crystal dislocation 中文意思是什麼

crystal dislocation 解釋
晶體錯位
  • crystal : n 1 結晶，（結）晶體；晶粒；水晶（＝rock crystal）；石英。2 【無線電】晶體。3 結晶玻璃；雕玻璃；...
  • dislocation : n. 1. 【醫學】脫位，脫臼；離位，轉位，位移。2. 【地質學；地理學】斷層，斷錯；【物理學】位錯。3. 混亂，打亂。
  1. Gallium arsenide single crystal - determination of dislocation density

    砷化鎵單晶位錯密度的測量方法
  2. In this paper, the dislocation in 50mm cz sapphire crystal had been observed by chemical etching with metallograph and sem

    本文用化學腐蝕法對cz法生長的50mm藍寶石單晶中的位錯和缺陷進行了分析研究，並採用金相顯微鏡和sem對其進行了顯微觀察和分析。
  3. Standard method for showing and measuring dislocation etch pits in indium antimonide single crystal

    銻化銦單晶位錯蝕坑的腐蝕顯示及測量方法
  4. With the development of the growth skill craft of gaas single crystal, the density of el2 can be controlled in 1 - 5 1016 / cm ~ 3 and its distribution becomes more uniform in gaas wafer too, so the distribution of carbon seems to be more important to determine the uniformity of electrical resistivity of si - gaas material. so it seems to be very important to study the distribution of carbon and the effect of dislocation on the distribution of carbon

    隨著單晶生長技術的發展，通過退火，由於si - gaas中理論化學配比偏離， el2濃度可被控制在1 1 . 5 10 ~ （ 16 ） cm ~ （ - 3 ） ，且分佈均勻。因此碳的分佈就成為決定si - gaas材料電阻率均勻性的一個關鍵因素。所以，研究碳微區均勻性就顯得非常重要。
  5. Abstract : the defects such as inclusion, splitting, dislocation and dendrite in the pbxla1 - x ( zry tiz sn1 - y - z ) o3 ( plzst ) single crystal grown from pbo - pbf2 flux by the slow cooling self - seeding technique were discussed in this paper. the forming mechanism of these defects were analyzed and some measures to eliminate the defects were proposed

    文摘:本文介紹了助熔劑緩慢降溫自發成核法生長的稀土摻雜鋯鈦錫酸鉛鑭（ plzst ）晶體中出現的幾種缺陷：包裹體、開裂、位錯、枝晶，分析了這些缺陷的形成機理並提出了減少和消除這些缺陷的一些措施。
  6. Another is shear - model fracture which is thought that it is associated with dislocation motion ( shear + rotation ) of crystal at microlevel, fragmentation of solid at mesoscale level and large plastic strains at the macroscopic level

    剪切型斷裂在微觀上與晶粒內或晶粒間的滑移和位錯有關，細觀上與集中變形帶中的微剪切面集中有關，宏觀上則與結構內的集中剪切帶有關。
  7. In the dispersal dislocation area, the variation of carbon concentrations is very small in dislocation areas and perfect crystal lattice areas

    分散排列的高密度和低密度位錯區，位錯線上和完整區碳濃度變化不大。
  8. The dislocation - free, low defects densities crystal are acquired, in which the impurities concentration is decreased, their distribution are uniform, and the gaas crystal has high uniform and purity characteristics

    利用m - lec法可以消除單晶中的位錯，降低缺陷密度，降低單晶中的雜質含量，並能使雜質在晶體中的分佈均勻，得到晶體均勻性、純凈度都高的gaas單晶。
  9. _ the phenomenon of saturation or " lock up " when all of the grains have transformed, is described in a rattier simple form through domain volume fractions by the proposed model, in which domain switching in ferro - electrics is analogous to that of dislocation movement on crystal slip planes in metals

    ? ?依據晶體塑性理論，將鐵電材料中的電疇翻轉類比于晶體位錯滑移面上的滑移系，定義鐵電材料中相應的電疇反轉系；採用電疇的體積分數表述電疇翻轉的變化量，得到了電疇翻轉的飽和特性的簡單描述。
  10. Computer simulation of self - organised dislocation structures during the cyclic deformation in a copper single crystal

    計算機模擬循環形變銅單晶體的自組織位錯結構
  11. In undoped lec si - gaas single crystal, the density of dislocation is usually very high and the dislocations easily form the cellular structure. the formation and distribution of other impurities and point defects are closely correlative with the cell structure and then result in the non - uniformity distribution of electrical and optical characteristic of gaas material

    而非摻lecsi - gaas中的高密度位錯，往往形成胞狀結構；其它雜質和點缺陷的形成與分佈與該結構密切相關，並導致gaas材料電學和光學特性的不均勻。
  12. Electronic structure of dege dislocation in single crystal nickel - base alloy

    單晶鎳基合金體刃位錯的電子結構
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