耗盡型 的英文怎麼說

中文拼音 [hàojìnxíng]
耗盡型 英文
d most
  • 耗 : Ⅰ動1 （減損; 消耗） consume; cost 2 [方言] （拖延） waste time; dawdle Ⅱ名詞1 （壞的音信或消息） ...
  • 盡 : 盡Ⅰ副詞1 （盡量） to the greatest extent 2 （用在表示方位的詞前面 跟「最」相同） at the furthest ...
  • 耗盡 : exhaust; use up; deplete; exhaustion; depletion; consumption; burning up; impoverishment
  1. Influences of the parameters on device performance such as thickness of strained si, ge content, channel doping and thickness of buried oxide are discussed based on given models. the models could be very helpful for device design

    根據所建立的模型，針對硅膜厚度、 ge組分、摻雜濃度和埋氧層厚度等參量對薄膜全耗盡型strained - soimosfet器件性能的影響進行詳細討論，為器件結構設計提供了理論基礎。
  2. This thesis regard internal property reorganization in the group of pangang as the research object, from chengdu seamless steel pipe limited liability company with chengdu iron and steel works inside exterior environment reorganizing in front and back commences, making use of to exceed the makel - bot with of five factors competition models and the method of factors analysis, after analyzing the reorganization of the business enterprise a profession for facing competes the situation. develop the development the business enterprise with the profession industry from the international local profession rival circumstance after analyzing the reorganization should the market position of the establishment with develop the strategy target. make use of the swot the analysis the method, to after the reorganization the development strategy of the business enterprise, from manage the angle proceeded the fixed position analyzes, for after the reorganization business enterprise development provided four kinds of developments strategy that eligibility choose : the brave development strategy, request the resources advantage, funds advantage, human resource advantage, technique advantage that new company make the most of new business enterprise in empress in reorganization, is an essential condition to increases to manage the level, quickly technique reforms, develop the high and additional worth product with new product production line, as soon as quikly change to strong and large business enterprise, realizes soon steel aircraft carrier dream ; dispersion strategy, the technology market quota with deal with produce high additional worth product, completely promote business enterprise brand image, extend high carry product of the exaltation product, is a necessary means to increases business enterprise performance, realizes business enterprise target ; defense strategy, adjusting the business enterprise organizes construction, reducing the intensive type in labor and the low additional worth product line, lower bad the property saves the deal, alleviating the business enterprise burden, attaining the casual wear go to battle, benefitting to the challenge that make frontal attack the rival ; withdraw strategy, compress the production of the high depletion and high cost product, simplify the production craft, controlling the cost of the end product in the lower level, is a valid path to increases business enterprise competition ability

    本論文以攀鋼集團內部的資產重組為研究對象，從成都無縫鋼管有限責任公司與成都鋼鐵廠重組前後的內外部環境入手，運用邁克爾?波特的五力競爭模型及因素分析法，分析了重組后的企業所面臨的行業競爭態勢。從國際國內行業競爭對手情況和本行業發展動態分析了重組后企業應確立的市場地位和發展戰略目標。運用swot分析法，對重組后企業的發展戰略，從管理角度進行了定位分析，為重組后企業發展提供了可選擇的四種發展戰略：即大膽發展戰略，要求新公司充分運用重組后新企業的資源優勢，資金優勢，人力資源優勢，技術優勢，是提高管理水平，加快技術改造，開發高附加值產品和新產品生產線，盡快立於強勢企業之林，早日實現「鋼鐵航母」夢的必要條件；分散性戰略，提高產品的科技含量和生產高附加值的產品，全面提升企業品牌形象，擴大高端產品的市場份額，是提高企業效益，實現企業目標的必要手段；防禦性戰略，調整企業組織結構，削減勞動密集型和低附加值產品生產線，降低不良資產存量，減輕企業包袱，做到輕裝上陣，有利於迎擊競爭對手的挑戰；退出性戰略，壓縮高消耗、高成本產品的生產，降低低端產品的比例，精簡生產工藝，將最終產品的成本控制在較低水平，是提高企業競爭力的有效途徑。
  3. Because a large file will use up all your memory

    ）中讀取整個文件時要小心，因為大型文件將耗盡所有內存。
  4. Abstract : a new approach, gate - capacitance - shift ( gcs ) approach, is described for compact modeling. this approach is piecewise for various physical effects and comprises the gate - bias - dependent nature of corrections in the nanoscale regime. additionally, an approximate - analytical solution to the quantum mechanical ( qm ) effects in polysilicon ( poly ) - gates is obtained based on the density gradient model. it is then combined with the gcs approach to develop a compact model for these effects. the model results tally well with numerical simulation. both the model results and simulation results indicate that the qm effects in poly - gates of nanoscale mosfets are non - negligible and have an opposite influence on the device characteristics as the poly - depletion ( pd ) effects do

