carrier hole 中文意思是什麼
carrier hole
解釋
輸紙孔-
A ball carrier on the opposing team breaks through a hole in the line, is checked momentarily.
對方一個帶球，球員剛在人墻中沖開了一個缺口，前面又遇到了阻擋過不去。 -
In this paper, firstly the macro parameter of the series connection app was comprehensively analyzed, among which the trajectory location of the bullet emission and the terminal velocity of the bullet were mainly analyzed, and the feasibility of the series connection app to cope with explosive reactive armor was demonstrated. and then the macro design about the head of the series connection app was made, among which a particular analyse about the bullet " s launching process was made, from which we concluded the relation between the thickness of the airproof loop and the velocity of the bullet detached from the carrier and the relation between the length of the bullet and the velocity of the bullet detached from the carrier and the relation between the length of the bullet and the burning rate of the powder and the relation between the length of the bullet and the maximum pressure of the emission hole and the relation between the length of the bullet and the emitting time of the bullet, and the reasonable str ucture of the head of the carrier and bullet were designed, then the intensity of the head of the carrier was checked out using of the software of ansys
本文首先對子母式穿甲彈總體參量作了全面的計算分析，其中主要分析了子彈射出的彈道位置和必要的子彈著靶速度，論證了子母式穿甲彈對付爆炸式反應裝甲的可行性，然後對子母式穿甲彈彈頭部進行了總體設計，其中主要對子彈的發射過程進行了詳細的分析，得出了母彈彈頭部發射孔內閉鎖環厚度與子彈飛離母彈速度的關系、子彈長度與子彈飛離母彈速度的關系、子彈長度與火藥燃燒率的關系、子彈長度與母彈彈頭部發射孔內最大壓力的關系以及子彈的長度與子彈發射所需時間的關系，設計出了合理的母彈彈頭部結構和子彈的結構，並利用ansys有限元分析軟體對母彈彈頭部的強度進行了校核。 -
The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved
導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。 -
In wavelength conversion based on four - wave mixing ( fwm ) in soa, balance efficiency can be obtained in larger range when increasing saturation power of the optical amplifier and decreasing the saturation power of spectral hole burning and carrier heating
而在基於soa的四波混頻（ fwm ）波長轉換中，在提高光放大器飽和功率的同時減小光譜燒孔（ shb ）和載流子加熱（ ch ）飽和功率可有效提高較大頻率間隔處的轉換效率，並保持其在較大頻率失諧范圍內的效率均衡。 -
Transformation of the antijamming system of an imported hydraulic big hole drill carrier
進口全液壓大孔鑿巖臺車防卡系統的改造 -
Concentricity analysis of hole throats on both ends of carrier roller
托輥管體兩端孔頸的同軸度分析 -
Compared with green light - emitting device, blue oled has many problems such as brightness, efficiency, stability, and color saturation, in this study we investgaited the blue oleds systemically : 1 ) double heterosturcture oled was charaterized. due to the introducing of electron transport layer alq3 and hole - blocking layer balq3, the energy matching was more reasonable and the carrier injecting was more effective in the double - layer device. the maximum efficiency and luminance of this device attained to 1. 90 lm / w and 10, 000 cd / m2, respectively
其次，由於一直以來藍光oled器件的研究處于相對落後的狀態，其發光亮度、效率、穩定性和色純度都無法綠光器件相比，所以本論文在以下幾個方面對藍光器件的性能進行了系統的研究: 1 ）研究了雙異質型藍光oled器件，由於本研究引入了空穴阻擋層，使得載流子的復合和激子的擴散被限定在發光層內，器件的發光效率達到了1 . 90lm / w ，最大亮度達到了10000cd / m2 ，比傳統結構器件的效率和亮度提高了約一個數量級; 2 ）制備了結構為ito / npb / balq3 / alq3 / mg : ag的oled器件，研究發現，當改變各有機層厚度時，器件的電致發光光譜發生了從綠光到藍光的移動。 -
Majority carrier - a carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an n - type area
多數載流子-一種載流子，在半導體材料中起支配作用的空穴或電子，例如在n型中是電子。
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