growth of the crystal 中文意思是什麼

growth of the crystal 解釋
晶體生長
  • growth : n. 1. 生長，成長，發育，發展。2. 栽培，培養。3. 生長物，產物；【醫學】瘤，贅生物。4. 【經濟學】（資本價值與收益的）預期增長。
  • of : OF ＝Old French 古法語。
  • the : 〈代表用法〉…那樣的東西，…那種東西。1 〈用單數普通名詞代表它的一類時（所謂代表的單數）〉 （a） 〈...
  • crystal : n 1 結晶，（結）晶體；晶粒；水晶（＝rock crystal）；石英。2 【無線電】晶體。3 結晶玻璃；雕玻璃；...
  1. Through the analyzing the macro - structure to micro - structure, the author considers that retarding mechanism of citric acid is that citric acid and ca in the gypsum form the complexant ion, and hinder the crystallization center of dihydrate crystal bigger ; that of sodium tripolyphosphate is that it combined with ca, hinders the dissolve of hemihydrate. formation and growth of crystallization center ; that of bone glue is the glue - protection and chemical absorption action of active group, which also retards the formation and growth of crystallization center

    通過宏觀到微觀的分析，筆者認為，檸檬酸的緩凝作用的原因主要在於檸檬酸與鈣形成絡合離子，影響了二水石膏晶體的晶核長大過程；多聚磷酸鈉與鈣形成某種復鹽，對于石膏晶體的溶解、成核和長大過程均有強烈的阻礙影響；骨膠則在於膠體對半水石膏的包裹和活性基團的化學吸附，使二水石膏晶體的成核和長大困難。
  2. Tera xtal s release of 4 - inch product is well timed to meet the higher market demand stemmed from the wide - adoption of cellular phones in the developed and developing countries. with guidance from prof. yu huang of national tsing hua university s crystal growth laboratory, the crystal growth team at tera xtal first gained invaluable experience over the past 8 months by using the garage - version of a crystal puller in countless test growth trials of 3 " lithium tantalate crystals

    透過清華大學材料科學中心單晶成長實驗室負責人黃瑜教授與日本、中國大陸兩地長晶專家的交流與指導；兆晶科技的長晶團隊採用自製的長晶實驗機臺，經過無數次三英寸鉭酸鋰拉晶試驗與設計改善，委由國外廠商改造制式量產機臺費時六個月為兆晶科技製作出第一臺四英寸單晶爐。
  3. The experimental results show that the cycle of the mother liquid increases the yield of the product, the seed crystal can improve long - diameter ratio remarkably, the proper additive reduces the speed of crystal growth and make size distribution homogenize. through appending different seed crystal and bivalent lead at one time, we may receive when the content of the seed crystal is 0. 075 % and pb2 + is 20 - 50ppm, the yield of the basic magnesium chloride whisker is high and crystal shape is good. the surface active agent can improve dispersion performance of the basic magnesium chloride whisker

    研究結果表明：母液循環可以提高堿式氯化鎂晶須的產率；添加晶種可明顯的改善晶形；合適的添加劑可以降低晶體生長速度並可提高晶須的粒徑分佈；而同時加入不同用量的晶種和pb ~ （ 2 + ） ，試驗結果表明晶種含量在0 . 075 ， pb ~ （ 2 + ）在20 50ppm時，晶須的產率高，晶形好；表面活性劑對產品的分散性能有所改進。
  4. The short time it took to produce its first 4 - inch ingot is not only a testimony to the competency of tera xtal s engineering team, but also represent a step forward towards change in the japanese and american domination of the crystal growth industry

    有別於半導體用的矽晶，鉭酸鋰屬于硬脆的氧化物材料，融點高達1650 ；長晶的生產難度相當高，其關鍵在於人才、技術與經驗的長期培養。
  5. Studies of the crystal structure of endostatin have shown a compact globular fold, with one face particularly rich in arginine residues acting as a heparin - binding epitope, this site was recently shown to be involved in the inhibition of induced angiogenesis. experimental studies show that recombinant endostatin specifically inhibits the proliferation of endothelial cells in a dosedependent fashion. recombinant endostatin from bacteria is largely insoluble, but still efficient in arresting tu mor growth after injection into mice. intermittent therapy with recombinant bacterially produced endostatin reduces several experimental tumors, including lewis lung carcinoma, to a dormant state. no sign of drug induced resistance has been reported and, in the original study, the treatment dormancy appeared to persist even when therapy was discontinued. sowe regard endostatin as a promising anti - tumor drug