    文摘:提出了一種新的建立集約模型的方法，即柵電容修正法.此方法考慮了新型效應對柵電壓的依賴關系，且可以對各種效應相對獨立地建模並分別嵌入模型中.另外，利用該方法和密度梯度模型建立了一個多晶區內量子效應的集約模型.該模型與數值模擬結果吻合.模型結果和模擬結果均表明，多晶區內的量子效應不可忽略，且它對器件特性的影響與多晶耗盡效應相反
  5. Channel depletion mode junction

    溝道耗盡型結
  6. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs146

    半導體分立器件. cs146型硅n溝道耗盡型場效應晶體管.詳細規范
  7. Semiconductor discrete device. detail specification for type cs141 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs141型硅n溝道mos耗盡型場效應晶體管詳細規范
  8. Semiconductor discrete device. detail specification for type cs140 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs140型硅n溝道mos耗盡型場效應晶體管.詳細規范
  9. Semiconductor discrete device. detail specification for type cs5114 cs5116 silicon p - channel deplition mode field - effect transistor

    半導體分立器件. cs5114 cs5116型硅p溝道耗盡型場效應晶體管詳細規范
  10. Semiconductor discrete device. detail specification for type cs4091 cs4093 silicon n - channel deplition mode field - effect transistor

    半導體分立器件. cs4091 cs4093型硅n溝道耗盡型場效應晶體管詳細規范
  11. Semiconductor discrete device. detail specification for types cs4856 cs4861 silicon n - channel deplition mode field - effect transistor

    半導體分立器件. cs4856 cs4861型硅n溝道耗盡型場效應晶體管詳細規范
  12. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs1 gp, gt and gct classes

    半導體分立器件gp gt和gct級cs1型硅n溝道耗盡型場效應晶體管.詳細規范
  13. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs4. gp, gt and gct classes

    半導體分立器件gp gt和gct級cs4型硅n溝道耗盡型場效應晶體管.詳細規范
  14. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs10. gp, gt and gct classes

    半導體分立器件gp gt和gct級cs10型硅n溝道耗盡型場效應晶體管.詳細規范
  15. The equipment must be compact in size and low in power consumption, and able to adapt to various power supply conditions

    設備體積必須小型化。電源消耗盡可能低，能適應多種供電條件。
  16. Put size safeguards on database queries to help guard against large queries using up system resources

    對數據庫查詢設置大小保護措施，以防止大型查詢耗盡系統資源。
  17. The combination of high gear ratio and long stroke can drain an entire air system unless the air supply system is specially designed to accommodate this type of actuator

    除非氣源供應系統是經過特殊配置，以滿足這種類型執行機構的要求，或者高齒輪傳速比和長沖程的組合可能會耗盡整個氣源系統。
  18. The optical effect on the uniformity of mesfet threshold voltage is studied. results show that optical radiation enhances the drain - source current of the gaas mesfet, and makes the threshold voltage to move toward negative direction. optical radiation enhances the uniformity of mesfet threshold voltage

    本文研究了光照對閾值電壓均勻性的影響，觀察到在光照條件下，耗盡型mesfet的溝道電流增加，閾值電壓向負方向增加，光照提高了閾值電壓的均勻性。
  19. Physics device model, component structure design and fabrication technology are discussed based on the thorough analysis of strained silicon and soi physics mechanism. the detail contents are as follows. the analytical threshold voltage model, drain current model and transconductance model are derived from poisson ’ s equation for the fully depleted strained soi mosfet

    本論文圍繞這一微電子領域發展的前沿課題，在深入分析應變硅和soi物理機理的基礎上，對器件的物理模型、器件結構設計和工藝實驗等問題作了研究，主要包括以下幾部分:首先，從器件的物理機制出發，建立主要針對薄膜全耗盡型器件的閾值電壓、輸出電流和跨導模型。
  20. In the high frequency c - v experiments, the large flat - band shift in sio2 / p - sic indicated that there was high density of deep interface states. the deep interface states were simply studied by using photo excitation

    在無光照條件下，比較了n型和p型sicmos的不同特點，對其深耗盡特徵和p型sicmos的平帶電壓作了討論和解釋。
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