silicon wafer 中文意思是什麼
silicon wafer
解釋
硅晶圓-
Hot plate with silicon wafer lowered to heating position
加熱板與矽晶圓降低至加熱位置。 -
Hot plate with silicon wafer in initial configuration ( before heating )
加熱板與矽晶圓在啟始狀態（加熱前） 。 -
The final ic is made by sequentially transferring the features from each mask, level by level, to the surface of the silicon wafer.
按照順序從每一塊掩膜版上將圖形一層一層地轉移到矽片的表面，就制得了成品集成電路。 -
A beam of light ( typically ultraviolet light from a mercury arc lamp ) shines through the chromium mask, then passes through a lens that focuses the image onto a photosensitive coating of organic polymer ( called the photoresist ) on the surface of a silicon wafer
一束光（通常是汞弧燈發出的紫外光）先穿透鉻光罩，然後通過透鏡把影像聚焦在晶圓表面的有機高分子感光塗料（稱為光阻劑） 。 -
Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate
Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。 -
Our company is one of professional manufactures in china of semiconductors and solar battery cleaning equipments, our main products includes quartz tube cleaning machine, silicon wafer washing equipment, semiconductor wafer etching machine, nitrogen cabinet, dryer and so on
我們是中國從事半導體、太陽能電池清洗設備的一家設備廠商，主要產品有石英管清洗機、矽片清洗機、矽片腐蝕機、氮氣存儲櫃、甩干機等產品。 -
Chemical - mechanical - polishing ( cmp ) has been rapidly developing and finding extensive applications in the integrated circuit ( ic ) manufacturing industry for processing hard disk of computer and silicon wafer with super - smooth and flawless surface
集成電路（ ic ）製造工業中，化學機械拋光（ chemicalmechanicalpolishing ， cmp ）廣泛應用於計算機硬盤片、硅晶片超光滑無損傷表面的加工。 -
The tested materials include ( 100 ) silicon wafer, ( 110 ) silicon wafer, poly - silicon thin film, dry oxidized silicon dioxide thin film, wet oxidized silicon dioxide thin film, lto thin film, standard lpcvd silicon nitride film, low stress lpcvd silicon nitride film, alumni nitride film, zinc oxide film etc. in the nanoindentation experiment of the single crystal silicon, two different mechanical phases are observed at different indentation depth
用納米壓入法對（ 100 ）單晶硅及（ 110 ）單晶硅、多晶硅薄膜、干氧薄膜、濕氧薄膜、 lto薄膜、標準氮化硅薄膜、低應力氮化硅薄膜、氮化鋁薄膜、氧化鋅薄膜等重要材料的楊氏模量和納米硬度進行了系統地測量。報道了單晶硅在壓入過程中觀測到的兩個力學相的變化。 -
Conventionally, this involves coating a silicon wafer with a thin layer of light - sensitive polymer, shining uv light onto it through a template, and then dissolving the affected areas to create a pattern
和傳統方法一樣，先給矽片薄薄地塗上一層對光線十分敏感的聚合物，再隔著一個模板用紫外線照射矽片，然後溶解那些受到影響的區域，這樣就製成了一個圖案。 -
Lithography, as used in the manufacture of ics, is the process of transferring geometic shapes on a mask to the surface of a silicon wafer.
光刻技術應用到集成電路製造中，就是將掩模版的幾何圖形轉移到矽片表面的工藝過程。 -
We found that the cz silicon wafers preannealed by rtp in nitrogen atmosphere are significantly characteristic of ncz silicon wafer, that is, the n - o complexes related stds are also generated in the cz wafer subjected to rtf in na and subsequent proper heat treatments
研究發現，氮氣氛下高溫rtp處理的cz硅樣品在後續熱處理中表現出了摻氮硅的退火特性，進而證明了在氮氣氛下rtp處理中氮發生了內擴散。 -
Current researches, applications, preparation and structure of si3n4 are summarized in this paper. a new conclusion is drawn that silicon wafer can react with nitrogen at the temperature higher than 1100 and in super - pure nitrogen by direct - nitridation of silicon at the temperature from 800 to 1200. the prepared silicon nitride samples are tested by xps ( x - ray photoelectron spectroscopy ), sem ( scanning electron microscopy ), optical microscopy, xrd ( x - ray diffraction ) and edx ( energy dispersive x - ray analysis )
通過矽片在800到1200各個溫度和各種氮氣氣氛下的氮化處理的實驗結果，報道了不同與其他研究者的氮化條件，矽片在氮氣保護的熱處理中的氮化條件為：高於1100的溫度和高純氮的氣氛條件，同時對該氮化硅薄膜進行了金相顯微鏡、掃描電鏡（ sem ） 、 x射線衍射儀（ xrd ） 、 x射線光電子譜（ xps ） 、 x射線能譜儀（ edx ）和抗氧化性等測試和分析。 -
