bias condition 中文意思是什麼
bias condition
解釋
偏置條件-
The preattentional bias of heroin abstainers under two - cues competition condition
雙線索競爭條件下海洛因戒除者的前注意偏向特性 -
This condition, known as reverse bias, is not conducive to current flow through the junction.
這種叫做反向偏置的狀態不利於電流穿越結。 -
Although the accuracy in meterological forecast of tropical cyclones has been distinctly improved, it is still a difficult problem confronting masters and anti - typhoon team leaders of the companies how to steer clear of typhoon reasonably and safely in case that the actual resistance to typhoon is strong enough, the sea area wide enough, and the time permitting ; to avoid unreasonable deviation, anchoring for shelter, blindly rushing onto her path, being involved in storm area, even into the the center of typhoon ; under the limitation of the condition of the sea area and time. how to take correct meassures to escape, such as navigating with wind or windward in bias angle, slowing down, anchoring, berthing alongside the warf, mooring to buoy, etc. as early as possible
盡管氣象部門對熱帶氣旋監測預報的準確率已經比過去有了明顯的提高，然而船舶在海上如何避離臺風，如何做到在本船實際抗風能力允許、海域條件允許、時間也充裕的前提下合理避臺，安全避臺，避免不合理的繞航、 「扎風」 ，避免盲目冒進「搶風頭」 ，更避免被捲入強風區甚至臺風中心；在海域條件受限、時間尷尬的情況下又如何正確採取偏順航、偏頂航、滯航、錨泊、系岸、系浮等抗臺措施和技術，盡快擺脫臺風的影響，仍然是擺在船長和公司防抗臺領導小組面前的一個實實在在的難題。 -
Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically
在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。 -
For the requirement of more negative differential resistance ( ndr ) routes, three split quantized energies are formed in the four - period inp / ingaas superlattice structure with relatively thin ingaas quantum wells under ideal flat - band condition, and high - field domain in the superlattice is formed under sufficiently large operation bias
為獲得?多軌跡的負微分電阻，本研究組件使用?相當薄之砷化銦鎵?子井，可使四周期磷化銦/砷化銦鎵超晶格結構在平帶情況下形成三個分?的?子化能階，且於足夠大的操作偏壓下在該超晶格結構中形成?高場區域。 -
In order to obtain similar deposition condition, very different bias must be applied to the substrate when the grounding of the arc source is different. at last, carbon films were deposited and their properties were measured
分析了這種現象產生的原因以及不同接地方式對沉積薄膜的影響，即當弧源接地狀態不同時，要獲得相似的沉積條件，給基片臺施加的負偏壓應有所不同。 -
The performance of modulators employing mqw is governed by the quantum confined stark effect. in order to simplify the analysis of mqw, we obtain an explicit formula concerning the correlations between the gaas / gaalas quantum well widths of finite potential barrier structure and those of infinite potential barrier structure under the condition that the ground state energies are equal at zero bias states. then the transfer matrix method is used to investigate the optical field distribution in the mqw waveguide based on five - step asymmetric coupled quantum well structure that is really used in the modulator
本論文首先根據量子限制stark效應，發展了等效寬度思想，提出了把單量子阱結構的有限深勢阱的分析轉化為無限深勢阱模型的顯式公式，從而大大簡化了電場下量子阱結構的分析；接著利用轉移矩陣，把周期性的量子阱結構簡化為三層結構，得到了實際採用的非對稱三阱結構量子阱的場分佈，並討論了量子阱結構的偏振特性。 -
While the soa wavelength converter is operated at a bias close to the transparent condition for the assisted beam, it doesn ' t influence the gain of the soa wavelength converter
而且當半導體光放大器操作在對此輔助光之透明電流時，此輔助光將不會影響半導體光放大器之增益。 -
The last, taking into account of the nonlinear transformation from sphere frame to cartesian frame, maneuvering target tracking is simulated by using current statistical model and converted measurement kalman filter ( cmkf ) without linearization bias in the statistical condition. the paper presents the converted measurement covariance that determines when to use the current measurements vs. the predicted state, and the simulation results are satisfied
最後，針對球坐標系與直角坐標系之間的變換是非線性變換的特點，哈爾濱工程大學博士學位論文運用統計條件下不存在線性化誤差的轉換測量卡爾曼濾波演算法，結合「當前」機動模型對機動目標進行了模擬研究。 -
Methods to calculate effect of bias error and dispersion on first - round hitting probability and on multi - round hit probability are discussed. according to calculating results, influence on first - round hitting probability by accuracy of each factor, by the firing range, by the change of meteorology condition with space - time, and by dispersion are analyzed, so are influence on multi - round hitting probability by bias error & dispersion
討論了射擊開始諸元精度與密集度對首發命中概率與多發命中概率影響的計算方法，並根據計算結果討論了決定射擊開始諸元的各因素精度、射程的變化、氣象條件隨時間與空間的變化對首發命中概率的影響，密集度的變化對首發命中概率的影響，及射擊開始諸元精度與密集度對多發命中概率的影響。 -
Experimental results indicated that for the two reverse - bias stresses the degradation of the devices depended on magnitude and energy of the injected carriers. fc stress condition may speed up the degradation of devices and shorten the time of evaluating the devices life
在實驗中我們發現對這兩種應力，器件的退化與注入的熱載流子的數量以及能量有關， fc應力方法可以加速器件的退化，縮短評估器件壽命的時間。
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