substrate wafer 中文意思是什麼

substrate wafer 解釋
襯底晶圓
  • substrate : n. 1. 底層，地層。2. 【無線電】（半導體工藝中的）襯底，基底。3. 【生物學】（生態學中的）基層；【生物化學】受質；被酶作用物。
  • wafer : n 1 薄脆餅；薄餅一樣的東西；【物、無】圓片；薄片；晶片；【醫學】糯米紙〈包藥用的干糊片〉。2 （封...
  1. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  2. Upon its establishment tera xtal managed to recruit the top technical personnel in crystal growth and wafer processing fields. their first mission was to manufacture the lithium tantalate crystal substrate for the rf saw filters used in the wireless applications

    凝聚國內長晶及晶圓加工等技術第一流菁英共同組成的經營團隊投入創業，半年來最主要的課題就是在最短的時間內生產出無線通訊器材內射頻表面聲波濾波器
  3. By using the various substrate such as glass, stainless steel, ito < wp = 6 > film and ceremic wafer, we discover that we can deposite the high quality cnx thin film with the high cohesion, high hardness and low friction coefficient on the ceremic substrate

    我們發現在載玻片，不銹鋼片及ito膜玻璃片上沉積的cnx薄膜，由於襯底和膜料的應力差較大，都有薄膜破裂、剝落現象。並且有成膜不均勻現象硬度也較低。
  4. In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous

    實驗結果顯示，用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜，與矽片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a / min左右；在基板溫度410時有最大的硬度可達16gpa ；其應力為壓縮應力，可達- 75mpa ；薄膜的臨界荷重為46 . 5un 。
  5. The demand of the wafer ' s quality become higher too. the result of the final polishing determines the quality of silicon substrate for the final polishing is the last step in the polishing. in this paper, the mechanism and dynamics process of silicon polishing are systematically analyzed

    隨著集成電路向著甚大規模集成電路（ ulsi ）日新月異的發展，作為襯底材料的硅單晶片的尺寸越來越大，特徵尺寸也不斷減小，對硅襯底拋光片的拋光質量的要求也越來越高。
  6. Microelectronic circuits in which the passive components and their metallic interconnections are formed directly on an insulating substrate and the active semiconductor devices ( usually in wafer form ) are added subsequently

    一種微電子電路器件，其中的無源元件及內部金屬連線直接在絕緣襯底上形成，然後再加上有源半導體器件（通常以大圓片形式給出） 。
  7. Slicing and lapping are two basic procedures in wafer substrate process and are introduced firstly in this thesis

    切片和研磨工序是硅器件襯底片制備中的兩道基本工序。本文首先介紹了這兩道工序。
  8. For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi

    另一方面，在相同的晶體生長條件下，重摻硼硅單晶氧含量升高，氧沉澱被增強，能形成有效吸雜點，提高矽片機械強度，抑制void缺陷，有利於提高ulsi的成品率。
  9. It is wildly used to squeeze the adhesive fluid in a syringe onto boards or substrates with the pressurized air for wafer or substrate bonding

    它利用某種方法將一定量的粘接劑擠壓到基板或基片上，以實現晶元和基板之間的粘接。
  10. The influence of various factors, such as substrate bias voltage and temperature, working gas pressure, types of si wafer, etc. on the preparation of cbn has been studied systematically

    系統地研究了襯底偏壓、襯底溫度、工作氣壓、 si晶片的類型等多種因素對制備cbn薄膜的影響。
  11. Al2o3 ceramic wafer substrate had average pore size about 10 m and upper porosity over 40 %, which was added pore - forming agent of graphite and shaped by pressing

    採用壓製成型制備的添加石墨成孔劑的圓片狀al _ 2o _ 3陶瓷支撐體具有較小的平均孔徑（ 10 m左右）和較高的孔隙率（ 40以上） 。
  12. Wafer ceramic substrate application

    晶圓與陶瓷基板應用
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