impurity ionization 中文意思是什麼
impurity ionization
解釋
雜質電離- impurity : n. 〈常用 pl. 〉1. 不純，不潔。2. 下流，不道德，不貞節，雜質。
- ionization : n 【物理學】電離（作用）；離子化。 ionization by impact [light] 碰撞[光感]電離。 ionization const...
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In this paper, the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials. the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers
本文就sio _ 2 / sic界面質量對n溝sicmosfet性能的影響做了深入的研究：從碳化硅材料的晶體結構出發分析了碳化硅材料中雜質的不完全離化，採用sicmos反型層薄層電荷數值模型，研究了雜質不完全離化對p型6h - sicmosc - v特性的影響。 -
Therefore, either reinforcing the pre - ionization or eliminating the harmful impurity is propitious to increasing the effective excitation of the laser media in the resonator so as to increase the output power
因此增強預電離和消除有害雜質均有利於提高腔內激光介質的有效激發進而提高激光器輸出功率。 -
The present thesis is devoted to improving the excitation of the laser media ( gas mixture ) in the resonator of the high - average - power tea co2 laser by means of reinforcing the pre - ionization and eliminating the harmful impurity
本文正是從提高預電離及清除混合氣中的雜質這兩個方面研究改善高平均功率teaco _ 2激光器腔內介質（混合氣體）的激發性能的。 -
Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation
研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。 -
The influence of incomplete ionization of impurity in 6h - sic on mosfet electrical characteristics is investigated considering the frenkel - pool effect, which can enhance the impurity ionization by lowing the effective barrier height
把frenkel - pool效應引入了對sicmos表面空間電荷區雜質不完全離化的分析，並建立起了在電場作用下sic雜質離化的新的模型。
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