The direct - nitridation of silicon wafer in nitrogen is very important because it involves in silicon wafer ' s heat treatment, ic technics and pulling monocrystal in nitrogen
在矽片的熱處理、集成電路工藝和氮氣保護的拉晶過程中，都涉及到硅的氮化問題，因此矽片氮氣直接氮化的研究意義重大。 -
Surface chemical analysis - chemical methods for the collection of elements from the surface of silicon - wafer working reference materials and their determination by total - reflection x - ray fluorescence spectroscopy
表面化學分析.從矽片工作標準物質表面採集元素的化學方法及其全反射x射線熒光光譜法的測定 -
Silicon wafer machining mechanism, machining method and machining devices are summed up, research status is analyzed in its application, prospect on progress and research work for the future is conducted
摘要歸納總結了硅晶片的加工原理、加工方法和加工設備，分析了硅晶片超精密加工的研究現狀，並對硅晶片超精密加工的發展趨勢和今後的研究工作進行了展望。 -
( 3 ) the free - standing porous silicon films with continuous porous structure were prepared on single crystal silicon wafer by the method of anodic oxidation and electrochemical etching - electropolishing, and firstly used as the anode materials for lithium ion secondary batteries. the capacities of lithium ions storage and the process of charge and discharge of this nano - silicon anode materials as well as the influence of the structure of ps on behavior of storing lithium ions were inspected at length. on the other hand, through the process of charge and discharge in cells, the lithium of light metal element could be electrochemically doped into ps at different doping levels
胡勁松河北師死大學碩士學位論文（ 3 ）利用陽極氧化法在單晶硅基底上制備了多孔硅自支撐膜，並首次將這種具有連續多孔結構的硅材料用作了理離子電池的陽極材料，考察了這種納米級硅陽極的儲鉀性能和充放電過程，分析了材料結構對其儲理行為的影響；另一方面，利用這種電池充放電過程在多孔硅中電化學引入了不同點綴程度的輕金屬鉀元素，考察了鉀點綴對多孔硅自身結構，及至性質所帶來的影響，提供了一種通過電化學方法插入埋離子從而連續調整多孔硅發光性質的有效方法。 -
Silicon nitride ( normally si3n4 ) has been widely used in such fields as micro - electronics and optoelectronics as a promising film material because of its excellent property. many researches have been made on silicon nitride, especially on preparation for it with all kinds of cvd ( chemical vapor deposition ). but the growth mechanism and kinetics of direct - nitridation in nitrogen are not investigated in detail, especially few work has been done on direct - nitridation of silicon wafer in nitrogen during heat treatment
氮化硅（ si _ 3n _ 4 ）具有許多特殊的優越性能，是一種前景廣闊的薄膜材料，並已廣泛應用於微電子、光電子領域，人們對此做了大量的研究，但主要集中在用各種化學氣相沉積的薄膜制備上，對直接氮化法的機理和動力學研究較少，特別是矽片在氮氣保護的熱處理條件下的直接氮化行為研究更少，甚至對矽片在熱處理條件下能否與惰性的氮氣發生反應等問題依然存在爭論。 -
In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous
實驗結果顯示，用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜，與矽片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a / min左右；在基板溫度410時有最大的硬度可達16gpa ；其應力為壓縮應力，可達- 75mpa ；薄膜的臨界荷重為46 . 5un 。 -
With the development of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ), rtp ( rapid thermal process ), which consumes less time and less energy than classical thermal treatments, have been widely employed in semiconductor manufacturing. however, the most importance is that rtp is applied for defects engineering of silicon material. it is generally believed the rtf leads to the injection of additional vacancies into silicon wafer, and then a so - called magic denuded zone ( mdz ) in the near - surface region of cz silicon wafer was formed by controlling the vacancy distribution
隨著大規模集成電路（ vlsi ）和超大規模集成電路的發展，節省時間、節省能量、容易控制的快速熱退火工藝在半導體器件製造工藝中得到了廣泛的應用，並且在硅材料的缺陷工程中發揮了特殊的作用，人們通過高溫快速熱處理在矽片中引入空位，並控制空位的分佈，進而形成了具有較強內吸雜能力的潔凈區。 -
Abstract : the progress of the aqueous solution cleaning technology for silicon wafer in very large scale integrated circuit fabrication is reviewed. the future of the aqueous solution cleaning technology is discussed as well
文摘:本文綜述了超大規模集成電路製造過程中矽片溶液清洗技術的研究歷史及現狀，並對技術的未來發展進行了展望。
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