電位移密度 的英文怎麼說

中文拼音 [diànwèiyímìdù]
電位移密度 英文
electric displacement density
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 位 : Ⅰ名詞1 （所在或所佔的地方） place; location 2 （職位; 地位） position; post; status 3 （特指皇帝...
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 密 : Ⅰ名詞1 （秘密） secret 2 [紡織] （密度） density 3 （姓氏） a surname Ⅱ形容詞1 （距離近; 空隙小）...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  1. The subject of this thesis is to study ironless moving coil linear permanent magnet synchronous motor and the major works in this thesis are summarized as follows : 1 ) two analytical formulas are derived by concentrated current method and distributed current method to determine the magnetic field due to pm, based on the current model of pm. besides, two method ( magnetic charge method and solution by laplace equation method ) are also introduced with comparing their advantages and disadvantages. then the effects of the motor parameters on the flux distribution are discussed

    本文對空芯動圈式直線同步電動機進行了深入細致的研究，內容包括： （ 1 ）採用電流模型推導出兩種計算永磁磁極二維氣隙磁場的解析公式（集中電流法、分佈電流法） ，同時介紹了兩種永磁電機氣隙磁場計算方法（磁荷法，直接求解拉氏方程法） ，分析各種方法的優缺點，討論電機參數對氣隙磁密的影響； （ 2 ）介紹了單層同心繞組的布置方式，根據安培定律推導出空芯動圈式直線永磁同步電動機的靜推力計算公式，分析靜態力?位移特性； （ 3 ）建立空芯動圈式直線永磁同步電動機動態模擬模型，模擬不同驅動方式下電動機起動、穩態運行時電磁力、速度、位移的變化情況。
  2. In the third chapter, the influence of current density, solution concentration, erosion time and aging in ambient air on the pl spectra of ps suggests that peak would blue shift with current density increasing, and with erosion time and aging time prolonging ; with the increasing of solution concentration, peaks would red shift when solution concentration less than 1 : 1 but blue shift when solution concentration greater than 1 : 1. above phenomena can be explained by quantum confinement and light center model, but do not deny the action of si - h bonding and defect on the surface in the process of photoluminescence. at present, radiation mechanism is still one of the primary problems in the study of ps

    在第z三章中；通過對比，分析了電流密度、陽極化時間、溶液濃度以及自i然氧化時間對多孔硅光致發光光譜的影響，認為在一定的范圍內，多i孔硅的發光峰位會隨電流密度的增大而藍移，要獲得較強的發光，需z要選擇合適的電流密度；隨著腐蝕時間的延長，多孔硅的發光峰位會i發生藍移；當f酸的濃度較小q ： 1 ）時，峰位隨濃度的增大表現為向i低能移動；而當f酸的濃度較大河山時，峰位隨濃度的增大則表現z為移向高能；多孔硅在空氣中自然氧化；其發光峰位發生藍移，而強i度隨放置時間的延長而降低。
  3. First, based on the analysis of the design method of two - valued shift counter, we use the multivaled circuit ' s property of high information density to put forward the design method of three - valued shift counter. by using this method module - n three - valued shift counter can be designed. and by selecting the best design method, the simplest circuit of control logic can be made

    首先，在分析二值的移位計數器的設計方法的基礎上，利用多值電路的高信息密度，提出了三值移位計數器的設計，運用該方法可以設計任意狀態的三值移位計數器，並且通過選擇最佳設計方案使控制邏輯電路最簡。
  4. The optimal cp potential shifted to negative direction in seamud containing active srb, - 1030 mv ( vs. saturated cu / cuso4 electrode, cse ) or lower potential was needed. accordingly, the cp current density was about 11 ma / m2

    在srb存在下，最佳陰極保護電位移向更負的值， - 1030mv （相對銅/硫酸銅電極， cse ）甚至更低的電位是需要的。在- 1030mvcse保護電位下，保護電流密度約為11ma / m2 。
  5. The corrosion potential was the biggest and the corrosion current was the smallest one when the concentration of super - 3900 was 0. 5 % ; the corrosion potential was increased with the addition of mps - dl, but the smallest corrosion current is under 0. 01 % mps - dl. the rust time was the longest one when the concentration of super - 3900 was 0. 5 % as well as mps - dl was 0. 01 %. it was increased as a peak curve with al2o3 concentration in plating solution and ph value increased gradually with cathodic current density ; the corrosion weight

