電介質材料 的英文怎麼說

中文拼音 [diànjièzhícáiliào]
電介質材料 英文
dielectric material
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 材 : 名詞1 （木料） timber 2 （泛指可以直接製成成品的東西; 材料） material 3 （供寫作或參考的資料） ma...
  • 料 : 名詞1 （材料; 原料） material; stuff 2 （喂牲口用的穀物） feed; fodder 3 （料器） glassware 4 （...
  • 材料 : 1. （原料） material 2. （資料） data; material 3. （適于做某種事的人才） makings; stuff
  1. These precursors polymerize to form polyamic acid ( paa ). the paa reacts with metal film such as copper. thus its character become worse and circuit resistance increases

    電子科技大學博士學位論文聚酚亞胺（ pi ）是薄膜多層布線的重要介質材料，它是由兩種單體在熱處理后聚合而成。
  2. Because of the restriction of the performances of the infrared materials, we decide that the hollow waveguide should have the structure of single layer dielectric coated metallic film according to the general analysis of process controllability and transmission capability. the dielectric we choose is silver iodide, made from silver and iodine, and the optimum thickness is about 0. 77um

    因材料性能的限制，通過傳輸性能以及工藝可控性綜合分析，確定製備的空芯光纖為單層電介質塗覆金屬膜結構，電介質膜定為碘化銀，理論厚度為0 . 77 m左右，由銀膜直接碘化得到。
  3. Fitting the experimental data into the general effective media ( gem ) equation, a theoretical percolation curve was gained. a mathematical model was proposed which is based on the gem equation and the dilution effect of filler volume fraction due to thermal volume expansion

    使用有效介質普適方程（ gem方程）對實驗數據進行擬合，得到導電復合材料的理論滲流曲線，根據gem方程和基體的體積膨脹，建立起一個數學模型。
  4. Research progress in electrical properties of high - k hfo2 gate dielectric films

    2柵介質材料電學特性的研究進展
  5. These problems boost the study of high - k materials as the alternatives of sio2 gate dielectrics. among all high - k gate dielectric materials, hafnium oxide ( hfo2 ) is being extensively investigated as one of the most promising candidate materials due to its superior thermal stability with poly - si, biggish constant and reasonable band alignment. our researches focus on hfo2 dielectrics

    高k柵介質材料已經被廣泛地研究來替代sio _ 2 ，以降低柵泄漏電流和改善可靠性，其中， hfo _ 2由於其較大的介電常數、較大的禁帶寬度、與si的導帶和價帶較大的偏置、以及與si的高的熱力學穩定性等特徵，被認為是最有希望的替代sio _ 2的柵介質材料之一。
  6. Test method for evaluation of resistance to electrical breakdown by treeing in solid dielectric materials using diverging fields

    應用相異場評估固體介質材料電擊穿電阻的試驗方法
  7. The ctc series chip capacitor has much lower esr and esl than most leaded type capacitor and lts lower dissipation factor leads to lower power is wasted than aluminum electrolytic and tantalum capacitors

    Ctc系列電介質材料有： npo ， x7r ， y5v ， z5u ctc系列與大多數引線電容相比有更低的esr和esl ，低損耗特性使它比鋁電解電容和鉭電容更省電。
  8. In this dissertation, the performance of linearly tapered fin - fed slot antenna ( lwsa ) is discussed in theory, simulation and experiment. the radiation pattern characteristic influenced by changes of antenna ’ s dielectric material, tapered shape and dimension is studied detailedly. though the tapered slot antenna design is very important, a good waveguide - to - finline taper transitions is also needed because they could not thought over separately

    本文主要採用理論分析、數值模擬和實驗等手段對線性漸變槽天線的特性進行了研究，分析了介質材料、天線漸變段以及天線尺寸對天線方向圖的影響，分別設計了天線罩、線性漸變槽天線以及天線的饋電結構。
  9. Through power transmission, prism refraction and beam shifting experiments, various electromagnetic characteristics, such as refractive index, loss and s parameters, and various shaped left - handed material samples could be measured and verified between each other. 2. the beam shifting experiment is designed and realized to further verify the lh properties

    通過功率透射、棱鏡折射和波束位移三種實驗平臺，可以對多種形狀的異向介質材料的折射率、損耗等電磁特性進行準確的測量和相互驗證； 2 、提出了波束位移實驗以進一步驗證介質材料的特性。
  10. Ceramic dielectric materials used for capacitors

    電容器用陶瓷介質材料
  11. But for some special medium materials, such as liquid crystal display controller pcb, magnifiers must be used to gather images to gain enough precision of inspection for the weak contrast between the basic board and the conductor. the images near the light axes are much cleared than that far away from the light axes, so the images can not be simply segmented by black and white and inspected with the methods of pcb which are based on the black white image

