polysilicon 中文意思是什麼

polysilicon 解釋
多晶硅
  1. Encourage development of polysilicon and further of spv materials and matching new energy storage cell, aerolite, high titanium slag, titanium sponge and titanium materials

    鼓勵發展多晶硅並延伸至太陽能光伏材料以及配套的蓄能新型電池、航空鋁等鋁製品深加工系列、高鈦渣、海綿鈦及鈦材等金屬合金及材料。
  2. The refractory metals and refractory metal silicides that are used to augment or replace the polysilicon are generally deposited by physical vapor deposition processes.

    用於增強和取代多晶硅的難熔金屬和難熔金屬硅化物通常是用物理蒸發沉積工藝沉積的。
  3. Results show that the efficiency of algae removal by enhanced coagulation with polyalumoferrochloride and polysilicon aluminium sulfate is higher than with others

    結果發現聚合氯化鋁鐵和聚硅硫酸鋁對于藻類的去除有較好的效果。
  4. The purpose of this study is to improve the efficiency of algae removal by enhancing coagulation and filtration and analyze the efficiency of all kinds algae removal in the every phase of the processing and remove remained algae from disposed water. test of enhanced coagulation with polysilicon ferric sulfate, polysilicon ferric chloride, ferric sulfate, polyalumoferrochloride, polysilicon aluminum sulfate, polyaluminium chloride and polysilicon aluminum chloride upon algae removal are described

    本文主要是為強化常規水廠的「混凝?過濾」工藝的除藻效率而進行的實驗室研究，包括對湖泊水中的藻類生物進行強化混凝和過濾，分析了各種藻在「混凝?過濾」工藝各階段的去除率，並對水中的殘存藻進行了深度處理的研究。
  5. Building directly on these 2 - d technologies, we have made 3 - d circuits by coating standard silicon wafers with many successive layers of polysilicon ( as well as insulating and metallic layers ), polishing the surface flat after each step

    利用這些傳統的二維晶片技術，我們已做出三維電路：在標準的矽晶圓上，連續鍍上好幾層的多晶矽及絕緣層與金屬層，每一層鍍完后，都磨光晶圓表面。
  6. In the design of the device, a kind of junction termination technology, polysilicon field plate was introduced at the edge of source and drain of the device. it reduced the electric field of pn junction and nn + at the surface to avoid breakdown at the two points

    在器件設計過程中，在源端和漏端都採用了多晶場板技術，減小了表面pn結和nn +處的峰值電場，避免了器件在這兩處過早擊穿。
  7. Preparation for polysilicon acid polyferric sulfatecoagulant

    無機高分子混凝劑聚硅硫酸鹽的制備
  8. Abstract : a new approach, gate - capacitance - shift ( gcs ) approach, is described for compact modeling. this approach is piecewise for various physical effects and comprises the gate - bias - dependent nature of corrections in the nanoscale regime. additionally, an approximate - analytical solution to the quantum mechanical ( qm ) effects in polysilicon ( poly ) - gates is obtained based on the density gradient model. it is then combined with the gcs approach to develop a compact model for these effects. the model results tally well with numerical simulation. both the model results and simulation results indicate that the qm effects in poly - gates of nanoscale mosfets are non - negligible and have an opposite influence on the device characteristics as the poly - depletion ( pd ) effects do

    文摘:提出了一種新的建立集約模型的方法，即柵電容修正法.此方法考慮了新型效應對柵電壓的依賴關系，且可以對各種效應相對獨立地建模並分別嵌入模型中.另外，利用該方法和密度梯度模型建立了一個多晶區內量子效應的集約模型.該模型與數值模擬結果吻合.模型結果和模擬結果均表明，多晶區內的量子效應不可忽略，且它對器件特性的影響與多晶耗盡效應相反
  9. For the detector design, mems surface micromachining techniques were incorporated tofabricate a simple micro polysilicon air - bridge heater filament with integrated polysilicon electrodes

    有關這個檢測器的設計，是將mems表面微切削加工技術與帶有集成的多晶硅電極的簡單微多晶硅空運線加熱絲的製作結合在一起。
  10. New york ( ap ) - - solar - product stocks rose friday as analysts upgraded shares and lifted profit estimates for companies on expectations of more polysilicon supplies and strong demand next year

    基於對明年多晶硅市場供應緊缺狀況緩解和對太陽能產品強勁需求的預期，分析師們調高股票評級和盈利預測，周五太陽能板塊整體上揚
  11. So polysilicon shortages and the associated high prices will not ease until at least 2009, mr pichel predicts

    所以，矽材的缺乏和由此造成的矽材高價至少在2009年之前是不會得到緩和的，皮徹爾預測道。
  12. Preparation and characterization of polysilicon acid sulfate coagulant

    聚硅硫酸鹽的制備及其性能研究
  13. Wind firms ' worries echo those in the solar - power business, which is also booming but where a shortage of polysilicon has hampered growth

    風力公司擔心像太陽能利用時因為缺少多晶硅以致阻礙發展那樣會出現導致不利於風能利用發展的情況。
  14. Piezoresistive effect of polysilicon films at high temperature

    多晶硅薄膜的高溫壓阻效應
  15. “ xinguang has been one of our major suppliers and we are very pleased that a significant portion of our polysilicon requirement for 2008 remains secured, ” said mr

    "新光一直是我們的主要供應商，我們非常高興地看到，很大一部分我們的多晶硅要求， 2008年仍然有擔保，說： "先生，連苗，董事長兼首席行政主任英利綠色能源。
  16. Although electrons do not move quite as easily in polysilicon as they do in the single - crystal kind, research has produced 3 - d transistors with 90 to 95 percent of the electron mobility seen in their 2 - d counterparts

    雖然電子在多晶矽中移動不如在單晶矽中那麼容易，但在這項研究做出來的三維電晶體里，電子的移動速率已達同類二維晶片的90 ~ 95 % 。
  17. A planar sige heterojunction bipolar transistor was fabricated using polysilicon emitter technology and sige base grown by molecular beam epitaxy. the sige hbt

    室溫下該晶體管的直流電流增益為30到50 ，基極開路下，收集極-發射極反向擊穿電壓
  18. An analytical model for polysilicon quantization in mos devices

    退化建模與模擬方法
  19. Aug 24 ( reuters ) - solar - cell maker china sunergy co ltd ( csun. o : quote, profile, research ) posted a quarterly loss on rising costs for polysilicon, a key raw material, and a drop in average selling price, sending its shares down more than 30 percent

    太陽能電池片製造商中電光伏（ csun ） ，公告了第二季度財務報告，因為原材料多晶硅價格上漲，而產品銷售平均價格卻出現下跌，導致它的股價暴跌超過30 %
  20. The etch of polysilicon emitter bipolar technology

    技術中多晶發射極的腐蝕
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