邊頻放大器 的英文怎麼說
中文拼音 [biānbīnfàngdàqì]
邊頻放大器
英文
marginal amplifier- 邊 : 邊Ⅰ名詞1 （幾何圖形上夾成角的直線或圍成多邊形的線段） side; section 2 （邊緣） edge; margin; oute...
- 頻 : Ⅰ形容詞（次數多） frequent Ⅱ副詞（屢次） frequently; repeatedly Ⅲ名詞1 [物理學] （物體每秒鐘振動...
- 放 : releaseset freelet go
- 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
- 邊頻 : boundary frequency
- 放大器 : amplifier; pantograph; lawnmower; enlarger; magnifier
- 放大 : amplify; magnify; boost; enlarge; blow up; gain; amplification; enhancement; multiplication; magn...
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The second, at the high frequency primary coil, when switch turn on with control signal ( the spwm pulse is modulated ), in the positive or negative semi - period of low frequency modulation signal, transformer coil with same direction voltage. the magnetic flux of transformer core will increase step by step. at the end, it leads to magnetic flux saturation
二、在高頻變壓器原邊，當開關管接收控制信號脈沖列（經調制的spwm波列）導通時，在低頻調制信號的正半周或負半周內，施加在變壓器繞組上的是同一方向的電壓，變壓器磁芯中的磁通可能將級進地逐漸增加，導致磁芯飽和，造成磁偏或單向磁化，導致低頻電信號放大失真或由於很大的磁化電流而無法正常工作。Theoretical analysis and simulation results demonstrate that asymmetries in lower and upper sidebands and imd magnitude variation depending on envelope frequency and junction temperature can appear, these results are in accordance with measurement results, and show that electrical and thermal memory effects exist
理論分析和模擬結果表明功率放大器上下邊帶不平衡和互調失真幅度依賴于包絡頻率和結溫，結果和測量的結果是一致的，說明存在電和熱記憶效應。At present the manufacture of surface acoustic wave use the technology of the final submicron. a series of the devices of low insertion loss, high q saw rayleigh surface acoustic wave resonators or stws that insertion loss has less than 5db, load quality factor ( ql ) is more than 1000 on the quartz piezoelectric with zero of first temperature factor in the research. these difference frequencies are 60mhz, 280mhz, 739mhz and 1ghz of normal frequency and at also surface acoustic wave. using 1. 25db noise factor amplifier, careful design curcuit, good setting printed curcuit board, and using the 1ghz surface transverse wave resonator as frequency element, researching the low phase noise surface acoustic wave with sideband phase noise near ? 120dbc / hz deviating 1khz on carrier, spurious suppress with 80db
本研究採用一階溫度系數為零的壓電石英基片上製作出損耗小於5db 、有載品值因素（ ql值）超過1000的一系列低損耗、高q值聲表面波rayleigh波或stw諧振器，頻率分別為60mhz 、 280mhz 、 739mhz和1ghz等不同頻率的高性能聲表面波諧振器。並採用噪聲系數為1 . 25db的低噪聲系數放大器，精心設計電路，優化設計布置印製電路板，用標稱頻率為1ghz的聲表面波諧振器為頻率控制元件，製作出在偏離載頻1khz處的單邊帶相位噪聲近- 120dbc / hz 、雜波抑制達80db以上的低相位噪聲聲表面波振蕩器。There are three power transistor which have been widely used in s band now : bipolar junction transistor ( bjt ), gaas metal - oxide semiconductor field effect transistor ( gaas mosfet ) and lateral diffuse metal - oxide semiconductor field effect transistor ( ldmos fet ). thanks to the advantages, such as, wide frequency, easy power supply, good stability, the ldmos fet has used in the motion telecommunication
目前在s波段人們常用的放大器有雙極性晶體管（ bjt ） 、砷化鎵場效應晶體管（ gaasmosfet ） 、邊緣擴散場效應晶體管（ ldmosfet ）等，由於ldmosfet具有頻帶寬、供電方便、穩定可靠等優勢，目前已經廣泛用於移動通信3g的研究。分享友人