electron configuration 中文意思是什麼

electron configuration 解釋
電子構型
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
  • configuration : n. 1. 結構；構造；圓形，外形。2. 組合，布置；配置。3. 地形；【天文學】（行星等的）相對位置，方位；【化學】（分子中原子的）組態，排列；【物理學】位形；組態。
  1. Using the multi - configuration dirac - fock method ( mcdf ), we studied the characteristic of the decay processes of the 4d core excited states of csiv, the low - lying excitation structure of super - heavy element bohrium ( z = 107 ) and the x - ray spectra of the 3d - 4f transitions of highly charged xenon ions in details in this work, by including the electron correlation and the relaxation effects systematically

    本論文運用mcdf方法，通過系統考慮電子相關效應和馳豫效應，分別研究了cs離子的4d內殼層激發態衰變動力學特性，超重元素bh （ z = 107 ）的低激發態結構以及高離化態氙離子的3d - 4f躍遷產生的x射線譜的結構等問題。
  2. A trend of photo - induced electron transition from p - type pc to n - type organic semiconductor was strongly supported by the data of sps and fisps measurements, the wire - like configuration of the tio2 tubule nanostructure benefited the electron - transport thereby improved the efficiency of the disassociation of the photogenerated carriers

    表面光電壓測試結果表明，復合材料中存在著強烈的從p -型酞菁材料到n -型氧化物半導體材料的光致電荷轉移。而且tio _ 2的納米管和線狀結構提高了電子的傳輸效率最為明顯，使光生電荷的分離得到顯著改善。
  3. The way electrons occupy the orbitals in an atom is called the electron configuration.

    在一個原子中，電子占據軌道的方式稱為該原子的電子構型。
  4. In this thesis, we have mainly studied the characteristics of chf3, c6h6 and cf4 electron cyclotron resonance ( ecr ) plasma using langmuir probe and optical emission spectroscopy ( oes ). the relative concentration of different radicals in chf3 plasma and the effect of chf3 / c6h6 ratio on bond configuration of a - c : f films were discussed. it was showed that h, f, c2 were the main radicals among radicals of h, f, c2, ch and f2 in chf3 ecr plasma

    重點研究了chf _ 3 、 cf _ 4和chf _ 3 c _ 6h _ 6放電等離子體中基團的分佈；分析了不同基團的相對密度隨宏觀放電條件（微波輸入功率、放電氣壓、源氣體流量比）的變化規律；探討了等離子體中各種基團的生成途徑；在不同源氣體流量比的條件下沉積了a - c ： f薄膜並通過傅立葉變化紅外吸收光譜（ ftir ）的測量得到了薄膜中鍵結構的信息；分析了a - c ： f薄膜的沉積速率及其鍵結構與等離子體空間基團分佈狀態之間的關聯。
  5. The energy level structures of the 4d core excited configuration 4d 5s25p5, final radiative configuration 4d105s25p4 and final auger configurations 4d105s25p3 and 4d105s15p4 of csv ion and all possible decay dynamics processes related to these configurations are all determined by mcdf method. we also compared the present results of radiative transition, oscillator strength and the line width with the results obtained by experimental spectra and the quasi - relativistic configuration interaction method and got a good agreement. we also make prediction for some dominant features of the auger electron spectrum emitted by the auger decay process of the 4d95s25p6 core excited states

    論文第三章中詳細的介紹了cs離子的4d內殼層電子激發組態4d ~ 95s ~ 25p ~ 5 、輻射末態4d ~ （ 10 ） 5s ~ 25p ~ 4及auger末態4d ~ （ 10 ） 5s ~ 25p ~ 3和4d ~ （ 10 ） 5s5p ~ 4的能級結構及各種可能的輻射和auger衰變過程，獲得了與已有的實驗結果和相關的半經驗準相對論組態相互作用計算結果相符的輻射躍遷能、振子強度以及線寬，預言了4d ~ 95s ~ 25p ~ 5態的以auger衰變為主的auger電子譜的特性。
  6. In this paper the formula, the technics, the dosage of the filler and the macromolecule coupling agent are studied which influence the technics condition, mechanical properties, structure configuration. also x - ray large angle diffraction, scan electron microscope, dta etc are used to analysis and test the properties of the pp / talc composites. conclusions as follows : 1

