質譜本底 的英文怎麼說
中文拼音 [zhípǔběnde]
質譜本底
英文
background of mass spectrum-
Background mass spectrum
本底質譜圖By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly
本文利用mocvd技術，採用各種對si襯底處理的方法，如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究，通過x射線衍射技術（ xrd ） 、光致發光技術（ pl ） 、掃描電子顯微術（ sem ） 、透射電子顯微術（ tem ）等檢測，並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析，發現外延晶體的生長質量得到了明顯提高。From the result of electrophoresis, it known that the different components of the enzyme system were expressed cooperatively. in order to study the essence of cellualase induction of different carbon sources, the extracellular, plasm - membrane - bound and intracellular cellulases were made to transform different soluble inducers, and the productions were analyzed by gc chromatogram. the results supported the assumption that cellobiose acted as the direct inducer or the metabolic analogue, b - gentiobiose from cellobiose acted as the true inducer through different metabolism ways in different strains
制備細胞膜外、細胞膜、細胞內纖維素酶，用定位於這三部位的纖維素酶分別轉化底物，然後進行氣相色譜定性分析，從而探討了不同碳源之間的誘導本質，結果認為不可溶的胞外纖維素以纖維二糖為橋梁，遵循不同的代謝途徑，直接或間接地誘導了兩株不同真菌纖維素酶的合成。In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process. the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ), x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy
本論文提出了在藍寶石上引入一層緩沖層材料形成復合襯底，採用常壓化學氣相淀積（ apcvd ）方法在其上異質外延生長sic薄膜的技術，分析了cvd法生長sic的物理化學過程，通過實驗提出sic薄膜生長的工藝條件，並通過x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、光致發光譜（ pl譜）和掃描電鏡（ sem ）對外延薄膜的結構性質進行分析。分享友人