有缺陷的晶格 的英文怎麼說

中文拼音 [yǒuquēxiàndejīnggé]
有缺陷的晶格 英文
defect lattice
  • 有 : 有副詞[書面語] （表示整數之外再加零數）: 30 有 5 thirty-five; 10 有 5年 fifteen years
  • 缺 : Ⅰ動詞1 （缺乏; 短少） be short of; lack 2 （殘缺） be missing; be incomplete 3 （該到而未到） be ...
  • 陷 : Ⅰ名詞1 （陷阱） pitfall; trap2 （缺點） defect; deficiency Ⅱ動詞1 （掉進） get stuck or bogged do...
  • 的 : 4次方是 The fourth power of 2 is direction
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 格 : 格象聲詞rattle; gurgle
  • 缺陷 : defect; fault; faultiness; vitium; lesion; flaw; disorder; imperfection; drawback; blemish
  1. However, the computation of the g. 723. 1 algorithm is very complex and the single chip cannot provide us with many resources due to the limited buget for every chip, so we have many difficulties to put the g. 723. i algorithm into pratical use

    但該演算法存在計算量和數據存儲量大等固有缺陷，而且實際系統一般都必須重點考慮性能價格比因素，這樣的系統不可能像pc機捉供那麼豐富的資源，所以必須尋找一種運算功能強大而且價格又較合理的晶元才能把g
  2. Again, because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films, among the experiment, we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500, and then slowly cooled until the room temperature. via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements. finally, the films were characterized by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), ultraviolet visible ( uv ) and the hall effect measurement

    再次，由於離子注入會對薄膜表面的結構造成損傷，本實驗把被注入離子的cdte薄膜在n2氣氛中500下退火1個小時，然後緩慢冷卻至室溫。經測試分析，熱處理對晶格表面缺陷的恢復有很重要的作用。最後，利用xrd 、 sem 、紫外可見分光光度計及hall測試系統研究其結構，表面形貌和光電性能。
  3. Another possibility is that the crystal of helium contains numerous defects and lattice vacancies ( yet another effect of the zero - point motion )

    另一種可能是氦的晶體中有許多缺陷和晶格空位（也是零點運動所造成的） 。
  4. We measured the samples " electrical properties ( square resistance, square carrier concentration, carrier mobility and hall coefficient ) at room temperature by hall measurement. the experimental results revealed that all the samples are p - type, with increasing the annealing temperature, the carrier mobility increased and the square carrier concentration decreased. these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing

    所有樣品均為p型導電類型；發現在650到850溫度范圍內，隨著退火溫度的升高，樣品的方塊載流子濃度呈下降趨勢，而載流子遷移率呈上升趨勢；這是由於在退火過程中，隨著退火溫度的升高，有更多的mn參與mnas相的形成，使得以替位受主形式存在的mn減少，並且晶格缺陷得到恢復所致。
  5. Main research contents and achievements of this thesis is as follows : l. this paper carries through particular test and analysis to the basic physical - chemical properties of gaojiawang palygorskite, an environmental mineral fibre, by xay, ir, tem, sem etc. this paper has also discoursed upon the development appliance research status in quo and directions of palygorskite. 2. according to the preceding surface modification research achievements to nonmetal mineral materials, the author combines the self characteristics of palygorskite such as the ratio of length and diameter, typical nano - rank particle diameter, big ratio surface area, well - developed crystal growth imperfection and lattice defect etc. the author also designs organising modification ortho - experimentation of palygorskite by adopting iso - propyl alcohol as thinner of wd - 51 and ndz - 401, and acquires the best craft parameters and craft conditions for gaojiawang palygorskite original ore organising modification, namely : wd - 51 concentration 1. 6 % ( wt % ), modification temperature 120 ?, and modification time 60 mins ; ndz - 401 concentration 2. 0 % ( wt % ), c modification temperature 120, modification time 80 mins

    在前人對非金屬礦物材料表面改性的基礎上，結合環境礦物纖維?坡縷石自身的特點（如：長徑比、典型的納米粒徑、大比表面積、發育的晶體生長缺陷和晶格缺陷等） ，通過對坡縷石有機化改性設計正交試驗，採用（ ch _ 3 ） _ 2choh作為稀釋劑，獲得了採用wd - 51和ndz - 401對高家窪坡縷石原礦進行有機化改性的最佳工藝參數和工藝條件，分別為： wd - 51的濃度為1 . 6 （ wt ） ，改性溫度為120 ，改性時間為60min ； ndz - 401的濃度為2 . 0 （ wt ） ，改性溫度為120 ，改性時間為80min 。
  6. It turns out that such single - crystal ingots are no longer good enough for the job : they have too many “ defects, ” dislocations in the atomic lattice that hamper the silicon ' s ability to conduct and otherwise cause trouble during chip manufacture

    然而這樣一顆單晶棒已經不足以滿足工作需求：它們有太多缺陷分佈在原子晶格之間，這會影響矽的導電能力，而且會在晶片製造過程中帶來麻煩。
  7. By studying the luminescence mechanism and the optical spectra, the two reasons for the diminish of light yield are given : the absorption of the fluorescence by the point defects when that produced and the scatter of the fluorescence by the macroscopic defects when that transmitting. in ce : yap scintillators, the available approach to improve the light yield is to diminish the self - absorption of the point defects

    通過光譜分析和對發光機制的研究，指出在產生熒光輻射過程時晶體中的點缺陷對熒光的吸收以及熒光收集過程中宏觀缺陷對熒光的散射是造成晶體光產額減小的原因，通過減小晶格缺陷是提高晶體光產額的有效途徑。
  8. A new synthetic method, like sol impregnation method, was used to synthesis licoxni1 - xo2 compounds. using this method, reactants ni1 - xcox ( oh ) 2 and liohh2o can be maximizing mixed through the organic reagent impregnating and the original particle pattern and reactivity of the precursor ni1 - xcox ( oh ) 2 can be hold. the results indicate that the method has avoids the shortage brought by classical method

    用xrd 、 sem等分析手段，從理論上分析了前驅體ni （ oh ） _ 2的結構特徵，發現峰形尖銳，晶型完整，晶體有序性好的ni （ oh ） _ 2活性低；而晶體有序性差，結構不完整，有較多的品格缺陷，且（ h01 ）型譜線寬化嚴重的前驅體ni （ oh ） _ 2活性高。
分享友人
分享到 Line

分享到臉書