    本文系統地研究了復合體系配方、工藝方法、填料及偶聯劑用量對復合體系工藝條件、力學性能及結構形態的影響，同時利用廣角x射線衍射、掃描電鏡、 dta等對復合體系的性能進行了測試與分析，主要研究內容及結論如下： 1滑石粉的加入，雖然使pp的熔化時間增加，但是混煉能耗下降，有利於pp的加工；偶聯劑的加入，使pp的熔化時間增加，能耗略有降低，總體而言，對加工無不利影響。
  7. Design the configuration parameter of the electromagnets using magnetic circuit theory, and check the temperature increase of the electromagnet. and design a power device using igbt with electric and electron theory. it can supply the electromagnets excitation current which changes regularly on a given rule

    對于彎扭矩檢測系統，運用應變儀的原理，在試件上的合適位置加貼應變片並組成惠斯登全橋差動電路，檢測出實際加載在試件上的彎矩和扭矩的大小。
  8. The fourier transform infrared ( ftir ) spectrum is an effective technology for studying the hydrogen content ( ch ) and the silicon - hydrogen bonding configuration ( si - hn ) of hudrogenated amorphous silicon ( a - si : h ) films. in the paper, ch and si - hn of a - si : h films, fabricated at different ratio of h2 / sih4 by microwave electron cyclotron resonance plasma chemical vapor ( wmecr cvd ) method, have been obtained by analyzing their ftir spectra that are treated by baseline fitting and gaussian function fitting. the effects of ratio of h2 / sih4 on ch and si - hn are studied

    Fourier紅外透射（ ftir ）譜是研究氫化非晶硅（ a - si : h ）薄膜中氫含量（ c _ h ）及硅-氫鍵合模式（ si - h _ n ）最有效的手段，對于微波等離子體化學氣相沉積（ mwecrcvd ）方法在不同h _ 2 sih _ 4稀釋比下制備出的氫化非晶硅薄膜，我們通過紅外透射光譜的基線擬合、高斯擬合分析，得出了薄膜中的氫含量，硅氫鍵合方式及其組分，並分析了這些參數隨h _ 2 sih _ 4稀釋比變化的規律。
  9. But in the moderate electric field 150 kv / cm, there is a sharp change in the configuration and charge distribution of the exciton, i. e. the exciton is directly split into an electron polaron and a hole polaron. the polarization and dissociation happen at a same time, which differs from that in conjugated polymers. and in the strong electric field 350 kv / cm, appear structural phase transition of the chain and luminescence quenching

    同時得到兩個重要的臨界電場值： 1激子解離電場ec1 （ 150kv / cm ） ，在此電場下激子發生瞬間解離，成為電子型極化子和空穴型極化子； 2結構相變電場ec2 （ 350kv / cm ） ，在ec2下二聚化晶格開始被等距晶格取代， ptcl絡合物鏈發生結構相變，並伴隨peierls能隙漸趨消失和發光猝滅的現象出現。
  10. The aim of bepcii ( the beijing electron - positron collider ) will be an upgrading scheme from bepc. it uses mcu to be embeded in power supply. this thesis concerns system programs " development. it includes the configuration of bsp etc

    本設計涉及到vxworks下rs485底層驅動程序的開發和bsp的配置、單片機程序的開發以及板子的設計等等。
  11. In this method, an atomic state wave function ( asf ) is constructed by a linear combination of a series configuration state wave function ( csf ) in n - electron hilbert space

    在該方法中，原子態波函數（ asf ）可以用一組n電子mibert空間中的組態波函數（ csfs ）線性組合而構成。
  12. History of each element, atomic number, symbol, electron configuration, isotopes, its properties and its cost

    提供每個元素的基本信息、同位素、價值和歷史。
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