    許多研究表明重組內皮抑素特異性抑制內皮細胞增殖，而且這種抑制作用呈劑量依賴性。細菌表達產物內皮抑素大部分以不溶形式存在，將這種混懸液注射治療老鼠仍可以抑制腫瘤生長。于小鼠皮下重復注射內皮抑素重組蛋白，幾乎完全抑制鼠lewis肺癌等多種腫瘤生長，並無耐藥性產生，即使中斷治療腫瘤也不再復發。
  6. According to the i - t curves of potential step, it was revealed that electrocrystallization of ni - w - b alloy on glassy carbon followed the mechanism of instantaneous nucleation and three dimensional growth with diffusion controlled. the crystal nucleus number on the surface of electrode raised by the increase of over potential

    根據電位階躍的i t曲線分析得知，在玻摘要碳電極上ni wb合金電結晶過程遵從擴散控制瞬時成核三維成長模式進行，且隨著過電位的增加，電極表面上晶核數增多。
  7. On the basis of the improvement on the crystal growth furnace, the new nlo crystal k2al2b2o7 ( kabo ) has been grown by the top - seeding flux method

    在對爐體改進的基礎上，用頂部籽晶法生長新型紫外非線性光學晶體k _ 2al _ 2b _ 2o _ 7 （ kabo ） 。
  8. Abstract : in view of the crystal structure, this paper repo rts thecharacter of single crystal growth of germanate and the properties as me dium of laser crystal. the study and progress in germanate crystals used as widel y tunable laser crystal, self - doubling - frequency crystal and highly efficient and low pumping threshold laser crystal are introduced

    文摘:從晶體結構上分析了鍺酸鹽的單晶生長和作為激光晶體基質的特點，並介紹了鍺酸鹽作為可調諧激光晶體，自倍頻晶體，高轉換效率和低泵浦閾值的激光晶體的研究及進展。
  9. In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators. firstly, we presented reseached and development of solar cells in china and foreign countries ; secondly, on the basis of fundamental priciples and theories, we discussed some factors of influcing conversion efficiency of solar cells, and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed, the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied, and some questions on epitaxy growth ( such as crystal qualities, interface stress, element interdiffusion, n - and p - type doping et all ) were solved ; after that, the cell fabrication process was described ; finally, we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma, designed and fixed new solar concentrators

    本文致力於用自製的低壓mocvd裝置進行cainp _ 2 / gaas / ge空間用高效級聯太陽能電池製作的工藝以及聚光太陽能電池組件的研究。首先，介紹了國內外太陽能電池的研究現狀及應用情況；其次，運用太陽能電池基本原理討論影響電池轉換效率的因素，分析了級聯電池的伏安特性；隨后，討論了cainp _ 2 / gaas / ge雙結級聯電池的結構設計理念，研究了採用低壓mocvd技術生長cainp _ 2 / gaas / ge級聯太陽電池材料的工藝過程，解決了異質材料生長的結晶質量、界面應力、材料互擴散以及材料n 、 p型摻雜等一系列問題；然後總結了級聯電池的后工藝製作；最後，研究了以pmma為材料的菲涅耳線聚焦透鏡的熱壓成型工藝及其模具的加工工藝，設計並安裝完成新型聚光太陽能電池組件。
  10. The microtube zno econtrollable growth on the glass substrate, which was previously deposited, of zno hollow spheres was researched. the results showed that zno hollow spheres acted as crystal nucleus of zno microtubes. by this method regular zno microtubes were synthesised. the growth of microtubes can be controlled by change the size of zno hollow spheres

