photodetector msm - pd circuit based - on pspice

    的肖特基勢壘光電探測器的模擬
  6. The progress in sensitizer of photosensitized photoisomerization of norbornadiene, including triplet energy transfer photosensitizer, transition metal compounds photosensitizer, electron transfer photosensitizer and semiconductor photosensitizer, is reviewed

    論述了光敏化降冰片二烯異構化反應敏化劑的研究進展，包括三重態能量傳遞光敏劑，過渡金屬化合物光敏劑，電子轉移光敏劑，半導體光敏劑等幾種類型。
  7. Detail specification of metal rhomb package for semiconductor integrated circuits

    半導體集成電路金屬菱形外殼詳細規范
  8. Electrons from the metal will have to surmount the potential barrier to enter the semiconductor.

    金屬中的電子必須克服這個勢壘層才能進入半導體。
  9. China ' s domestic companies included 86 ic design companies : china integrated circuit design co., ltd., datang microelectronics, c * core, spreadtrum communication, lhwt, shenzhen state microelectronics, shenzhen zte ic design, hisense hiview tech., etc. ; 25 manufacturers : smic, huahong nec, hejian, china resources microelectronics, grace semiconductor manufacturing, csmc tech., asmc, etc ; 10 engaged in packaging and testing, such as nantong fujitsu, jiangsu changjiang electronics, tianshui huatian, 10 semiconductor equipment manufacturers : cetc no. 2 institute, cetc no. 48 institute, beijing sevenstar huachuang, institute of microelectronics of the chinese academy of sciences, institute of optics and electronics of the chinese academy of sciences etc. ; 37 semiconductor materials providers, including grinm semiconductor materials, heraeus zhaoyuan precious metal materials, etc

    國內參展商包括中國華大、大唐微電子、蘇州國芯、展訊通信、六合萬通、深圳國微、深圳中興集成電路、海信信芯科技等86家集成電路設計公司；中芯國際、華虹nec 、和艦科技、華潤微電子、宏力半導體、華潤上華、上海新進等25家主要集成電路製造企業；南通富士通、江蘇長電、天水華天等10家封裝測試企業；中電科技集團第2研究所、第48研究所、七星華創、中科院微電子所、中科院光電所等10家半導體設備企業；有研矽谷、賀利氏招遠等37家半導體材料企業。
  10. We cover a wide range of broadcasting products including the semiconductor camera light, lithium ion camera battery, nickel metal hydride camera battery, intelligent battery charger, camera accessories, tft lcd color monitor, hd - sdi interface, etc

    公司目前產品包括新聞采訪用半導體光源燈具、攝像機鋰離子電池和鎳氫電池、充電器、電源適配器、 tft彩色高清晰液晶監視器、 hd - sdi高清數字串列介面等。
  11. In this paper, we reported the structural and luminescent properties of si - based oxide films containing semiconductor si, ge or metal al powders prepared by a dual - ion - beam co - sputtering method ( si - sio2 films and al - si - sio2 films ) or rf magnetron sputtering technique ( ge - sio2 films ), and analyze the pl and el mechanism. 1. the composite films of si - sio2 films were prepared by dual ion beam co - sputtering method from a composite target in argon atmosphere

    我們利用雙離子束共濺射和射頻磁控共濺射技術制備了一系列含有半導體si 、 ge顆粒及金屬顆粒al的薄膜，即si - sio _ 2薄膜、 ge - sio _ 2薄膜和al - si - sio _ 2薄膜，分別對它們的結構、光吸收以及發光性質進行了研究。
  12. Based on sndm technique, a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed. the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed, and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed. the dynamic switching of ferroelectric domain in ca doping ( pb, la ) tio3 thin film was studied by sndm from the view of electricity

    利用sndm ，從純電學的角度觀察了plct薄膜中的電疇動態反轉過程，由電疇橫向擴張的移動速度的降低，發現了晶界在電疇反轉過程中對疇壁移動的阻擋作用;根據sndm和pfm的在垂直方向上的不同信息敏感深度，得到plct薄膜中電疇反轉過程中電疇是楔形疇;用pfm觀察同一電疇在去掉外加反轉電場后電疇的極化弛豫現象，結果表明空間電荷是發生極化弛豫的主要原因。
  13. When a metal is brought into contact with an n-type semiconductor, electrons will flew from the semi-conductor to the metal.

    使一塊金屬與n型半導體接觸時，電子將從半導體流到金屬。
  14. The end result is that the semiconductor and metal form two strips side by side, with all the electrical contacts ? two for sensing a voltage, two for passing a current in and out ? along the free edge of the semiconductor

    結果半導體與金屬變成相鄰的長條狀，所有電性接點都接到半導體的露出端：包括兩個用來測量電壓的接點，以及兩個分別讓電流流進與流出的接點。
  15. Discrete semiconductor devices - metal - oxide semiconductor field - effect transistors mosfets for power switching applications

    半導體分立器件.電力開關設備的金屬氧化物半導體場效應晶體管
  16. Studies on metal - semiconductor contacts of 6h - sic and some interrelated processes condensed - state physics postgraduate : wu ruibin director : gong min the manufacturing processes as well as electrical and thermal characters of 6h - sic ohmic contacts have been studied in this work. in addition, we fabricated au and ni schottky barrier diodes ( sbds ) on silicon surface of n - type 6h - sic

    本文討論了n型6h - sic歐姆接觸的制備工藝及其基本電學及熱學特性，並在此基礎上採用金屬au及ni在n型6h - sic硅面（ 0001晶向）上制備了具有一定特性的肖特基勢壘二極體。
  17. A model of i - v characteristics under illumination in gan - based metal - semiconductor - metal photodetectors has been built, using steady - state continuity equations and including the effect of surface states

    通過求解一維電流連續性方程和傳輸方程，同時考慮表面態陷阱的作用，建立了gan基msm結構紫外探測器在穩態光照下i - v關系的解析模型。
  18. Schottky barrier diode ( sbd ) is based on the rectification characteristics of metal - semiconductor contact

    肖特基勢壘二極體是利用金屬半導體的整流接觸特性而製成的二極體。
  19. The photoconductive uv detectors based on zno : al thin films, having a metal - semiconductor - metal ( msm ) structure with interdigital ( idt ) configuration, were fabricated by using au as a contact metal. the characteristics of dark and photocurrent of the uv detector and the uv photoresponse of the detector were investigated

    同時， au和zno : al薄膜間已形成歐姆接觸，無光照時，暗電流很小，當用= 350nm的光照射器件時，在6伏偏壓時，光生電流為58 . 05 a 。
  20. It has been shown that the performance of sige heterojunction bipolar transistor ( sige hbt ) in high frequency is much better than that of si bipolar junction transistor ( si bjt ), and is better than that of algaas / gaas metal semiconductor field effect transistor ( algaas / gaas mesfet ) in some aspects

    Sige異質結雙極晶體管（ sigehbt ）的高頻性能大大優于si雙極晶體管（ sibjt ） ，並在某些方面優于algaas / gaasmesfet ，所以sigehbt具有廣闊的應用前景。
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