電子頻移 的英文怎麼說

中文拼音 [diànzibīnyí]
電子頻移 英文
electron frequency drift
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 頻 : Ⅰ形容詞（次數多） frequent Ⅱ副詞（屢次） frequently; repeatedly Ⅲ名詞1 [物理學] （物體每秒鐘振動...
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 電子 : [物理學] [電學] electron
  1. A novel phase - shifted zero - voltage and zero - current switching pwm dc / dc full - bridge converter is presented in this thesis, which is based on the groundwork of summarization of the development of power electronics in recent years and lucubration in theoretical basis of modern high frequency soft switching power convert technique and analysis of operation principle, characteristic of the circuit and inherent drawbacks of the traditional phase - shifted zero - voltage switching pwm dc / dc full - bridge converter

    本文在對近年來電力電子學科的發展高度綜述和對現代高頻軟開關功率變換技術理論基礎深入研究的基礎上，對傳統的移相控制zvspwmdc dc全橋變換器的工作原理、電路特性、存在的缺點進行了分析，在此基礎上提出了一種改進型的移相控制zvzcspwmdc dc全橋變換器。
  2. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  3. Electronic engineering limited shanghai inge computer network department is a professional development network of high - performance video products, wireless mobile data products and provide e - commerce, enterprise information platform solutions high - tech enterprises

    上海英奇電腦電子工程有限公司網路部，是一家專業開發高性能視頻網路產品、無線移動數據產品並提供電子商務、企業信息平臺解決方案的高科技企業。
  4. The system is different from traditional silicon controlled dephasing method, such speedy modules as whole controlled electric and electronic equipment igbt and high frequency pwm controlling methods are employed, and the voltage of exchanging power supply of motor of beam pumping units can be controlled automatically, so there is no problem of power factor being decreased brought by silicon controlled phase single controlled, power factor in power net of beam pumping units " motor is enhanced really

    由於雙管齊下，電機電網側的功率因數得到了大大提高。與傳統的可控硅移相控制方式不同，本系統採用全控型電力電子器件igbt等快速模塊及高頻pwm控制方式，對抽油機電機的交流供電電壓進行自動控制，不存在可控硅相控角所帶來的功率因數變差的問題，真正提高了抽油機電網側的功率因數。
  5. With the advance of semiconductor manufacturing, circuits with increasingly higher speed are being integrated at an increasingly higher density, which makes analysis and verification of power grid integrity more important. power grid integrity includes four issues, namely, ir drop analysis, ground bounce analysis, ldi / dt from the pin inductance and em analysis

    隨著超大規模集成電路集成度和工作頻率的不斷提高，電源網格完整性分析變得越來越重要，一般有四個關鍵問題： ir電壓降分析、接地點電勢上升（ groundbounce ）分析、來自引腳電感的ldi / dt分析和電子遷移率em分析。
  6. Algan / gan hemt has high breakdown electric field, fast electron drift velocity and large electron concentration, so it has been used more and more in high frequency and large power fields

    Algan / ganhemt由於具有擊穿電壓高、電子漂移速度快和電子濃度大等特點，已被越來越多地應用於高頻及大功率領域。
  7. Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity

    Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。
  8. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  9. From some characteristics observed, such as the short lift time, narrow frequency band, fast frequency drift, quasi - periodic pulsation, spike event and complex magnetic structure, it is considered that the radiation mechanism of these events may be principally due to the electromagnetic waves magnified directly by the instable electronic cyclotron

    從它們的觀測特徵：短壽命，窄頻帶，頻率快速漂移，及尖峰事件與磁結構復雜的大黑子活動區密切相關等，認為這些事件的輻射機制可能是電子迴旋脈澤不穩定直接放大電磁波所致。
  10. The basic principle, main properties, typical parameters, technical characteristics and general situation of klystron are introduced. the electron beam prebunching in the modulated cavity and shift tube of relativistic klystron amplifer ( rka ) is studied analytically, a self - consistent equation of radiation generated by the prebunched electron beam in the radiation cavity is derived using the field method of particle ? wave interaction instead of the electrical circuit method, and in terms of it, the gain in the linear regime calculated, a field analysis method is proposed. the theory analysis shows that the characteristic parameters, such as resonance frequency, real part of gap - impedance, external quality fadtor in all kinds of klystron output circuits including single - beam, multi - beam, single - gap, multi - gap, single - beammulti - gap, multi - beam multi - gap klystron output circuit, can be calculated by the field analysis method

    本文系統的介紹了速調管的工作原理、主要特點、發展概況、主要性能指標和技術特點，解析的研究了電子束在相對論速調管放大器的調制腔和漂移管中的預群聚;用粒子波互作用的場方法導出了在輻射腔中預群聚電子束產生輻射的自洽方程，同時對線性區的增益進行了計算。理論分析表明，場分析法可用於計算單注單間隙、多注多間隙、單注多間隙和多注多間隙速調管輸出迴路的諧振頻率、間隙阻抗實部和外觀品質因數等特性參數。
  11. Electron gun is the foremost parts of twt, it can produce electron beam with a certain shape and current, in order to guarantee the reliability and security of work, it ’ s design have to meet to the requirement not only of electric parameter, but also all kinds of subsidiary characteristics such as filament pyrogenation efficiency, warm up time, shape size, pole space capacitance and the ability to be able to bear the press and all kinds of rigorous run conditions such as high temperature, high humidity, low air pressure, strong vibration and great strike