    但對於一些特殊介質材料，如液晶顯示控制電路板的檢測，由於基板和導體之間對比度不大，而且為了達到檢測精度，必須採用放大鏡頭進行圖像採集，成像系統光軸附近的圖像成像質量較好，而偏離光軸較遠的圖像質量較差。不能通過簡單二值化來很好地分割圖像，而已有的印刷電路板檢測方法都是建立在二值圖像進行分析的基礎上。
  12. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  13. The thesis mainly investigated the bati _ 4o _ 9 ( bt _ 4 ), which has the lowest dielectric loss in ba - ti system, and ( ba, sr ) tio _ 3, the a position substitute compound of batio _ 3. the dielectric properties of bt _ 4 / bst with different preparation way and different elements doping were investigated. a archimedes method, xrd, sem, impedance analyzer, network analyzer and hakki - coleman method were used to investigate the density, phase formation, microstructure, dielectric properties and doping mechanisms

    本論文以在ba - ti系中具有最低介電損耗的bati _ 4o _ 9 （ bt _ 4 ）高頻介質陶瓷和batio _ 3a位sr取代而得的（ ba ， sr ） tio _ 3 （ bst ）高頻介質陶瓷作為研究對象，對不同粉體制備方法制備的bt _ 4 / bst高頻電介質材料進行不同元素的摻雜，運用阿基米德方法， x射線衍射分析儀，掃描電子顯微鏡和阻抗分析儀，網路分析儀， hakki - coleman法等方法手段和測試儀器測試燒成樣品的密度，相組成情況，微觀結構和介電性能，探討造成介電性能起伏的形成機理。
  14. With the development and application of the microwave communication system 、 precision guided technologies and electronic countermeasure etc, the research on dielectric materials such as circuit dielectric substrate 、 antenna unit dielectric substrate and radome are paid more and more attention

    隨著毫米波通信系統、精確制導、電子對抗等技術的發展和應用，對電路介質基片、天線單元介質襯底、天線罩等介質材料的研究越來越受到重視。
  15. Test method for complex permittivity of solid dielectric materials at millimeter wave frequencies using " quasi - optic cavity " technique

    毫米波頻段固體電介質材料介電特性測試方法準光腔法
  16. The development of filters, resonators and other telecommunication technology required better dielectric materials. the dielectric materials, used as the resonate body, should be high in dielectric constant, low in dielectric loss and a near zero temperature coefficient of dielectric constant in high frequency band, also could be sintered in a relative low temperature so as to reduce production cost, and what ’ s more, the miniaturization and reliability of materials are also the main aspects in the research work of high frequency band dielectric materials

    隨著濾波器、諧振器等器件以及通信技術的發展，人們對電介質材料的要求越來越高，要求作為介質諧振腔的電介質材料在高頻段下具有高介電常數，低介電損耗，接近於零的介電常數溫度系數，還要求高頻電介質材料能夠在較低的燒結溫度下燒成，以降低實際生產的成本，此外，材料的小型化，高可靠性也是高技術高頻介質材料的重要研究方向。
  17. Measurement of complex permittivity of dielectric materials at microwave frequencies

    微波電介質材料復介電常數的掃頻測量
  18. According to secondary electron emission avalanche ( seea ) theory, the effects of insulating materials, shapes, electrode structures of vacuum insulator on surface flashover and its mechanism, design optimization methods for vacuum insulator to improve surface flashover voltage by selecting insulating material, shape and electrode structure are reviewed

    摘要根據二次電子發射崩（ seea ）理論，綜述了真空絕緣子的絕緣介質材料、幾何形狀和電極結構對絕緣子沿面閃絡的影響和機理過程，以及從這三方面優化設計真空絕緣子以提高其沿面閃絡電壓的方法。
  19. As a class of material with special appearance, thin film has particular optical, mechanical, electroniccal and magnetical properties, and was used as the basic material in many new application fields, such as microelectronics, optoelectronics, magnetoelectrics, overhardening of cutting tools, sensors and the application of solar energy, etc. as a prospective dielectric material, tio _ ( 2 ) thin film was used in thin film technique, which brings a great interest to the researchers of all over the world

    作為特殊形態材料的薄膜，具有特殊的光、機、電、磁等性能，已經成為微電子學、光電子學、磁電子學、刀具超硬化、傳感器和太陽能利用等新型應用領域的材料基礎。 tio _ 2作為一種極具前景的介質材料被應用到薄膜技術中來，引起了國內外研究者的極大興趣。
  20. Tio _ 2 has been known as an n - type metal oxide semiconductor and an important inorganic function material. it can be used in fabricating medium material, photocatalytic films, reducing reflect coat, gas sensor, etc. tio _ 2 films had excellent performance with photocatalysis, resisting photo erode, difficult dissolution in acidity condition, innocuity and stabilization in light and soon on

    Tio _ 2是n型金屬氧化物半導體，是一種重要的無機功能材料，可用於製作電介質材料、光催化薄膜、減反射塗層、氣敏傳感器等。 tio _ 2薄膜具有優異的光催化性能，抗光腐蝕，在酸性條件下難溶，對光穩定，無毒等。
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