電子蝕刻 的英文怎麼說

中文拼音 [diànzishíkè]
電子蝕刻 英文
o chemical etching for electronics
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 蝕 : Ⅰ動詞1. （損失; 虧耗） lose 2. （腐蝕） erode; corrode Ⅱ名詞（天體現象） eclipse
  • 電子 : [物理學] [電學] electron
  • 蝕刻 : [電學] [冶金學] etch; etching
  1. Yak hairs were treated by the microwave electron cyclotron resonance plasma reactive ion etching ( ecr - rie ) equipment to improve its property of weave

    摘要採用微波電子迴旋共振等離子體反應離子刻蝕（ ecr - rie ）裝置對氂牛毛纖維進行表面改性，從而改善氂牛毛的可紡性。
  2. Electron-beam lithography with a novel multilevel resist structure defines the pattern.

    採用新型的多層抗蝕劑結構的電子束光刻來形成圖形。
  3. " the hksar e - passports and e - d is will contain digital data including the holder s personal data and facial image which will be stored in the contactless chip embedded in the back cover of the travel documents, " mr peh said, " the holder s personal particulars and photograph will be inscribed onto the polycarbonate bio - data page of an e - passport or e - d i by laser engraving technology.

    白韞六先生續稱：特區電子護照及電子簽證身份書的封底內，皆藏有非接觸式晶片。晶片內儲存了數碼資料，包括證件持有人的個人資料及容貌影像。而這些個人資料及相片，將會以激光刻蝕技術刻印在特區電子護照及電子簽證身份書上。
  4. Ibm says its researchers optimized the sram cell design and circuit layout to improve stability and developed several novel fabrication processes in order to make the new sram cell possible

    為了在減小內存單元的同時確保產品的安全性，該公司研究人員開發出了將電子束與光學刻蝕技術相結合的製造技術。
  5. At present, feas have potential for use as an electron source in a wide variety of applications, including microwave power amplifiers ( such as twts, klystron ), flat panel displays, electron microscopy, and electron beam lithography

    目前，場致發射陣列陰極的應用領域十分廣泛，主要包括微波器件（應用於twts ， klystron等） 、平板顯示器（ feds ） 、電子顯微鏡及電子束刻蝕系統等。其中，應用研究的焦點主要集中在平板顯示器和射頻功率放大器。
  6. A large number of attempt and painstaking experiment have been done in this paper according to existing project. we also do lots of chemical and electrochemical etching research in material of lab6, and find out three kind of methods to produce the field emitting cold cathode including reactive ion etching ( rie ) with oxygen, wet process etching and electrochemical etching. through produce some field emitting cold cathode single tip including lab6 field emitting cold cathode, molybdenum field emitting cold cathode, tungsten field emitting cold cathode, tungsten rhenium field emitting cold cathode, molybdenum covered with lab6 film field emitting cold cathode

    而且，目前可借鑒的參考文獻較少，圍繞著前人做過的方案，本文做了大量工作，在已有文獻介紹的基礎上，結合原有的理論和實踐基礎，摸索出了包括高溫氧作用反應離子（ rie ）刻蝕法、濕法腐蝕法和電化學腐蝕法在內的三種制備工藝，運用電化學腐蝕工藝成功制備了單尖的六硼化鑭場發射冷陰極尖錐、鉬場發射冷陰極尖錐、鎢場發射冷陰極尖錐、鎢錸合金場發射冷陰極尖錐以及有六硼化鑭薄膜覆蓋的鉬場發射冷陰極尖錐。
  7. This thesis work has researched the fabrication technics of photonic crystal defect waveguide with air - bridge structure and collecting waveguide ; suggested using uv - lithography and wet etching to fabricate traditional waveguide, after that, using eb - lithography and dry etching to fabricate photonic crystal holes, so can reduce the fabrication cost by a big range ; designed the moulding board, which can fabricate the air - bridge structure and is convenient for recognizing position in eb - lithography ; the structure consisted of traditional waveguides and etching grooves are fabricated on soi successfully, then an successful eb - lithography is realized on the structure, the defect waveguide collected with the traditional waveguide quite well ; used the etching grooves to do the sacrificial layer etching experiment, which grounded etching sacrificial layer by photonic crystal holes in next step

    提出採用紫外光刻工藝製作傳統波導結構之後，通過電子束曝光和干法刻蝕製作光子晶體小孔的工藝方案，大幅度減低了製作成本；設計出可形成空氣橋結構、並且適用於電子束曝光位置識別的光刻模板，在soi材料上成功製作出帶有空氣橋刻蝕預留槽以及接續光波導的結構，在該結構上成功實現了光子晶體帶隙波導的電子束曝光，帶隙波導與接續光波導位置接續良好；最後利用預留槽進行了刻蝕犧牲層的實驗，為下一步利用光子晶體小孔刻蝕犧牲層形成空氣橋結構打下了基礎。
  8. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。
  9. Fabrication of ultra deep electrical isolation trenches with high aspect ratio using drie and dielectric refill

