raman source 中文意思是什麼
raman source
解釋
喇曼輻射源-
Secondly, basing on the theory of on - off gain of small signal, the raman gain coefficient for frequency shift between 0. 5 and 20 thz of standard sigle mode optical fiber is measured by pump - probe method through a super luminescent diode ( sld ) as a broadband small signal probe source. thirdly, numerical simulation analysis of gain characteristic of raman fiber amplifier for c band wdm signal light is made according to the raman gain coefficient of the fiber measured before through target and four rank runge - kutta method. at the invariability of wavelength and maximum power of each of two pumps, schematic of powers of two pumps for best flatness on c band wdm optical gain was found out, at the same time, the factors of resulting in gain saturation is analyzed, too
本文首先應用經典的電磁理論對拉曼光纖放大器的工作機制進行了分析，然後，根據小信號理論推導出的開關增益求出了光纖拉曼增益系數的表達式，採用泵浦-探測波的方法，利用超輻射激光二極體（ superluminescentdiode簡稱sld ）作為探測光源，測量了所用標準單模光纖頻移為0 . 5 - 20thz的拉曼增益系數，之後根據所測得的光纖的拉曼增益系數譜對應用該類光纖構成的放大c波段wdm光信號的拉曼光纖放大器的增益特性採用打靶法和四階龍格- - -庫塔進行了數值計算，在給定了兩個泵浦光源的波長和最大功率后，找出了反向泵浦情況下使c波段wdm光源增益最平坦的兩個泵浦的各自最佳功率，同時也分析了導致信號光飽和的原因。 -
This paper has discussed preparing diamond - like carbon films by means of micro - wave ecr plasma source ion implantation and plasma enhanced chemical vapour deposition. we use the raman spectrum, ft - ir, afm and so on to study the dlc film. the result indicates : different bias voltage, frequency and gas flow rate of psii will have impact on sp3 proportion of dlc films, we find high bias voltage, low frequency and moderate gas flow rate can prepare high sp3 proportion dlc films ; we simply illustrate the influence of bias voltage on sp3 proportion of dlc films in pecvd
研究結果表明：在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發現偏壓的增加、頻率的降低和適中的氣體流量可以制備出sp ~ 3鍵比例高的類金剛石膜；在等離子增強化學氣相沉積技術中，對偏壓對sp ~ 3鍵比例的影響也進行了簡單分析。 -
The micro structure of the films prepared with sih4 as the source gas by atmosphere pressure chemical vapor deposition ( apcvd ) and its influence on the photoluminescence and optical properties have systematically studied by the means of the measurements of tem hrem xps sem and raman
對以硅烷為原料氣採用常壓化學氣相沉積制備的薄膜，利用tem 、 hrem 、 xps 、 sem 、 raman等手段系統研究了沉積溫度、退火后處理等制備工藝對薄膜微結構的影響，分析了微結構的成因。
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