    結果發現zno中空球層對zno微米管的生長起到了晶核的作用，能夠在玻璃襯底上形成形貌規則的zno微米管;改變zno中空球的粒徑能夠改變所形成的zno微米管的尺寸，從而實現了對zno微米管的可控生長。
  11. Several flux systems have been studied, especially about the mixed flux system. we found that the use of mixed systems such as k2co3 - b2o3 - naf had greatly decreased the viscosity of the melt, decreased the saturation point and improved the growth quality of the crystal. the flux system naf - b2o3 is favour of decreasing the volatilization and the saturation point of the melt

    對kabo晶體的幾種助溶劑體系尤其對復合助溶劑體系進行了研究，我們發現復合助溶劑體系如： k _ 2co _ 3 - b _ 2o _ 3 - naf有利於減小熔體粘度，降低飽和點溫度，改善晶體的生長性能； naf - b _ 2o _ 3體系有利於降低熔體揮發性和飽和點溫度。
  12. We have found the best ways to optimize the growth of quality zno films and got highly c - axis oriented zno films. the microstructures of the films were observed by afm. after analyzing the crystal structures, the crystal tropism and the surface conformation flatness, we found the result that the substrate temperature of 400 ? is ideal for silicon substrates, which conforms to the result of the structure analyse. by analyzing the magnetism of zno films, we found that the films appropriately doped with fe, co ions have magnetism at room temperature and their magnetism can be improved by doping other little cu ion, but it is not certain that the content of cu is higher, the film has more magnetism, so it has the best content of cu. moreover, the films which have best crystal structures may not have the best magnetism

    我們採用原子力顯微鏡（ afm ）方法觀察薄膜的顯微結構，利用所得的圖象信息對薄膜的晶粒結構、晶粒取向、表面形態平整度等進行分析討論，認為400的襯底溫度對硅襯底薄膜是合適的，與結構分析的結果一致。通過對薄膜磁性能的分析和研究，我們得出一些有意義的結果：適量過渡金屬離子fe 、 co摻雜的zno薄膜，在室溫下具有鐵磁性，而在此基礎上摻入少量的cu離子能改善薄膜的磁性。摻cu量有個最佳值，而且結構最好的薄膜磁性不一定最好。
  13. Abstract : while we were analyzing the proposed theory about the crystal growth, we doubted that the interface phase existed in the process of crystal growth. with this, we had looked for a lot of references connected and analyzed them. we find that the interface - phase does exist in the process of crystal growth and takes a critic role. therefore, we divide the interface - phase into three co - relative parts : interface layer, adsorptive layer and transitive layer. base on the above ideal, we demonstrate the role of interface layer, adsorptive layer and transitive layer in the process of crystal growth respectively. furthermore, we proposal the interface - phase model about the crystal growth

    文摘:在分析前人的晶體生長理論時，作者認為晶體生長過程中可能存在界面相；在分析各種晶體生長現象后認為，晶體生長過程中界面相是存在的，並起著十分重要的作用；通過分析研究，將晶體生長過程中的界面相劃分為3個有機的組成部分：界面層、吸附層和過渡層；並進一步論述了界面層、吸附層和過渡層在晶體生長過程中的地位與作用；在此基礎上提出了界面相模型。
  14. Abstract : the affects of crystal absorption for heat radiation on crystal growth, which include : the heat loss of the hot grower, the chara - cteristic of temperature - time of crystal growth, the pattern of fluid flow and the shape of interface, the interface inversion of crystal, the temperature distribution and the thermal stress distribution, are reviewed in this paper

    文摘:本文綜述了晶體對熔體熱輻射吸收對晶體生長的影響，包括對熱腔熱耗散的影響；對晶體生長溫度時間特性的影響；對液流形態和固液界面形狀的影響；對晶體界面反轉的影響；對晶體中溫度分佈和應力分佈的影響。
  15. With the development of the growth skill craft of gaas single crystal, the density of el2 can be controlled in 1 - 5 1016 / cm ~ 3 and its distribution becomes more uniform in gaas wafer too, so the distribution of carbon seems to be more important to determine the uniformity of electrical resistivity of si - gaas material. so it seems to be very important to study the distribution of carbon and the effect of dislocation on the distribution of carbon

