高壓氣體放電 的英文怎麼說

中文拼音 [gāoyāqìtǐfàngdiàn]
高壓氣體放電 英文
high-pressure discharge
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 壓 : 壓構詞成分。
  • 氣 : Ⅰ名詞1 （氣體） gas 2 （空氣） air 3 （氣息） breath 4 （自然界冷熱陰晴等現象） weather 5 （氣味...
  • 體 : 體構詞成分。
  • 放 : releaseset freelet go
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 高壓 : 1 （殘酷迫害; 極度壓制） high handed 2 [氣象學] （高氣壓） high pressure3 （高電壓） high tension...
  • 氣體 : gas; gaseous fluid
  • 放電 : [物理學] （electric） discharge; electro-discharge; discharging
  1. The increase of luminous efficiency is a result of the decreased cell voltage and electron temperature in discharge

    當氣體放電于較低電壓的情況下，電子溫度較低並可以提高發光要率。
  2. When the wave wells up the regulation that the voltage is greater than the gas and in charge of, gas in charge of discharge earth connection too high voltage, protect the apparatus systematically

    當浪涌電壓大於氣體管的規定時，氣體管會將過高的電壓放電接地，保護系統器材。
  3. Vacuum switchgear tubes, gas spark gaps and pseudospark tubes are all switches of gas discharge theory, and have the good qualities of high withstanding voltage, high amplitude of current and high power

    真空開關管、火花開關、偽火花放電管都是利用氣體放電理論的開關元件，具有高耐壓能力、高峰值電流、功率大等優點。
  4. The result shows that argon gas can not only promote the excitation of plasma at low pressure, but also improve discharge state, increase the density and activation of reaction radical and improve the quality of diamond films. on the other side, argon can cool the plasma and maintain low temperature of substrate due to its big ionization section and high collision probability with gas molecules

    結果表明，氣體系統中引入氬氣一方面不僅有利於維持低壓放電，而且改善放電狀態，提高反應活性基濃度和活性，提高低溫沉積金剛石膜的質量；另一方面，由於其大的電離截面使其和電子碰撞的幾率大大提高，對等離子體進行冷卻，有利於基片溫度的降低。
  5. The high - intensity - discharge ( hid ) lamps are widely used in lighting system for the high luminous efficacy, long life and good color rendering. high - pressure - sodium ( hps ) lamps have the best combination of the above properties and are considered as ideal light sources. therefore the design of the electronic ballast for the lamps is an important part of the green lighting project

    高強度氣體放電（ hid ）燈以其光效好、壽命長、顯色性好而在照明領域得到廣泛應用，高壓鈉燈（ hps ）即為一種具有上述優點的理想光源，而設計與之相匹配的電子鎮流器是實施綠色照明工程的重要組成。
  6. The conclusion that ez is more important during the breakdown of rf ion source is made out by comparing ez and e 6 before breakdown, and then, the breakdown criterion of rf ion source is deduced, and the relation between breakdown voltage and pressure is analyzed too

    通過比較擊穿前高頻電場的軸向和幅向分量，得出了軸向電場在高頻離子源擊穿中起主要作用的結論，並進而推導出了高頻離子源的擊穿判據，得出了氣體擊穿時離子源擊穿電壓和放電管內氣壓的關系。
  7. Abstract : it has been discovered that the coke formed in ch4 coupling under plasma can be eliminated via pure h2 discharge in the system. eliminating coke under plasma with positive or negative high voltage in dc electric field has been compared with that in ac field. the elimination of coke takes place only on the negative of the two electrodes in dc field, while on both electrodes in ac field. the coke on the reactor walls can be eliminated with either positive or negative high voltage and in either dc or ac field. based on the experimental facts, hypotheses of the reaction mechanism are suggested. quantity of eliminating coke depends on diametrical ratio between reactor and the electrode, input power and electrode materials

    文摘:發現了等離子條件下甲烷偶聯反應中形成的積炭可以通過該體系中純氫氣放電而消除.將消除積炭使用直流電場的正高壓和負高壓與使用交流電場作了比較，發現直流電場中無論使用正高壓還是負高壓，只有陰極上的積炭可以被消除，而交流電場中兩極積炭均可被消除，反應器壁上的積炭在以上任何情況下均可被消除.基於實驗事實提出了機理假設.消除積炭的量與輸入功率、反應器對電極的直徑比以及電極材料有關
  8. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  9. Plasma nitriding is an application way to metal surface and heating treatment based on the formed plasma by glow discharge. nitriding is a way of heating treatment, namely, metal accessory is put into activate nitrogen and the gas of low light pressure is ionized into energy electrons, high energy ions and high energy neutral atoms by the action of the electric field under a definite temperature and the time of the heat preservation

    等離子滲氮是利用輝光放電形成等離子體在金屬表面，熱處理方面的應用，滲氮是強化金屬表面的一種熱處理方法，是將金屬零件置於活性氮的介質中，在一定溫度和保溫時間下，低光壓氣體在電場作用下使之電離產生能電子、高能離子和高能中性原子。
  10. This chapter introduces the high intensity discharge lamp ( hid ) of philips brand ( includes metal halide lamp, colour metal halide lamp, ceramic discharge metal halide lamp, high - pressure sodium lamp, high - pressure mercury lamp etc. ) together with interrelated lamp and lanterns ( floodlight lamp, project - light lamp, aluminum - cover lamp etc. ) and accessories

    本篇介紹荷蘭飛利浦品牌的高強度氣體放電燈（包括金鹵燈、彩色金鹵燈、陶瓷金鹵燈、高壓鈉燈、高壓汞燈等）和相關燈具（泛光燈、投光燈、鋁罩燈等等）及配件。
  11. We specialize in the manufacture of high pressure sodium lamp, metal halide lamp, high pressure mercury vapor lamp, electromagnetic ballast for hid lamps, electronic igniter, compensation capacitor condenser, and various industrial and outdoor lighting fixture

    公司主要產品有金屬鹵化物燈高壓鈉燈高壓汞燈燈泡管芯全部自已生產以及各類型號規格的氣體放電燈用鎮流器電子觸發器，整體電器箱。同時生產各種外形雅緻質量上乘價格合理的工礦燈具及室外照明燈具，深受用戶青睞，在市場上享有良好的聲譽。
  12. Novel power supply equipment used for high - pressure metal halide discharge lamp

    一種高氣壓金屬鹵化物氣體放電燈用新型電源的原理研究
  13. Modern cylinder pressure acquisition system is deeply affected by the advanced computer hardware technology. a / d card with the capabilities of high resolution, high sampling rate, non discrepancy and setting sampling rate at will is combined with a lot of excellent measuring equipment such as crank shaft angle encoder, charge amplifier, industrial control computer, etc. we use four type 6117a46 spark plug cylinder pressure sensors made by kistler corp.,

    高速發展的計算機硬體技術深刻影響著現代氣缸壓力數據採集系統的發展，高解析度、高採集率、多通道、無相差和可以任意設定采樣頻率等特性的a / d板卡及一大批性能優越的相關測試儀器如轉角信號發生器、電荷放大器、工控計算機等。
  14. The oxidation of sulfite is an important process in flue gas desulfurization by ammonia method

    摘要使用氣體放電等離子體對較高濃度的亞硫酸鈉進行氧化，在不同電壓和頻率條件下進行了實驗。
  15. Utilizing special gas to be in charge of discharging, the principle suppress the too high voltage

    利用特殊的氣體管放電原理來壓制過高電壓。
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