etching room 中文意思是什麼
etching room
解釋
浸蝕間-
The lowest threshold current 1. 8ma is achieved with continuous - wave at room temperature, the maximum output power is 7. 96mw. for the resesrch work on the fabrication procedures, we discusses selective oxidation and selective wet etching
利用濕法氧化和選擇性腐蝕相結合工藝研製出室溫連續工作的vcsel ，最低閾值電流為1 . 8ma ，輸出功率為7 . 96mw 。 -
The common method used by domestic and foreign scientists is removing the cobalt from the surface of the substrate by etching substrate using thin acid solution at room temperature. but the internal co will still overflow during mpcvd
為降低成核及成膜過程中鈷的副作用，國內外通常採用的方法是將硬質合金基體在室溫下用稀酸溶液浸泡一定時間，從而除去基體表面的鈷。
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