漂移速率 的英文怎麼說

中文拼音 [biāoyísùlǜ]
漂移速率 英文
drift speed
  • 漂 : 漂動詞[方言] （事情、帳目等落空） fail; end in failure
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 速 : Ⅰ形容詞（迅速; 快） fast; rapid; quick; speedy Ⅱ名詞1 （速度） speed; velocity 2 （姓氏） a surna...
  • 率 : 率名詞（比值） rate; ratio; proportion
  • 漂移 : 1 （漂流移動） be driven by the current; drift about2 [電子學] drift; shift; shifting; shunt runn...
  • 速率 : speed; rate; tempo
  1. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  2. Drift rates will depend upon both the strain level and the temperature.

    漂移速率既依賴于應力的大小，又依賴于溫度。
  3. The static drift error and dynamic test error of liquid floated reactive rate gyro are analyzed also

    分析了液浮力反饋速率陀螺的靜態漂移誤差和動態測量誤差。
  4. Algan / gan hemt has high breakdown electric field, fast electron drift velocity and large electron concentration, so it has been used more and more in high frequency and large power fields

    Algan / ganhemt由於具有擊穿電壓高、電子漂移速度快和電子濃度大等特點，已被越來越多地應用於高頻及大功率領域。
  5. Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity

    Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。
  6. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  7. As the only one among nearly 200 polytypes of different crystalline sic, which has a cubic crystalline structure, p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes

    碳化硅是碳化硅近200種不同結晶形態中唯一的純立方結構晶體，載流子遷移率高，電子飽和漂移速度大，更適合於製造電子器件特別是電力電子器件之用。
  8. This theoretic model employs the basic idea of correlation measurement, achieve the density wave speed by the correlation of the signals of upper and lower sensors, and get the total flow rate and water cut through the theoretic relationship of density wave speed and total flow rate as well as holdup with the help of drift flux model so as to accomplish the oil / water two - phase flow measurement at last, using the limited available experiment data, the theoretic model has been simplified into an applicable linear alternative which is suitable to homogeneous oil / water two - phase flow measurement to accomplish the oil / water two - phase flow measurement using the density wave phenomena is of highly theoretically valuable for density wave theory research as well as oilavater two - phase flow measurement research. to develop new type oil / water two - phase flow instrumentation based on this theoretic measurement method will be very applicable and promising

    在此基礎上，針對穩態密度波理論提出了基於密度波理論的油水兩相流測量理論模型，該模型以密度波傳播理論作為基礎，通過上下游傳感器信號相關獲得密度波傳播速度，利用密度波傳播速度與總流量以及持相率的理論關系結合漂移模型來求解總流量和含相率，實現油水兩相流的測量，在理論分析的基礎上，在實驗資料有限的條件下，對基於密度波理論的油水兩相流測量理論模型作了極限的簡化，提出了本文油水兩相流測量理論方法應用在測量均勻油水兩相流中的實用線性模型。
  9. From some characteristics observed, such as the short lift time, narrow frequency band, fast frequency drift, quasi - periodic pulsation, spike event and complex magnetic structure, it is considered that the radiation mechanism of these events may be principally due to the electromagnetic waves magnified directly by the instable electronic cyclotron

    從它們的觀測特徵：短壽命，窄頻帶，頻率快速漂移，及尖峰事件與磁結構復雜的大黑子活動區密切相關等，認為這些事件的輻射機制可能是電子迴旋脈澤不穩定直接放大電磁波所致。
  10. Then the gyro ’ s working theory and cause of drift are summarized

    並對液浮力反饋速率陀螺儀的工作原理和產生漂移的原因進行了概述。
  11. The effect of flexure support to the dtg precision is studied, and the drift equation of dtg is give

    研究了撓性支承特性對動力調諧速率陀螺儀精度的影響，推導了動力調諧速率陀螺儀的漂移公式。
  12. The basic principle, main properties, typical parameters, technical characteristics and general situation of klystron are introduced. the electron beam prebunching in the modulated cavity and shift tube of relativistic klystron amplifer ( rka ) is studied analytically, a self - consistent equation of radiation generated by the prebunched electron beam in the radiation cavity is derived using the field method of particle ? wave interaction instead of the electrical circuit method, and in terms of it, the gain in the linear regime calculated, a field analysis method is proposed. the theory analysis shows that the characteristic parameters, such as resonance frequency, real part of gap - impedance, external quality fadtor in all kinds of klystron output circuits including single - beam, multi - beam, single - gap, multi - gap, single - beammulti - gap, multi - beam multi - gap klystron output circuit, can be calculated by the field analysis method

    本文系統的介紹了速調管的工作原理、主要特點、發展概況、主要性能指標和技術特點，解析的研究了電子束在相對論速調管放大器的調制腔和漂移管中的預群聚;用粒子波互作用的場方法導出了在輻射腔中預群聚電子束產生輻射的自洽方程，同時對線性區的增益進行了計算。理論分析表明，場分析法可用於計算單注單間隙、多注多間隙、單注多間隙和多注多間隙速調管輸出迴路的諧振頻率、間隙阻抗實部和外觀品質因數等特性參數。
  13. And the simulation on the nonlinear beam - wave interaction of two - cavity gyroklystron is made. the influences of the drift length and beam voltage and current and the velocity ratio of the electron beam and et al. on efficiency and gain are analyzed in detail

    並對34ghz兩腔迴旋速調管的注?波互摘要作用進行了大量的數值模擬研究，分析了漂移區長度、電壓、電流、速度lhq值、磁場k ， ； 、注入波功率等多種因素對互作用電子效率及增益的影響。
  14. The optimizing methods of main etching parameters, such as etching rate, uniformity and selectivity, were investigated by the orthogonal experiment, and these results can be used for setting main process parameters, adjusting them with a drifting from desired conditions, and optimizing etching selectivity

    應用正交實驗，進行了蝕刻速率、均勻性、選擇比等主要蝕刻參數的優化，得出主要工藝參數的設置方法和理想條件漂移時的調整方法以及優化選擇比的蝕刻方案。
  15. The phase detecting error caused by local oscillator frequency drift and non - synchronization of measurement signal and gate signal is eliminated and the measurement speed is improved at the same time

    該方法可以有效的消除因本振信號頻率漂移及閘門信號與被測信號的非同步引起的測相誤差，同時提高了測量速度。
  16. Due to its intrinsic merits, such as wide band gap, high electron saturated drift velocity, high melting point, good coefficient of thermal conductivity, anti - radiation and good chemical stability, gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature, high frequency and high power electronic devices

    Gan是直接帶隙半導體材料，以其禁帶寬度大、電子飽和漂移速度大、熔點高、熱導率高、抗輻射能力強和化學穩定性好等優點成為製造短波長光發射器件及高溫、高頻、大功率電子器件的理想材料。
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