etching solution 中文意思是什麼
etching solution
解釋
浸蝕溶液-
The silicon plates are formed reverse four wimble array in koh solution by wet - etching technology. then the electrochemical etching experiments are done in three poles electrobath. and some technology questions such as heat oxygenation, light etching, wet etching and electrochemical etching have been analyzed. at the same time sample appearances are analyzed by scanning electron microscope. according to current burst model theory, the electrochemical deep holes etching mechanism are analyzed
在三極電解槽中，進行了電化學深刻蝕的探索性實驗。對氧化、光刻、濕法刻蝕和電化學刻蝕中的工藝問題進行了初步的理論和實驗研究，同時，採用sem對實驗樣品進行了形貌分析，並採用電流突破模型對電化學深孔刻蝕機理進行了理論分析。 -
Provide a whole set technology solution of " directly etching method of chemically forming veined and granular
表面化學紋理直接蝕刻的方法"技術服務 -
Theoretical analysis and experimental results show that the mentioned methods above can simplify the process condition, improve the etched effect, shorten the etching time and obtain more even etched surface. 2 ) laser - assisted wet sequencially - selective - etching method has been developed this method can be applied when the corrosion solution is mixed solvent
2 ）提出了激光化學誘導液相次序選擇腐蝕法該方法適用於腐蝕液為混合溶劑的情況，例如， h2so4 - h2o2對gaas基片進行腐蝕時，先採用h2o2對基片進行氧化腐蝕處理，再利用h2so4進行激光化學腐蝕。 -
In the beginning, the development history and the current development of the technique of fiber detection are introduced briefly. then, discussed in detail are strong coupling theory concerning the fbt coupler and the weak coupling theory concerning the hf acid etching and the side - polishing coupler. from the analysis of fiber coupling equations, the solution of the equation and the formula of the coupling coefficient are derived
本文首先概述了光纖竊聽技術的發展歷程和現狀，有針對性地分析了關于光纖竊聽技術中的光纖耦合問題，並詳細介紹了用於熔融拉錐耦合器的強耦合理論和用於氫氟酸腐蝕與邊研磨光纖耦合器的弱耦合理論;分析了耦合模方程，得出了耦合模方程的形式解，推導出耦合系數的計算公式。 -
Maintenance of alkaline etching solution in aluminium anodizing process
鋁陽極氧化堿蝕槽的維護 -
Process parameters related to the film quality are discussed ; relations are found between the etching rate and different process parameters when sio2 and cr thin films are etched in an inductively coupled plaslma ( icp ) etching equipment ; the tmah eroding solution ’ s ph value under different temperatures and concentrations are studied, since the etching process can be controlled by the ph value
3 .初步研究了利用pecvd淀積si3n4薄膜的工藝，討論了影響薄膜質量的相關工藝參數;初步研究了用icp刻蝕sio2和cr的相關工藝;通過分析不同濃度tmah腐蝕液在不同溫度下其ph值的變化，研究了以溶液ph值作為腐蝕溶液的控制參數。 -
The common method used by domestic and foreign scientists is removing the cobalt from the surface of the substrate by etching substrate using thin acid solution at room temperature. but the internal co will still overflow during mpcvd
為降低成核及成膜過程中鈷的副作用，國內外通常採用的方法是將硬質合金基體在室溫下用稀酸溶液浸泡一定時間，從而除去基體表面的鈷。 -
Hf - based solution is widely used for cleaning and wet etching sio2 in pre - diffusion clean process
摘要以氟化氫為基礎的溶液被廣泛地用在擴散前清洗工藝中的二氧化矽清洗與蝕刻中。 -
For the first time, an integrated waveguide turning mirror ( 1wtm ) in soi was put forward and realized. using anisotropic etching technology with koh solution, the mirror surface was very smooth with root square roughness only 5. 19nm, and the mirror was vertical to the wafer surface because of the crystalline relationship
論文首次設計並製作了soi上集成波導式轉彎微鏡（ iwtm ） ，利用硅的koh各向異性腐蝕特性製作出的微鏡表面非常光亮，均方根粗糙僅為5 . 19nm ，並且由於鏡面是腐蝕出的晶面，其與晶片表面非常垂直。
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