    用深反應離子刻蝕和介質填充技術製造具有高深寬比的超深電隔離槽
  10. The studies expressed that the tensile - strength declined with the growth of dose rate after the radiation treatment, and at the same time, the gel content had extreme value with the change of the dose rate. the surface of uhmwpe fibers showed some irregular micro - pits and dents after radiation treatment, narnely rough degree increasing. their number and deepness increased with increase of dose. and this phenomenon is the most obvious when the dose rate was 8. 5kgy / s and the dose was 400kgy. at the same time some containing oxygen groups, including hydroxyl group, carbonyl group and carboxyl group, were introduced into the fiber surface which was exposed to the air

    研究表明， uhmwpe纖維經電子束輻照處理后，纖維的拉伸斷裂強度隨劑量率的增加呈下降趨勢，凝膠含量隨著劑量率的變化存在極值。纖維表面出現了不規則的微裂紋和凹痕，隨著劑量的增大，電子束對纖維表面的刻蝕程度增加，在本研究中以劑量為400kgy劑量率為8 . 5kgy s時刻蝕效應最為明顯。同時，在空氣中進行輻照時，纖維表面被引入了一些含氧基團，包括羥基、羰基和羧基。
  11. All diodes have large reverse leak current density, which maybe caused by some reasons such as many ions are brought in course of evaporating metal on silicon surface of 6h - sic, chemical etch brings disfigurements such as burrs and dentate erodes as well as the rinse on surface of samples is not drastically accomplished

    兩個肖特基二極體反向漏電流較大，估計原因為正面蒸發金屬時引入大量離子、光刻引入毛刺和鉆蝕等缺陷、金屬與樣品粘附能力差及樣品背面歐姆接觸制備好后正面清洗不充分等。
  12. A different approach, named " two step growth approach " has been applied to fabricate an 8x8 photodiode array in the first time. the micro - processing procedures of this photodiode array including standard photolithography, a number of metallisation, wet - chemical etching and sic2 deposition for insulation were developed in this study

    首次採用「兩步法」制備出了新穎的8 8zns肖特基光電二極體陣列，詳細研究並確定了制備該器件的標準光刻、金屬沉積、濕化學腐蝕、 sio _ 2絕緣層沉積等一系列微電子處理工藝。
  13. The most prevalent procedure is to use photolithography or electron - beam lithography to produce a pattern in a layer of photoresist on the surface of a silicon wafer

    最常用的步驟是用光蝕刻或電子束蝕刻法，在矽晶圓表面的光阻層上製作出圖案。
  14. It has broad application prospect in the following fields such as microelectronics, photoelectronic devices, large screen flat panel display, field emitter array, acoustic surface wave device, photon crystal, light waveguide array, holographic honeycomb lens and micro - optical element array, micro - structure manufacture, fabrication of large area grating and grid of high resolution, photoresist performance testing, profile measurement and metrology, etc. the paper only involves the primary research of interferometric lithography

    在微電子、光電子器件、大屏幕平板顯示器、場發射器陣列、表面聲波器件、光子晶體、光波導陣列、全息透鏡和微光學元件陣列、微結構製造，高分辨、大面積光柵和網格製造，在抗蝕劑性能測試、面形測量和計量等領域，干涉光刻技術都具有廣闊的應用前景。
  15. Although the creation of a finely detailed bas - relief master is expensive because it requires electron - beam lithography or other advanced techniques, copying the pattern on pdms stamps is cheap and easy

    雖然得花上大筆金錢，才能以電子束蝕刻或其他高階技術製作出有精密細節的淺浮雕主片，但要復制pdms壓模的圖案卻是便宜又容易。
  16. Rf plasma system 9200 is a barrel - type batch stripping system with optional high temperature capabilities for photoresist removal, nitride etch, and other cleaning applications in semiconductor and mems fabs

    射頻等離子體9200是桶式爐脫模體，擁有可控制的高溫系統可去除光阻材料、氮化物蝕刻和半導體與微型機電系統等方面的清洗功能
  17. As an important step of microelectronic process, etching technology has gained much attention. it will play an important role in microfabrication such as new - made microeletronics mechanism ( mems ) and photoelectrics integration system

    刻蝕工藝不僅作為微電子工藝中的關鍵技術一直受到人們的關注，而且在新興的微機電系統，光電集成系統等微細加工中也將得到重要應用。
  18. In a word, the two type of voa both have valuable applicability and potential market. the author have done numerous processing to work out new processing such as polymer coating and cure and triple - layer - metal film vaporing. other new processing, polymer ultra - violet ( uv ) cure and inductively - coupled plasma ( icp ) etching were studied

    作者經過反復的工藝實驗，確定了聚合物波導塗膜和固化、三層金屬電極蒸發和腐蝕等新工藝的參數，並得到了聚合物紫外固化、等離子體刻蝕等新工藝的初步數據。
  19. Inductively coupled plasma etching technology and its application in optoelectronic devices fabrication

    刻蝕技術及其在光電子器件製作中的應用
  20. Finally, according to the technique of plasma etching, an evolution model describing the spatio - temporal profiles of the micro - trench is established. and that we simulated the effects of collisions and the source parameters on the etching profiles

    最後，針對等離子體刻蝕工藝，建立了微結構區剖面的時空演化模型，並模擬了碰撞效應和電源參數對刻蝕剖面演化的影響。
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