    通過測量tafel曲線可知，在super - 3900濃度為0 . 5 % （相對于鍍液的體積百分含量）時獲得的鍍層腐蝕電位最正，腐蝕電流密度最小;隨著鍍液中mps - dl含量的增加，獲得的鍍層的腐蝕電位逐漸正移，在濃度為0 . 01 % （相對于鍍液的體積百分含量）時腐蝕電流密度最小。
  6. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  7. This dessertation systematically researched dislocation and ab microdefects etched by molten koh and by ab etching respectively in gaas substrate, which were provided by merchants from home and overseas, as well as their influence on electrical parameters

    本文系統地研究了國內外各生產廠家提供的gaas襯底中用熔融koh腐蝕的位錯、 ab腐蝕液腐蝕出的ab微缺陷的密度和分佈情況以及它們對襯底電參數（電阻率、遷移率、載流子濃度）的影響。
  8. But the comprehensive properties were improved remarkably. with the addition of carbon nanotubes, the polarization of charging process decreased, the plateau of discharge became flatter and the migration of potential of peaks value of cyclic voltemmograms reduced. for the other hand, the exchange current increased, ohm resistance and electrochemical reaction resistance of the electrodes decreased, the diffusion resistance of hydrogen and the resistance of adsorption decreased, too

    摻入碳納米管對儲氫合金電極的容量影響較小，但其電化學性能卻有較大的改善，主要體現在：充電的極化減小，放電平臺更加平穩、循環伏安曲線的峰值電位隨掃描速度增大的遷移量減小，交換電流密度增大，電極的歐姆電阻、電化學反應、擴散電阻和吸附電阻均減小。
  9. The purpose of this paper is to resolve some key technologies of the amplitude - modulation inductive displacement transducer signal processing circuit with nanometer resolution, such as the design of high stability signal generating circuit ; the technology of high precision digital phase - sensitive detection circuit ; the technology of digital filter and linearization, etc

    本文主要研究調幅式電感位移傳感器精密測量系統中涉及的高精度載波信號發生技術、高精度數字相敏檢波技術、數字濾波及線性擬和等關鍵技術，目的是進一步改善調幅式電感位移傳感器精密測量系統的測量精度，適應納米級測量的要求。
  10. Unknown displacement and electric potential jumps in the integral equations are approximated with a product of fundamental density function and polynomials, in which the fundamental density function reflects singular behavior of electroelastic fields near the crack front and the polynomials can be reduced to a real constant under uniform loading

    超奇異積分方程中的未知位移間斷和電勢間斷近似地表示為基本密度函數與多項式之積，其中基本密度函數反映了橢圓片狀裂紋前沿電彈性場的奇異性，而多項式在均布載荷作用下可用一個常數來表達。
  11. The experimental results showed that firstly, the distribution of resistiveity, mobility, carrier concentration, epd and ab - epd in gaas substrate was not uniform ; secondly, the distribution of electrical parameters depended on that of epd and ab - epd ; thirdly, mesfet devices performance correlated with ab microdefects ; last, as shown by pl mapping results, it is substrate with better parameters quality that could provide more chance to fabricate good mesfet devices

    實驗結果表明， lecsi - gaas的電阻率、遷移率、載流子濃度、位錯密度和ab微缺陷分佈都不是均勻的，且電參數的分佈與ab - epd 、位錯密度分佈有關。製作的mesfet器件的性能參數分佈與ab微缺陷有明顯聯系。從plmapping測量結果可以看出材料的襯底參數好，則pl譜的強度高， pl譜均勻性也好，器件參數也好，就有可能製作出良好的器件與電路。
  12. An auto - detecting method of the gauge with pointer that is based on digital image processing technique, high precision grating technique and step motor control technique is presented. there are advantages of high precision, high efficiency and auto - detecting for apply digital image processing technique to detect precision of the gauge with pointer ; moreover, it ’ s helpful to improve system ’ s resolution when high precision grating technique is applied to measure micro displacement ; also it makes system more automatic to control step motor in computer via step motor control card

    本文研究的指針式儀表的自動檢定方法是基於數字圖像處理技術、精密光柵測量技術以及步進電機控制技術的，將數字圖像處理技術用於指針式儀表的檢定，具有精度高、效率高、易於實現自動測量等優點;另外，將精密光柵測量技術用來測微位移，有利於提高系統的解析度;還有，通過步進電機控制卡來實現在計算機上對步進電機的控制，提高了系統的自動化程度。
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