電離擊穿 的英文怎麼說
中文拼音 [diànlíjīchuān]
電離擊穿
英文
ionization puncture-
It not only gains the physical contrastive datum mark, but also improves the blm stability. cyclic voltammetry is used to study the characteristic of blm attached to metal surface, as the forming of blm, the voltammetric characteristics of blm, the selection of ion and measurement of different ki concentration
就以上提出的處理方法，採用循環伏安法詳細研究了金屬表面所覆blm的基本性質，如：膜形成液的配製、膜的形成、膜電阻、膜的伏安特性、膜的擊穿電壓、離子的識別性及對不同濃度的碘化鉀溶液的測試。Having reacted with copper, paa becomes complex. the complex decomposes after heat treating and cause the increase in dielectric constant and reduction in dielectric breakdown strength. otherwise cu2o and cuo emerge from the complex, too
N與cu反應后，形成絡合物，熱處理時自身降解，擊穿強度降低，介電常數提高； cz在熱處理后從絡合物離解出來形成cllo和cuzo 。Interface charge has a profound influence on the breakdown voltage of flr structure. on severe condition it can make the outer flr far from main junction disfunction
界面電荷對場限環終端結構的擊穿電壓影響很大，嚴重的甚至可以使遠離主結的場限環失去作用。Test results indicated : with the hoist of altitude, the increase of ice amount and the rise of pollutant, the average flashover voltage reduced. the character exponent generally depends on the insulator profile, ice amount, ice state and pollution severity etc. by means of a high - speed camera, a data acquisition system and high voltage test facilities, a series of the flashover processes on ice surfaces were record. the experimental results form this study and the subsequent theoretical analyses suggested : the thermal ionization of the air in front of an arc root resulted in arc movement ; the electrostatic force had an auxiliary effect of impelling arc propagation ; the electrical
通過對攝像機、數據採集系統及高壓試驗裝置記錄覆冰絕緣子表面閃絡電弧的發展過程的試驗結果進行理論分析得出：弧根周圍空氣的熱電離導致了電弧的發展，靜電場力對電弧的發展起到了加速作用，電擊穿僅發生在閃絡最終的跳躍階段；通過測量閃絡過程中的放電電壓、泄漏電流、閃絡時間、覆冰水電導率、電弧長度及電弧半徑等參數，得到了不同階段電弧（電弧起弧階段、電弧發展階段及完全閃絡）的發展速度、臨界電弧長度均隨覆冰水電導率的增加而減小。Distribution of electromagnet field in the space of h - type rf ion source is worked out derivation from maxwell equations, and three - dimensional vector graphs of e and b in the space of rf ion source are calculated and plotted by mafia software
並採用mafia軟體進行了三維實體建模，計算了高頻離子源放電擊穿前和穩定工作后的電磁場分佈，得到了高頻離子源放電空間電磁場分佈的直觀圖像。According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage
Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。The conclusion that ez is more important during the breakdown of rf ion source is made out by comparing ez and e 6 before breakdown, and then, the breakdown criterion of rf ion source is deduced, and the relation between breakdown voltage and pressure is analyzed too
通過比較擊穿前高頻電場的軸向和幅向分量，得出了軸向電場在高頻離子源擊穿中起主要作用的結論，並進而推導出了高頻離子源的擊穿判據，得出了氣體擊穿時離子源擊穿電壓和放電管內氣壓的關系。Then the ideal models ( dielectric isolation structure with high - voltage interconnection and without high - voltage interconnection ) are simulated by a 2d device simulator medici respectively. according to the simulation results, the two models ’ breakdown mechanism is analyzed and compared, and the influence of the isolated trench structure parameter on breakdown - voltage is studied, synchronously
藉助二維數值模擬軟體medici對理想模型（有、無高壓互連線兩種情況的介質隔離結構）進行模擬，分析其耐壓機理，研究隔離槽參數（槽寬、槽內氧化層厚度）對擊穿電壓的影響。Firstly, the deep trench dielectric isolation structure is designed, and a mathematical model of the breakdown - voltage is given
首先設計厚膜soi基深槽介質隔離結構，經過分析得到擊穿電壓的數學模型。分享友人