crystal field effects 中文意思是什麼
crystal field effects
解釋
晶體場效應-
( 1 ) effects of externally applied electric fields on photorefractive two - beam coupling are analyzed. theoretic dependence of the intensity gain factor on applied field e0 in sbn : 60 is presented. and the experimental results obtained in two sbn : 61 : cr crystal samples with different dopant concentration show clearly that for properly applied fields, a larger f can be achieved effectively than that obtained with no field applied
由兩塊不同摻cr濃度的sbn 61 cr晶體得到的實驗結果同時表明，適當的外電場作用能夠有效提高晶體的二波耦合增益，並且，外電場的作用使晶體的響應速度大大提高，而晶體的最佳耦合角與外電場之間沒有明顯的依賴關系。 -
Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system
該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。 -
The finite element method ( fe '. i ) is adopted to analyze the effects of the numbers of coil turns, current intensity and current frequency upon the rate of joule heat generation in details. the thermo - radiation analytical countermeasures of various types are adopted to carry out the numerical analysis of the effects of the crucible with different shapes and sizes and the blind holes with different depths opened in the tops of crucibles as well as coil positions upon the thermal field distribution whereby solving the main problem of field the thermo - field design of the induction - heating sic crystal growth system. a new combination idea of the thermo - field design obtained by means of the united design of the thermo - insulator and blind holes has been presented
採用有限元分析方法對線圈匝數、電流強度、電流頻率等對焦耳熱產生速率的影響進行了詳細的分析討論；採用不同的熱輻射分析策略，對不同坩堝形狀、坩堝頂部開設不同深度的盲孔以及線圈的位置等對熱場分佈的影響進行了數值分析，解決了感應加熱碳化硅晶體生長系統熱場設計的主要問題，提出了通過絕熱層與盲孔的聯合設計獲得所需熱場設計的思路，給出了根據軸向溫度梯度的波動對線圈位置實行動態調節以控制熱場的理論依據。 -
The effects of the higher - order terms on the self - deflection process of photorefractive bright solitons in a crystal are also investigated. compared the results of first - order diffusion term acting alone with both the first - order diffusion term and the higher - order space charge field terms acting together, the screening solitons always bend right, whereas for the self - deflection of the photovoltaic bright solitons and the screening - photovoltaic bright solitons both bending right or left is possible, and it is possible that no self - deflection process occurs
然後考慮到高階擴散項和高階電荷場對明孤子的影響，發現當外電場很強時，與只考慮一階擴散項作用的結果相比，屏蔽明孤子的偏轉量會增大，而光伏和屏蔽光伏明孤子的偏轉量有時會增大有時會減小，在一定條件下也會消失。
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