注入雜質 的英文怎麼說

中文拼音 [zhùrùzázhí]
注入雜質 英文
implanted dopant
  • 注 : Ⅰ動詞1 （灌入） pour; irrigate 2 （集中） concentrate on; fix on; focus on 3 （用文字來解釋字句）...
  • 入 : Ⅰ動詞1 （進來或進去） enter 2 （參加） join; be admitted into; become a member of 3 （合乎） conf...
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
  • 雜質 : [固體物理] impurity; foreign substance; impurity substance; inclusion; foreign matter
  1. Some gas - sensitive test to deoxidizing gas have carried out based on tio _ 2 films by sputtering and doped some impurity. the experimental results showed that tio _ 2 films have different electron injecting principle and reactive mechanism, the behaviors of gas - sensor for hydrogen and ethanol manifest dissimilitude. this is due to that the oxygen vacancies were compensated by the impurity

    用濺射制備的薄膜摻入部分雜質對還原性氣體進行氣敏測試，發現tio _ 2薄膜對酒精氣體和氫氣有不同的反應機制和電子注入機理，氣敏特性也表現出不同，而雜質的引入反而降低了tio _ 2薄膜的敏感性，可能是由於雜質對氧空位的補償所引起。
  2. The questions the researcher concerned are which system will be chosen and how to obtain the good lithium ionic conductor materials, which is the basic departure of the paper. the addition of second phase in composite can change the interface structure and the conduction mechanism, improve the matrix conductivity and other function such as the sintering, crisping and so on, so the research of composites are an interesting field of the ionic conductors. the synthesis of lithium ionic conductor is often by solid state reaction, but this method needs high temperature and leads to the volatility of lithium which not only causes the drift of the compounds but gets the no well - distributed materials

    研究者所關注的問題是選擇新的體系進行研究，以期得到性能更好的鋰離子導體材料，這也正是本論文的基本出發點；復合離子導體中第二相的加入改善了基質的界面結構和導電機制，不僅可以提高基質材料的電導率，還可以在一定程度上改善材料的其它性能，如燒結性能、脆性和機械強度等。因此復合材料的研究是離子導體一個有廣闊前景的發展方向；合成鋰離子導體，特別是成分復雜的體系以傳統的固相合成法為主，但這種方法需要較高的溫度，容易引起鋰的揮發，從而造成產物組成的偏移，而且不易得到顯微結構均勻的材料。
  3. “ if the valve is shipped from the manufacturer with the grease lines and body bleed piping not connected, ensure that these lines and the connection locations at the valve are closed to prevent debris from getting into the body cavity or grease channels of the valve

    廠家在發運閥門時，如果注油管路未和閥體泄壓管路連接，則應確保這些管路及其與閥門（連接）的接合處都已關閉，以防止雜質進入閥腔或閥門的注油管中。
  4. Since polymer light - emitting diodes ( pleds ) were invented, much efforts have been made to improve the brightness and efficiency of its electroluminescence for realizing pled commercial application. we investigated several factors influencing the brightness, efficiency and spectrum characteristics of pleds el, especially focused our attention on the processes of carrier injection, transport, recombination and annihilation factors influencing brightness efficiency of organic electroluminescence ( oel ) in doped single and double - layer pleds

    本文以提高聚合物器件的效率和亮度為目標，提出了提高及b幾種方案，研究了材料性質，器件結構，它們的穩態及瞬態特性及發光機理，特別關注了以兼具電子空穴傳輸能力的分子及摻雜聚合物作成的單雙層摻雜聚合物發光器件中的載流子注入、遷移、復合及湮滅等。
  5. Substance of rock - forming and ore - forming in both jianchaling and jinchuan nickel deposit mainly derived from the upper mantle, but the former source is relatively depleted mantle. on the other hand, there exsisted the crustal contamination during the formation of the two mineral deposits, the later contaminated poorly and gave priority to deep contamination. ( 5 ) by the comparative study of jianchaling with jinchuan nickel sulflde deposit, it is pointed that small basic - ultralbasic complexes which dis

    （ 5 ）通過對煎茶嶺和金川鎳礦床的比較研究，結合對國內外有關巖漿鎳礦床的比較分析，根據我國的地質特點，提出沿較老地塊邊緣分佈的特別是沿華北地塊北緣分佈的基性?超基性小雜巖體，是找尋大而富的硫化鎳礦床之有利找礦方向；而對較老地塊內部的鎂鐵質侵入體，亦應給予高度注意。
  6. The gettering processes usually are estimated by gettering of au to nanocavity in silicon. in this paper, the characteristics of nanocavity gettering mechanism, diffusion and distributing of aurum and ion implantation in silicon were described. in this work, many bumps on the polishing surface of the silicon, after a he + impantation in and subsequently a hot - treatment, were observed using atomic force microscope ( afm )

