mos metal-oxide semiconductor 中文意思是什麼
mos metal-oxide semiconductor
解釋
金屬氧化物半導體- mos : 不需要現場收音的無聲取景
- metal : n 1 金屬；金屬製品；金屬合金。2 【化學】金屬元素；（opp alloy）；金屬性。3 【徽章】金色；銀色。4 ...
- oxide : n. 【化學】氧化物。 antimony oxide 銻白，氧化銻。 deuterium oxide 重水，氧化氘。 mercuric oxide 氧化汞。 nitric oxide 一氧化一氮。
- semiconductor : n. 【物理學】半導體。
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Much attention has been paid on pure or doped zirconia thin films because of their high melting point, low heat conductivity, high ionic conductivity and chemical durability. in the case of metal - oxide - semiconductor ( mos ) devices and high - temperature superconductor ( hts ) wires, zirconia epitaxial thin films are promising buffer layers and have been intensely studied in the past two decades
純的或摻雜的氧化鋯薄膜因其高熔點、低熱導率、高離子導電能力和高溫化學穩定性而受到相當的重視，而且氧化鋯外延薄膜在金屬氧化物半導體（ mos ） 、高溫超導帶材等領域的應用受到越來越多的關注。 -
Mos metal - oxide semiconductor
金屬氧化物半導體 -
Since metal - oxide - semiconductor ( mos ) device appeared, integration of integrated circuit ( ic ) expands as moore law. meanwhile the dimension of device scales down, the thickness of sio2 gate dielectric shrinks as the same law. but as the thickness of sio2 gate dielectric reaches at isa, the gate current rises very quickly and reaches at 1 10a / cm2
自從金屬-氧化物-半導體（ mos ）器件出現以來，集成電路的集成度按照摩爾定律增加，相應地，器件的物理尺寸按照等比縮小的原則不斷縮小， sio _ 2作為柵介質的厚度不斷縮小，特徵尺寸在0 . 1 m以下的集成電路要求sio _ 2柵介質的厚度小於1 . 7nm 。
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