    由於行波管的大功率和高頻率等特性，目前還沒有任何其他的器件可以代替。行波管是應用高頻電磁場與電子注進行互作用的機理進行工作的，而電子槍是行波管中產生電子注並使它成型的基本部件，電子槍的結構設計決定了槍體自身必須具有良好的抗振可靠性，否則結構發生共振或振動位移過量，就會導致行波管的失效。因此對行波管電子槍的研究具有非常重要的意義。
  12. X. mao, y. liu. null phase - shift polarization filtering for high frequency radar, ieee trans. aerospace and electronic systems, 2007. 7

    毛興鵬，劉永坦，鄧維波.頻域零相移多凹口極化濾波，電子學報，錄用
  13. Since the early 1990s, when the electronics industry came to the stage of digital technology, china has broken through in high - end series personal computers and servers, large - scale parallel computer systems, chinese electronic publishing systems, large - scale spc exchanges for central offices, mobile communications systems, sdh wdm fiber communications systems, thin route satellite communications systems, new generation digital video terminals, manufacturing technology for 0. 8 - 0. 35 m cmos integrated circuit chips, etc

    到90年代進入數字技術階段，高檔系列微機和服務器產品、大規模并行計算機系統、中文電子出版系統、大型局用數字程式控制交換機、移動通信系統、 sdh波分復用光纖通信系統、稀路由衛星通信系統、新一代數字視頻終端、 08 ? 035微米cmos集成電路晶元製造技術等，都有突破性進展。
  14. The saturation time in our simulation is consistent with the prediction of the theory. furthermore, we also studied the propagation of two pulses with inverse phase. in this case, the wakefield excited by the first pulse will be absorbed by the second pulse which shifts to higher frequency

    此外，我們還研究「位相相反」的兩個脈沖在稀薄等離子體中的傳播，第二個激光脈沖由於吸收了前一脈沖激發的靜電場，頻率向高頻方向漂移，得到頻移的大小與符合理論推測。
  15. Due to the good performance of gaas devices of high frequency, high electron mobility and low noise, the high frequency devices are mostly made of gaas materials now

    由於gaas器件優良的高頻、高電子遷移率、低噪聲性能，所以現在高頻器件一般都選用gaas材料。
  16. And it has significance in multimedia communication, digital multimedia broadcast and portable consumer electronics etc. the real - time implementation of video coding requires very high computation power and memory bandwidth

    它面向移動多媒體應用，對新一代移動多媒體通信、數字多媒體廣播、便攜式視聽消費電子產品等產業的發展具有重要意義。數字視頻數據壓縮的實時實現對處理器的計算能力和帶寬要求很高。
  17. Analog temperature compensation crystal oscillator ( atcxo ) is widely used in electronic equipments such as communications, navigation, radar, mobile telephone, program control telephone, measure instruments etc. as their reference frequency source, it is critical part of the above equipments, called as their “ heart ”

    模擬溫度補償晶體振蕩器（ atcxo ）廣泛應用於通信、導航、雷達、移動通信、程式控制電話、測量儀器等電子設備中。作為基準頻率源，它是上述電子設備的關鍵部件，被稱為此類電子設備的「心臟」 。
  18. The frequency upshifting and differential cross section of the laser synchrotron source ( lss ) are studied based on the thomson backscattering of intense laser radiation from a counterstreaming relativistic electron

    摘要研究了逆流相對論電子與激光脈沖相互作用獲得激光同步輻射的頻率上移、微分散射截面等特性。
  19. During the 10 months of project implementation, a team to support the business in all aspects were recruited, a factory dedicated to electronic product manufacturing was designed and installed, sap was implemented to cover all the scope of business, technology of atv28 was transferred from the original factories ( tsij in japan and semb in indonesia ) - a range of drives for simple oem machines

    短短10個月，他們招聘並組建了一個新的團隊，設計並建成了專業的電子產品製造工廠，並在所有的業務領域都運用了先進的sap管理系統。 ssd生產的第一批產品是適用於簡單oem客戶需求的變頻器產品atv28系列，將其技術從母工廠（日本的tsij和印度尼西亞的semb ）轉移並通過質量確認后， ssd已經達到atv28的規模生產能力。
  20. The lifetime of particles co - doped with li + and na + increased as compared to that of un - doped one. however, the lifetime decreased as co - doped with other dopants. in addition, we also studied that ultraviolet ( uv ) light - induced spectral change in eu3 + - doped aluminosilicate glass and red to blue up - conversion emission of tm3 + -, yb3 + - doped y2o3 nanocrystals

    （ 2 ）在紫外光輻照下， eu ~ （ 3 + ）摻雜的氧化物玻璃電荷遷移帶強度降低，通過研究輻照與激光的功率密度、波長的關系，發現這種變化屬于單光子過程，並具有頻率選擇性。
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