有缺陷的晶片 的英文怎麼說

中文拼音 [yǒuquēxiàndejīngpiān]
有缺陷的晶片 英文
imperfect wafer
  • 有 : 有副詞[書面語] （表示整數之外再加零數）: 30 有 5 thirty-five; 10 有 5年 fifteen years
  • 缺 : Ⅰ動詞1 （缺乏; 短少） be short of; lack 2 （殘缺） be missing; be incomplete 3 （該到而未到） be ...
  • 陷 : Ⅰ名詞1 （陷阱） pitfall; trap2 （缺點） defect; deficiency Ⅱ動詞1 （掉進） get stuck or bogged do...
  • 的 : 4次方是 The fourth power of 2 is direction
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 片 : 片構詞成分。
  • 缺陷 : defect; fault; faultiness; vitium; lesion; flaw; disorder; imperfection; drawback; blemish
  • 晶片 : chip; crystal plate; wafer
  1. The lamellae in different directions could join and stop growing by each other at the interface of spherulites, which lead the formation of defects

    在球晶的edge - on片晶生長前沿相遇時，形成片晶束。也有的片晶在互相接觸后停止生長，導致缺陷增多。
  2. With plating time going on, the nano - polycrystal gathering grows in two dimensions, and the new nano - polycrystal layer appears simultaneously on the formerly formed nano - polycrystal surface. because the boundary and defect densities in quenched and tempered 45 steel is higher than those in annealed steel, the nano - polycrystal gatherings formed at its surface at the beginning of electro - deposition are more concentrated, and then their size is smaller. the microstructure of the ni - p alloy coating has closed relation with its phosphorus content with the increase of phosphorus content, the microstructure of coating turns from nano - crystalline to the amorphous

    隨著施鍍時間的延長，納米晶聚晶體在橫向二維生長的同時，在納米晶聚晶體的表面上也進行著三維方向的新的一層聚晶體的生長；在調質態45鋼表面，由於其具有比較高的晶界和缺陷密度，因此在沉積初期，納米晶聚晶體的成核密度也較大，從而在二維方向聚晶體的尺度較小，鍍層沉積初期表現為緻密細小的鱗片狀組織。
  3. It turns out that such single - crystal ingots are no longer good enough for the job : they have too many “ defects, ” dislocations in the atomic lattice that hamper the silicon ' s ability to conduct and otherwise cause trouble during chip manufacture

    然而這樣一顆單晶棒已經不足以滿足工作需求：它們有太多缺陷分佈在原子晶格之間，這會影響矽的導電能力，而且會在晶片製造過程中帶來麻煩。
  4. Heavily as - doped silicon substrates are adopted by many device manufactories because of higher as - doping density. therefore, quantitative determination of oxygen precipitation and induced - defects in heavily as - doped silicon is important to the realization of ig

    重摻砷硅襯底片正日益受到器件廠家的青睞，所以研究重摻砷硅單晶中的氧沉澱及誘生缺陷對實現重摻襯底的內吸除有重大意義。
  5. Advanced fpga technology is introduced to improve the integration of digital circuits, and all digital circuits in the original module are integrated in the fpga chips, which could not only reduce the cost, but also improve the reliability and measurement precision of the circuits. high speed digital signal processor ( dsp ) is selected as the coprocessor instead of scm ; it can receive all kinds of commands sent from vxi, analyze and execute the commands, harmonize each section of the module and process the data. higher - conversion - speed comparator chip is adopted to convert the input signals being measured into square waveform signals which could be identified by fpga chip ; it can expand the measurement range of frequency dramatically

    本文在原有vxi總線四通道計數器模塊的設計基礎上，通過對原模塊缺陷的分析，採用一些新的技術和新的電子器件來重新設計該計數器模塊:採用最新的fpga技術來提高數字電路的集成度，將原模塊中的所有數字電路全部集成在fpga晶元中，這樣不僅能節約成本，還能提高電路的可靠性和測量精度;採用高速的數字信號處理器（ dsp ）取代原有的單片機作為協處理器，來接收vxi發來的各種命令，分析命令、執行命令、協調模塊各部分的工作以及對數據的處理;採用轉換速率更高的比較器晶元將輸入的被測信號轉換為fpga晶元能夠識別的方波信號，能極大提高測量頻率的范圍;採用d / a轉換晶元和隔離運算放大器得到隔離通道所需的比較電平，該比較電平值能夠根據實際需求進行設置，能增強模塊的使用靈活性。
  6. For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi

    另一方面，在相同的晶體生長條件下，重摻硼硅單晶氧含量升高，氧沉澱被增強，能形成有效吸雜點，提高矽片機械強度，抑制void缺陷，有利於提高ulsi的成品率。
  7. So chipmakers now routinely deposit a thin, defect - free layer of single - crystal silicon on top of each wafer by exposing it to a gas containing silicon

    因此晶片製造商現在通常會將每塊晶圓暴露在含矽的氣體中，在其表面上沉積薄薄一層沒有缺陷的單晶矽。
  8. As the density of very large - scale integration ( vlsi ) chips increases, the probability of introducing defects on the chips during the fabrication process also increase

    隨著超大規模集成電路晶元生產技術的發展，單片晶元的集成度越來越高。要想一次生產出沒有任何缺陷的晶元已不太可能。
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