    我們注意到，在研究氫、氦離子注入誘生微孔的吸除作用時多以對金雜質的吸除效果來對吸除工藝進行評估，因此本文對微孔吸除機理、金在硅中的擴散和分佈以及半導體中離子注入的特點進行了描述。
  7. Moreover, we observed the concentration profiles of the ion - implanted samples and the diffused samples by c - v method, and discovered that the carrier concentration decreased with increasing of the diffusion depth. whereas, the peak concentration of the ion - implanted samples located at 0. 248151 u m beneath the surface and the peak concentration of the diffused samples located at the surface. furthermore, the carrier concentration of mnas source diffused sample as high as 102 % m3can be obtained, and the surface was much smoother compared with that of the pure mn source diffused sample

    發現兩種摻雜方法的載流子濃度大體上都是隨著擴散深度的增加而下降，不同的是離子注入樣品的載流子最高濃度處于離表面深度0 . 248151 m處，而擴散樣品的載流子最高濃度處于表面，並摻錳（ mn ）砷化鋅（ gaas ）材料性質的研究且還發現相對于純mn源擴散樣品來說， mnas源擴散樣品的表面較為光滑，且表面載流子濃度高達1020 cm 』數量級。
  8. During the construction of concrete cut - off wall of the auxiliary dam in huangbizhuang reservoir, in the section with complex geographical condition, especially the closure section of concrete cut - off wall ( about 120m ), the deterioration of the underground water ' s flow state and the existence of the overseep channel in the stratum result in the several collapses in the dam crest. through the analysis of ever } 1 collapse ' s reason, the proposal of handling measure and its effect, the paper expounds and proves that the cut - off wall can be safely constructed and devoted into normal usage after dealing with collapse. the psper improves the construction technique and method of concrete cut - off wall especially under complex geological condition and in the overseep stratum

    本文通過對歷次塌坑的原因分析及歷次塌坑處理措施的提出和對歷次塌坑處理效果的分析，論證了塌坑處理後防滲墻能安全施工和投入正常運用；完善了在復雜地質條件及強滲漏地層混凝土防滲墻的施工工藝和施工方法；提出了對病險水庫加固及在地質條件復雜地層中修建混凝土防滲墻的施工要點；同時提出了在強滲漏地層修建防滲墻的關鍵是在防滲墻施工前通過預注漿封閉強滲漏通道的重要論點；對塌坑一些處理措施中的不足之處亦進行了分析研究，供國內類似工程借鑒。
  9. Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature, in the range of the annealing temperature from 650 ? to 850 ?, which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing. furthermore, the square carrier concentration decreased, and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature. these results indicated that the second phase such as mnga, mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature, so the mn + ions which can provide carriers decreased

    由實驗結果可以知道在退火溫度為650 850范圍內，樣品的載流子遷移率隨著退火溫度的提高呈上升趨勢，說明雜質元素的注入對樣品造成晶格損傷，但退火對這些損傷具有修復作用；此外，隨著退火溫度的上升，樣品的方塊載流子濃度不斷下降，加c樣品的方塊電阻不斷上升，這都是因為隨著退火溫度的提高，摻入的mn ~ +離子不再提供載流子，而是形成了mnga 、 mnas等磁性第二相。
  10. The separated phase of blends and carrier injection, transport and decay were firstly investigated by monitoring two different transient el peaks

    首次引入監測基質和雜質兩個瞬態電致峰值來研究低摻雜體系的相分離及載流子注入、遷移和湮滅過程。
  11. We simulated and adjusted the energy and dose of implant impurity by the aid of silvaco software so as to confine the vt value in a reasonable range and finally we got eligible device samples

    最後，我們基於silvaco軟體模擬並調節了雜質注入的能量和劑量，並結合實驗結果調整了pmos管和nmos管的閾值電壓，制備出了合格的bmhmt工作模式的soi異質結mosfet單管。
  12. In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties

    本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣（ 100 ） gaas單晶襯底中，然後進行不同溫度和時間的快速熱退火處理，研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。
  13. We have investigated the influence on the character of cdte thin films with different conditions and parameters. secondly, in normal temperature, cdte thin films are high resistance semiconductor, for improving its electricity capability, we commonly inject benefactor or acceptor impurities into the pure cdte thin films, the ion influx technique is a good method among many adulteration means. at present, the literatures on the doped cdte thin films by the ion influx technique have a fat lot reports

    本論文首先採用近距離升華法在不同基片上制備cdte薄膜，研究了不同工藝條件和參數對cdte薄膜性質的影響。其次，在常溫下，本徵cdte薄膜均為高阻半導體。為了改善其導電性能，通常向cdte薄膜中摻入施主或受主雜質，其中離子注入技術是摻雜方法之一。
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