禁帶 的英文怎麼說

中文拼音 [jīndài]
禁帶 英文
forbidden band; forbidden zone; stopband
  • 禁 : 禁動詞1. （禁受; 耐） bear; stand; endure 2. （忍住） contain [restrain] oneself
  1. Negative group velocity in the band gap range

    禁帶區域內負的群速度
  2. But the seebeck coefficient was reduced by pd - substituted because of the interdict band width was reduced

    Pd的取代也同時使zrnisn基化合物的禁帶寬度減小，降低了體系的seebeck系數。
  3. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  4. Zinc oxide ( zno ) is an important wide band gap ( eg = 3. 37ev ) semiconductor materials, its exciton binding energy is 60mev. these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature

    氧化鋅（ zno ）是一種重要的寬禁帶（ eg = 3 . 37ev ）半導體材料，其激子束縛能高達60mev ，在室溫紫外光電器件方面有巨大的應用潛力。
  5. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ，激子束縛能為60mev ，具備了室溫下發射紫外光的必要條件，在紫外探測器、 led 、 ld等領域有著巨大的發展潛力； zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。
  6. Silicon and germanium, for instance, have forbidden bands whose widths are 1. 1 and 0. 65ev, respectively.

    例如，硅和鍺的禁帶寬度分別為11電子伏和065電子伏。
  7. Structure of basic period of one - dimensional photonic crystal and the characters of forbidden bands

    一維光子晶體的基本周期結構及其禁帶特徵
  8. Modulation on widening photonic forbidden band of one - dimensional photonic crystal by optical thickness

    光學厚度對一維光子晶體禁帶寬度的調制
  9. Silicon and germanium, for instance, have forbidden bands whose widths are 1. 1 and 0. 65ev, respectively

    例如，硅和鍺的禁帶寬度分別為1 1電子伏和0 65電子伏。
  10. I find it is useful to create photonic crystals with big complete forbidden bands by changing the translational symmetry of the photonic crystal

    我在這篇論文中把破壞簡並製造大的完全禁帶的問題轉化為改變光子晶體平易對成性問題。
  11. For n - doped tio _ ( 2 ), the forbidden band was divided into two ' s, and the cut - off wavelength and the application of solar energy was increased too

    對于n摻雜tio _ 2薄膜來說，禁帶寬度裂分為兩個「表觀」禁帶寬度，大大提高了截止波長，提高了對光源的利用率。
  12. In the reflected wave, the reflectivity of forbidden band lowers quickly with the extinction coefficient increment, when the extinction coefficient increases to 0. 05, there is already no obvious photonic bandgap

    得出：在反射波中，禁帶的反射率隨消光系數的增加而迅速降低，當消光系數增加到0 . 05時，已經不存在明顯的能帶。
  13. Although nearly a few months come, the bounds of lift a ban makes work current an amount and market prise are in growth, but the market was not experienced immediately apparently be restricted to make work current a pressure that sees forbidden band come in succession

    盡管近幾個月來解禁的限售流通股數量和市值在增長，但市場顯然並未馬上感受到限售流通股陸續解禁帶來的壓力。
  14. The result shows that the pbg structure has obvious character of forbidden band at the suitable size, and can be designed to good performance microwave filter. the pbg structure have the character of high resistance, that can reinforce the forward radiation, and reduce the backward radiation, increase the directivity, improve the gain and ameliorate the performance of the antenna. in addition, the pbg structure can also greatly increase the isolation and significantly decrease the coupling between the antenna elements

    研究結果表面，取合適的尺寸時， pbg結構具有明顯的禁帶特性，可以設計成性能良好的微波濾波器； pbg結構具有高阻特性，把這種特性用於微波天線時， pbg結構可以加強前向輻射，減小後向輻射，增大天線的方向性系數，從而提高天線的增益，改善天線的性能，另外， pbg結構還可以大大提高天線單元之間的隔離度，顯著減小天線單元間的耦合。
  15. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。
  16. Abstract : we have studied the spontaneous emission from a three - level atom with an external - driving field in a photonic crystal. as a result of quantum interference and photon localization, the population in the two upper levels displays quasi - oscillatory oroscillatory behavior. this depends on the initial atomic state and the relative positions of the two upper levels from the forbidden gap. the intensity and the phase of the external field can affect spontaneous emission from the atom. the properties are different from a three - level atom either in vacuum or in aphotonic crystal without an external driving field

    文摘:討論了在雙光子驅動場作用下，三能級原子在光子晶體中的自發發射問題.由於量子干涉和光的局域化作用，兩個上能級中的占據數將具有周期振蕩或準周期振蕩的性質，這不僅依賴于兩個上能級與禁帶的相對位置，同時也依賴于原子的初始狀態，而且還與驅動場的強度、驅動場的入射位相有關.這些性質既與真空中帶有驅動場的原子的自發發射性質不同，也有別于無驅動場作用下光子晶體中三能級原子的自發發射性質
  17. Such control can be realized in case where a atom interact with photonic band gap matericals when the atom is placed in photonic crystals whose density of modes is dramatically different from that of free space vacuum. it was known that control could be achieved by varying the frequency ( which leads to the changes of the relative position of the upper levels from the forbidden gap ) or by varying the photonic density of modes ( dos ) or by varying the intial atomic state

    由於光子晶體具有不同於真空中的光子態密度，原子和光子帶隙材料便發生相互作用，這樣便可以控制原子的自發輻射。改變原子上能級與光子禁帶邊緣的相對位置、材料中的光子態密度或原子初態都可以控制原子的自發輻射。
  18. These problems boost the study of high - k materials as the alternatives of sio2 gate dielectrics. among all high - k gate dielectric materials, hafnium oxide ( hfo2 ) is being extensively investigated as one of the most promising candidate materials due to its superior thermal stability with poly - si, biggish constant and reasonable band alignment. our researches focus on hfo2 dielectrics

    高k柵介質材料已經被廣泛地研究來替代sio _ 2 ，以降低柵泄漏電流和改善可靠性，其中， hfo _ 2由於其較大的介電常數、較大的禁帶寬度、與si的導帶和價帶較大的偏置、以及與si的高的熱力學穩定性等特徵，被認為是最有希望的替代sio _ 2的柵介質材料之一。
  19. Zno is a directed band semiconductor with a big binding energy. it has gained substantial interest because its large exiton binding energy ( 60mev ), which could lead to lasing action based exiton recombination even above room temperature, such as led, ld and so on

    Zno是一種寬禁帶的直接帶隙半導體材料，具有非常高的激子束縛能（ 60mv ） ，即使在室溫條件下激子也不會分解，因此可以被用作光發射器件，如led和ld等。
  20. Be restricted to make work oneself current since lift a ban, be restricted to make work current partner is covered on 2 class market those who show is not much, major investor thinks, appear on the market in great majority the company accuses a partner to look, controlling right is the most important right, won ' t be abandoned easily, and divide the arrangement with current time group by group also won ' t be opposite inside short time the market causes impact, the market can be admitted completely " small blame " the enlarge that lift a ban brings allows pressure

    自限售流通股解禁以來，限售流通股股東在二級市場上套現的並不多，大部分投資者認為，在絕大多數上市公司控股股東看來，控制權是最重要的權利，不會被輕易放棄，並且分批分時間流通的安排也不會在短時間內對市場造成沖擊，市場完全可以接納「小非」解禁帶來的擴容壓力。
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