薄膜內襯 的英文怎麼說

中文拼音 [bómónèichèn]
薄膜內襯 英文
film liner
  • 薄 : 名詞[方言] （浮萍） duckweed
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 內 : 名詞1. （內部; 里頭; 里邊） inner; inside; within 2. （妻子或妻子的親屬） one's wife or her relatives 3. （姓氏） a surname
  • 襯 : Ⅰ動詞1 （在裏面托上一層） line; place sth underneath 2 （陪襯; 襯托） set off Ⅱ名詞（襯在裏面的附...
  • 薄膜 : thin film; film; diaphragm
  1. Moke and fmr studies were performed on epitaxial single crystalline fe ph. d thesis ; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ). the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy, and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films. it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed

    對于外延生長在inas襯底上、厚度為8 - 25ml的超薄fe單晶膜進行了鐵磁共振和磁光研究，獲得以下幾點結果： （ 1 ）膜厚在8 - 25ml之間時，薄膜面內的磁晶各向異性為四度對稱各向異性，垂直單軸各向異性比同厚度的fe gaas系統小許多，而立方各向異性則比fe gaas系統更接近bcc結構的fe 。
  2. Typical differences between the indices of the film and the substrate range from to.

    薄膜和襯底的折射率之間的典型的差值分佈在到的范圍內。
  3. The water - proof and drainage system within the tunnel has adopted the comprehensive treatment project of the combined linings and setting the pvc pellicle in the middle, the connection of the longitudinal, loop pipes and the rubber - sealing belt

    洞內防排水採用復合式襯砌中間設聚氯乙烯薄膜結合縱向、環向盲管及橡膠止水帶的綜合治理方案。
  4. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  5. General purpose ldpe film modifier ： degradable garbage bags which generate less heat, flat yarn, inner film for laminated

    Ldpe膜泛用型改質劑：如發熱量低之環保垃圾袋、薄膜扁紗、包裝膜內襯膜、購物袋及膠布等。
  6. The gas sources that we used are trimethylgallium ( tmg ) and 99. 9999 % purity nitrogen, which were fed into reaction chamber and resonance cavity respectively. the highly dense ecr plasma up to 1011cm - 3 was created in the resonance cavity and introduced to the next reaction chamber by the force of divergent magnetic field. consequently, gan thin film was grew on the substrate sapphire ( 0001 ) placed in the downstream

    實驗採用有機金屬三甲基鎵氣源（ tmg ）和99 . 9999純度的氮氣，在ecr - pecvd150裝置共振腔內電子迴旋共振吸收微波能量產生的高密度ecr等離子體在磁場梯度和等離子體密度梯度的作用下向下級反應室擴散，在放置於下游區樣品臺上的- al _ 2o _ 3襯底表面附近發生物理化學反應沉積成gan薄膜。
  7. It was found from the experiment that, with the increasing of substrate temperature, there were more oxygen vacancies in the films, which lead the conductance of the sample become larger, and the absorb edge of ito thin films shifted toward lower wavelength ; with increasing of ar : o2 ratio, there were lesser oxygen vacancies in the films, which lead the absorb edge of ito thin films shifted toward lower wavelength

    實驗還發現，在一定的溫度范圍內隨著襯底溫度的升高，薄膜中產生的氧空位將會增多，使得ito薄膜的電導逐漸增大，而且其紫外透射吸收截止邊帶向短波長方向漂移；隨著氬氧比例的增加，薄膜中的氧缺陷相對減少，薄膜的透射吸收截止邊向低波長方向漂移。
  8. Ternary compound bnxpi - x films of quality are deposited and the ultraviolet absorbance characteristics of bnxp, - x films were investigated in the thesis, too. with the quantity of phosphorus dopant, the optical bandgap modulation of bnxpi is achieved successfully. in addition, the combined intensity of bnxp, - x films and substrates was enhanced by depositing the buffer layer

    實驗採用磷對氮化硼進行摻雜，成功地在光學石英玻璃襯底上沉積了磷摻雜氮化硼（ bn _ xp _ （ 1 - x ） ）薄膜，研究了該薄膜的紫外光敏特性，其吸收邊在240nm 400nm的紫外波段內可以連續變化，同時也實現了對氮化硼光學帶隙在3 . 8ev 5 . 3ev范圍內的連續可控調制。
  9. Pe film dry - bulk container liners

    薄膜集裝箱內襯袋
  10. 50kg packed in a plastic bags lined plastic film or can be packed on request

    1000公斤裝入內襯塑料薄膜的塑料編織袋，或按要求包裝。
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