electron beam epitaxy 中文意思是什麼
electron beam epitaxy
解釋
電子束外延生長-
Based on laser molecular beam epitaxy, the strain behavior and the corresponding control technology in oxides heteroepitaxial system, especially in ferroelectric thin films with perovskite structure, was systematically studied by using in situ reflected - high - energy - electron - diffraction ( rheed ). some original and meaningful results were obtained. following aspects were included in this dissertation : the structure of thin films is analyzed by rheed
本論文基於激光分子束外延的基本原理，以高能電子反射為主要監測工具，對氧化物薄膜特別是鐵電氧化物薄膜異質外延過程中應變行為及其控制方法進行了系統的研究，並取得了一系列有意義的結果，主要包括以下內容:利用反射高能電子衍射（ rheed ）的信息對薄膜結構進行分析。 -
Molecular beam epitaxy ( mbe ) has been used to grow insb heteroepilayer on gaas ( 001 ) substrate with optimized low temperature buffer layer. the surface morphology and crystal quality of insb epilayers have been investigated by means of atomic force microscope ( afm ), scanning electron microscopy ( sem ) and double crystals x - ray diffraction ( dcxrd )
本文採用分子束外延（ mbe ）方法在gaas （ 001 ）襯底上優化低溫緩沖層生長條件制備了異質外延insb薄膜，採用原子力顯微鏡（ afm ） 、掃描電鏡（ sem ）與x射線雙晶衍射（ dcxrd ）等方法研究了insb / gaas薄膜的表面形貌與結晶質量。
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