    隨著單晶生長技術的發展，通過退火，由於si - gaas中理論化學配比偏離， el2濃度可被控制在1 1 . 5 10 ~ （ 16 ） cm ~ （ - 3 ） ，且分佈均勻。因此碳的分佈就成為決定si - gaas材料電阻率均勻性的一個關鍵因素。所以，研究碳微區均勻性就顯得非常重要。
  16. The influence of nano - al2o3 on the sintering and the properties of the si3n4 ceramics was researched in this paper. the samples with different amount of nano - al2o3 were obtained by using pressureless sintering at 1600, 1650, 1700 in the nitrogen atmosphere. the microstructure and the composition of the ceramics were determined by the means of x - ray, sem, micro - hardness meter etc. it is show that the sisty ceramics can be densified at 1650c to % percent of the theory density through the addition of nano - al2o3 ( the value could be 90 percent by other technique ). the crystalline growth of the cylindrical - si3n4 and the ratio of its longitude to its diameter are increased with the addition of nano - al2o3. a uniform microstructure and an fined crystal as well as more sialon phases can be obtained in the si3n4 ceramics through the addition of that

    實驗結果表明：在碳管爐中、氮氣保護下進行燒結，添加劑為納米al _ 2o _ 3粉末時，由於納米粉末的高活性、高燒結驅動力，在1650就可使si _ 3n _ 4完全地燒結，並使其緻密度可達理論密度的96以上（比其它工藝高6左右） ；同時，納米al _ 2o _ 3地加入大大促進了長柱狀? si _ 3n _ 4的生長和發育及柱狀晶長徑比的提高，使微觀結構均勻、細化，形成了更多力學性能優異的固體? sialon相，減少了不利於陶瓷材料性能的晶間玻璃相，凈化了晶界。
  17. The liquid - phase synthetic method was improved to obtain the sedimentation of yvo4, which makes the procedure more convenient and the sedimentation more compact. based on the syntheses of the raw materials, the czochralski method was used to grow the crystal from different charges. by comparing with the spectrum in the ultra - violet region of the yvo4 crystals grown in the same condition, the result was reached that the presence of the 1552 absorption peak is independent of the direction of the crystal growth and the annealing, but is related to the impurity of the charges

    採用多種方法合成了用於晶體生長的yvo _ 4原料，改進了液相合成法中獲得yvo _ 4沉澱的方法，使得該方法更為簡便，獲得的沉澱更加緻密；在原料合成的基礎上，採用提拉法對來源不同的生長原料進行了生長，並通過對在相同氣氛下生長的晶體的紫外透過譜線的對比，指出了該吸收峰的存在與晶體生長方向及有無退火無關，進而提出該吸收峰的存在與合成原料中有無雜質有關。
  18. Abstract : the crystal structures obtained by static solidification and vibration solidification were compared. it was showed that, in the case of vibration solidification, the orientation growth of the columnar crystal was not obvious, the equiaxial crystal appeared more early. the grains of both types of crystals were quite fine, hardness in the full section was relatively high, and the hardness distribution was uniform. in the former case, the solute segregation in dendritical austenite more severe, and there were lumps of distortion inclusion

    文摘:對球鐵金屬型靜凝固與振動凝固的結晶組織對比表明：後者柱狀晶方向性生長較弱，等軸晶出現較早，且兩者的晶粒均較細，全斷面硬度較高且分佈均勻；前者枝晶奧氏體內溶質偏析大，有畸變夾雜團塊。
  19. The intelligent control of the crystal growth is implemented in the process control level with higher control accuracy and the dynamic data display, automatic event alarm, log printout, on - line information look up and security limit detection are iraplemented in the control nangement level

    過程式控制制級實現了晶體生長的智能控制，控溫精度較高；控制管理級實現了數據動態顯示、事故自動報警、定時報表列印、在線信息查詢和安全權限檢查等功能。
  20. R. a. laudise, the growth of single crystal, prentice - hall, inc. p. 41

    藍崇文、姜智豪，結晶成長概述-塊晶生長」 ，第46卷，第二期，化工（ 1999 ）
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